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Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated

外国特許コード F150008516
整理番号 AF15-08TW
掲載日 2015年11月19日
出願国 台湾
出願番号 103136023
公報番号 201528384
公報番号 I591731
出願日 平成26年10月17日(2014.10.17)
公報発行日 平成27年7月16日(2015.7.16)
公報発行日 平成29年7月11日(2017.7.11)
優先権データ
  • 特願2013-227559 (2013.10.31) JP
発明の名称 (英語) Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated
発明の概要(英語) (TWI591731)
A semiconductor-substrate manufacturing method that includes a step in which a germanium layer having an oxygen concentration of at least 1x1016 cm-3 is heat-treated at a temperature of at least 700 DEG C in a reductive gas atmosphere.
Also, a semiconductor-substrate manufacturing method that includes a step in which a germanium layer having an oxygen concentration of at least 1x1016 cm-3 is heat-treated in a reductive gas atmosphere such that said oxygen concentration decreases.
特許請求の範囲(英語) [claim1]
1.1 semiconductor foundation plates, its characteristic lies in contains to have the following step: In the reducible gas environment, will have 1×10 oxygen concentration of 16 cm over -3 germanium level to carry on the heat treatment over 700℃.
Manufacture of method 2.1 semiconductor foundation plates, its characteristic lies in contains to have the following step: In the reducible gas environment, will have 1×10 oxygen concentration of 16 cm over -3 germanium level to carry on the heat treatment, to reduce the above oxygen concentration.
[claim2]
3. Like manufacture of method request item of 1 semiconductor foundation plate, above carries on the heat treatment step to carry on heat treatment over 800℃ the step.
[claim3]
4. Like request item 1 to manufacture of method threes any item of semiconductor foundation plate, the oxygen concentration that the above germanium level has will become because of the above heat treatment will be lower than 1×10 16 cm -3.
[claim4]
5. Like request item 1 to manufacture of method fours any item of semiconductor foundation plate, above germanium level's (111) is the main surface.
[claim5]
6. Like request item 1 to manufacture of method five any item of semiconductor foundation plate, the above reducible gas environment is the hydrogen environment.
[claim6]
7. Like request item 1 to manufacture of method six any item of semiconductor foundation plate, the above germanium level is the unit crystal germanium foundation plate.
[claim7]
8. Manufacture of method 8.1 semiconductor devices, its characteristic lies in contains to have the following step: In 1 to the manufacture of method seven any item of semiconductor foundation plate generates the semiconductor foundation plate to form the semiconductor device because of like the request item.
[claim8]
9. Like manufacture of method request 8 semiconductor devices, above forms semiconductor device the step to contain to have: Forms floodgate extremely insulation membrane in already the above heat treatment's above germanium level surface the step; And forms the step of floodgate extremely electrode on the above floodgate insulation membrane extremely.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • TORIUMI AKIRA
  • LEE CHOONG-HYUN
  • NISHIMURA TOMONORI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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