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Self-spin polarization transistor device

外国特許コード F150008530
整理番号 K03510TW
掲載日 2015年11月19日
出願国 台湾
出願番号 102128785
公報番号 201413965
公報番号 I581434
出願日 平成25年8月12日(2013.8.12)
公報発行日 平成26年4月1日(2014.4.1)
公報発行日 平成29年5月1日(2017.5.1)
優先権データ
  • 特願2012-179763 (2012.8.14) JP
発明の名称 (英語) Self-spin polarization transistor device
発明の概要(英語) (TWI581434)
The present invention includes: a source part formed by a ferromagnetic substance magnetized in a first direction; a drain part separately arranged with the source part side by side and formed by a ferromagnetic substance magnetized in a first direction; a channel part configured between the source part and the drain part and connected to the source part and the drain part directly or through a tunneling layer; and a circular polarized illumination part for emitting the circular polarized light of self-spin orientation used for controlling the channel part toward the channel part.
In addition, the channel part is made of semiconductor material, and the circular polarized illumination part emits the circular polarized light with a wavelength having energy higher than the energy band gap of the channel part.
特許請求の範囲(英語) [claim1]
1. Kinds of spinning polarization transistor parts, have: Source pole piece, because the ferromagnetic substance of 1st direction magnetization constitutes;
Draws the pole piece, with above source part lift-off compound establishment because, and ferromagnetic substance of above 1st direction magnetization constitutes;
The channel department, disposes between the above source pole piece and above draws the pole pieces, and direct or and above draws the pole piece in the above source pole piece by way of the scanning level joint;
And rotatory polarization illumination department, will be used to control above channel department's the rotatory polarization of spinning orientation toward the above channel department illumination.
[claim2]
2. According to claim 1, item of spinning polarization transistor part, above channel department by semiconducting material formation, and above rotatory polarization illumination department will have is equal to the above channel department can above the band gap energy energy the rotatory polarization of wave length toward the above channel department illumination.
[claim3]
3. According to claim 2, item of spinning polarization transistor part, the above channel department is formed by gallium arsenic (GaAs).
[claim4]
4. According to claim 1, to 3 items of any item of spinning polarization transistor parts, above rotatory polarization illumination department rotatory polarization toward along the direction illumination of above 1st direction.
[claim5]
5. According to claim 4, item of spinning polarization transistor part, its has the foundation plate, the above source pole piece and above draws the pole piece to form on the above foundation plate, the above 1st direction to be vertical in foundation plate's direction, and above rotatory polarization illumination department rotatory polarization toward along the direction illumination of above 1st direction.
[claim6]
6. Like the application patent scope the 1st to 3 items of any item of spinning polarization transistor parts, its has the foundation plate, the above source pole piece and above draws the pole piece to form on the above foundation plate, the above 1st direction in direction for foundation plate surface, and above rotatory polarization illumination department takes the rotatory polarization facing above channel department the entry of angle of rotatory polarization as to be smaller than 90 degrees way illuminations.
[claim7]
7. According to claim 1, to 6 items of any item of spinning polarization transistor parts, the above channel department has the two-dimensional electronic gas blanket.
[claim8]
8. According to claim 1, to 7 items of any item of spinning polarization transistor parts, the above source pole piece and above draws pole piece's thickness is to surmount above rotatory polarization the thickness of entry length.
[claim9]
9. According to claim 8, item of spinning polarization transistor part, the above source pole piece and above draws pole piece's thickness thick also in the thickness of above channel department.
[claim10]
10. 1 kinds of spinning polarization transistor parts, have: The 1st source pole piece, because the ferromagnetic substance of 1st direction magnetization constitutes;
1st draws the pole piece, with the above 1st source part lift-off compound establishment because, and ferromagnetic substance of above 1st direction magnetization constitutes;
The 1st channel department, disposes between the above 1st source pole piece and above 1st draws the pole pieces, and direct or and above 1st draws the pole piece in the above 1st source pole piece by way of the scanning level joint;
The 2nd source pole piece, because the ferromagnetic substance of 2nd direction magnetization constitutes;
2nd draws the pole piece, with the above 2nd source part lift-off compound establishment because, and ferromagnetic substance of above 2nd direction magnetization constitutes;
The 2nd channel department, disposes between the above 2nd source pole piece and above 2nd draws the pole pieces, and direct or and above 2nd draws the pole piece in the above 2nd source pole piece by way of the scanning level joint;
And rotatory polarization illumination department, will be used to control the above 1st channel department and above 2nd channel department's the rotatory polarization of spinning orientation toward the above 1st channel department and above 2nd channel department illumination.
[claim11]
11. According to claim 10, item of spinning polarization transistor part, its has: The 1st rotatory polarization illumination department, to control in the material of constitution above 1st channel department spinning shines the rotatory polarization;
And the 2nd rotatory polarization illumination department, to control in the material of constitution above 2nd channel department spinning shines the rotatory polarization.
[claim12]
12. According to claim 10, or the 11 items of spinning polarization transistor parts, the above 1st source pole piece and above 2nd source pole piece as well as above 1st draws the pole piece and above 2nd draws pole piece's thickness is to surmount above rotatory polarization the thickness of entry length.
[claim13]
13. According to claim 12, item of spinning polarization transistor part, the above 1st source pole piece and above 1st draws pole piece's thickness is thick in the thickness of above 1st channel department, the above 2nd source pole piece and above 2nd draws pole piece's thickness is thick in the thickness of above 2nd channel department.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF YORK
  • 発明者(英語)
  • HIROHATA ATSUFUMI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) PRESTO Nanosystem and function emergence AREA
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