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HETEROJUNCTION SOLAR CELL AND PROCESS FOR PRODUCING SAME

外国特許コード F150008611
整理番号 (S2014-0689-N0)
掲載日 2015年12月16日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2015JP055772
国際公開番号 WO 2015137152
国際出願日 平成27年2月27日(2015.2.27)
国際公開日 平成27年9月17日(2015.9.17)
優先権データ
  • 特願2014-051160 (2014.3.14) JP
発明の名称 (英語) HETEROJUNCTION SOLAR CELL AND PROCESS FOR PRODUCING SAME
発明の概要(英語) [Problem] To provide a heterojunction solar cell of a structure in which carrier recombination on the upper surface of the crystalline silicon can be dramatically inhibited and which attains a heightened efficiency. [Solution] This heterojunction solar cell is a solar cell in which a thin film of intrinsic amorphous silicon has been bonded by heterojunction to a crystalline silicon substrate, wherein the crystalline silicon substrate has a doped layer formed by doping an extreme surface layer having a depth of 10 nanometers or less with phosphorus or boron. According to an electron photomicrograph obtained when a sample (900) was examined with a transmission electron microscope, the sample (900) having been produced by depositing a film of intrinsic amorphous silicon (902) right on an n-type crystal silicon substrate (901) by a catalytic-CVD method, the thickness of an interface transition layer (903) between the n-type crystal silicon (901) and the amorphous silicon (902) is 0.6 nanometers or less.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
  • 発明者(英語)
  • MATSUMURA HIDEKI
  • OHDAIRA KEISUKE
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN TD TG
※ 上記の特許・技術に関心のある方は、下記問合せ先にご相談下さい。

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