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Composite material, method of producing the same, and apparatus for producing the same

外国特許コード F150008501
整理番号 N072-17US1
掲載日 2015年11月5日
出願国 アメリカ合衆国
出願番号 201313875198
公報番号 20130323926
公報番号 9252020
出願日 平成25年5月1日(2013.5.1)
公報発行日 平成25年12月5日(2013.12.5)
公報発行日 平成28年2月2日(2016.2.2)
国際出願番号 JP2009053877
国際公開番号 WO2009110431
国際出願日 平成21年3月2日(2009.3.2)
国際公開日 平成21年9月11日(2009.9.11)
優先権データ
  • 特願2008-057865 (2008.3.7) JP
  • 特願2008-211238 (2008.8.19) JP
  • 12/921,348 (2010.12.9) US
  • 2009JP053877 (2009.3.2) WO
発明の名称 (英語) Composite material, method of producing the same, and apparatus for producing the same
発明の概要(英語) Proposed are a composite material having a high adhesiveness, wherein non-penetrating pores that are formed in a silicone surface layer are filled up with a metal or the like without leaving any voids by using the plating technique and the silicone surface layer is coated with the metal or the like, and a method of producing the composite material.
A composite material, which has a high adhesiveness between a second metal or an alloy of the second metal (106a, 106b) and a silicone surface, can be obtained by filling up non-penetrating pores that are formed in the surface of a silicone substrate (100) substantially with a second metal or an alloy of the second metal (106a) with the use of the autocatalytic electroless plating technique wherein a first metal located at the bottom of the non-penetrating pores as described above serves as the starting point, and coating the surface of the silicone substrate (100) with the second metal (106b).
従来技術、競合技術の概要(英語) BACKGROUND ART
There have been conventionally studied surface treatment methods such as metal coating, nonmetal coating, and chemical conversion coating.
So far, various functional composite materials have been created using a matrix of a metal provided on a surface thereof with a film of another metal.
Plating is one of typical examples of the several surface treatment methods.
This plating technique is widely utilized in various industries.
However, such a film of a metal or the like to be formed by plating as described above is not sufficiently adhesive to the matrix unless the matrix is appropriately selected.
For example, silicon, which is most widely used in the fields of semiconductor, MEMS, and the like, is one of the matrices to be provided with a metal film by plating.
However, as having been pointed out, silicon generally has poor adhesion with a plated metal (Patent Document 1, for example).
As one of techniques for improving adhesion of a metal film to silicon, there is disclosed a method of immersing a surface of polycrystalline silicon in a heated aqueous solution of sodium hydroxide (NaOH) to provide unevenness in order to improve adhesion of the surface with a plated metal film (see Patent Document 2).
Also disclosed is a technique of forming a porous layer with use of a special substrate and filling pores in the porous layer with a plating material by displacement plating (Patent Document 3).
Non-Patent Document 1: K. Ito and one other, "Nanohole Patterned Media", Journal FUJITSU, Fujitsu Limited, January 2007, Vol. 58, No. 1, pp. 90-98
Non-Patent Document 2: S. Yae and four others, "Electrochemistry Communications", August 2003, Vol. 5, p. 632
Non-Patent Document 3: K. Tsujino and one other, "Electrochemica Acta", Nov. 20, 2007, Vol. 53, p. 28
Patent Document 1: Japanese Unexamined Patent Publication No. 2004-193337
Patent Document 2: Japanese Unexamined Patent Publication No. S60-4271
Patent Document 3: Japanese Unexamined Patent Publication No. 2006-342402
Patent Document 4: Japanese Unexamined Patent Publication No. S57-105826
Patent Document 5: Japanese Unexamined Patent Publication No. H11-283829
Patent Document 6: Japanese Unexamined Patent Publication No. 2003-288712
Patent Document 7: Japanese Unexamined Patent Publication No. 2004-237429
Patent Document 8: Japanese Unexamined Patent Publication No. 2005-139376
Patent Document 9: Japanese Unexamined Patent Publication No. 2007-533983
Patent Document 10: United States Unexamined Patent Publication No. 2005/0101153

特許請求の範囲(英語) [claim1]
1. A method of producing a composite material, the method comprising: a dispersion/allocation step comprising dispersing and allocating on a silicon surface a first metal into shapes of particles, islands, or films;
a non-penetrating pore formation step comprising forming non-penetrating pores in the silicon surface by immersing the silicon surface in a second solution comprising fluoride ions, thereby forming non-penetrating pores comprising the first metal at the bottoms thereof; and
a plating step comprising substantially filling the remaining volume of the non-penetrating pores with a second metal or an alloy thereof by autocatalytic electroless plating, the plating step comprising immersing the silicon surface in a third solution comprising ions of the second metal and a reducing agent, thereby substantially filling the remaining volume of the non-penetrating pores with the second metal, or alloy thereof, and forming a film of the second metal, or alloy thereof, on portions of the silicon surface outside the pores such that the second metal or alloy thereof is adhered to the silicon surface with an adhesiveness such that the second metal, or alloy thereof, cannot be detached from the silicon surface when tested according to Japanese Industrial Standard test H8504, wherein the first metal located at bottoms of the non-penetrating pores serves as starting points for the autocatalytic electroless plating.
[claim2]
2. A method of producing a composite material, the method comprising: a dispersion/allocation step comprising dispersing and allocating on a silicon surface a first metal into shapes of particles, islands, or films by immersing the silicon surface in a first solution comprising ions of the first metal and fluoride ions;
a non-penetrating pore formation step comprising forming non-penetrating pores in the silicon surface by immersing the silicon surface in a second solution comprising fluoride ions, thereby forming non-penetrating pores comprising the first metal at the bottoms thereof; and
a plating step comprising substantially filling up the remaining volume of the non-penetrating pores with a second metal or alloy thereof by autocatalytic electroless plating, the plating step comprising immersing the silicon surface in a third solution comprising ions of the second metal and a reducing agent, thereby substantially filling the remaining volume of the non-penetrating pores with the second metal, or alloy thereof, and forming a film of the second metal, or alloy thereof, on portions of the silicon surface outside the pores such that the second metal, or alloy thereof, is adhered to the silicon surface with an adhesiveness such that the second metal or alloy thereof cannot be detached from the silicon surface when tested according to Japanese Industrial Standard test H8504, wherein the first metal located at bottoms of the non-penetrating pores serves as starting points for the autocatalytic electroless plating.
[claim3]
3. The method of claim 1, wherein the silicon surface is porous by provision of the non-penetrating pores.
[claim4]
4. The method of claim 1, wherein the first metal comprises at least one metal selected from palladium (Pd), silver (Ag), gold (Au), platinum (Pt), and rhodium (Rh).
[claim5]
5. The method of claim 1, wherein the silicon comprises at least one material selected from single-crystalline silicon, polycrystalline silicon, microcrystalline silicon, and amorphous silicon.
[claim6]
6. The method of claim 2, wherein the silicon surface is porous by provision of the non-penetrating pores.
[claim7]
7. The method of claim 2, wherein the first metal comprises at least one metal selected from palladium (Pd), silver (Ag), gold (Au), platinum (Pt), and rhodium (Rh).
[claim8]
8. The method of claim 2, wherein the silicon comprises at least one material selected from single-crystalline silicon, polycrystalline silicon, microcrystalline silicon, and amorphous silicon.
  • 発明者/出願人(英語)
  • YAE SHINJI
  • HIRANO TATSUYA
  • MATSUDA HITOSHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 438/678
参考情報 (研究プロジェクト等) CREST エネルギーの高度利用に向けたナノ構造材料・システムの創製 領域
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