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METHOD FOR PRODUCING LIGHT INCIDENT-SIDE ELECTRODE OF DYE-SENSITIZED PHOTOELECTRIC CONVERSION ELEMENT

外国特許コード F160008791
整理番号 (S2015-0004-N0)
掲載日 2016年8月4日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2015JP077460
国際公開番号 WO 2016052482
国際出願日 平成27年9月29日(2015.9.29)
国際公開日 平成28年4月7日(2016.4.7)
優先権データ
  • 特願2014-203872 (2014.10.2) JP
発明の名称 (英語) METHOD FOR PRODUCING LIGHT INCIDENT-SIDE ELECTRODE OF DYE-SENSITIZED PHOTOELECTRIC CONVERSION ELEMENT
発明の概要(英語) A pair of electrodes, one of which is composed of a light-transmitting conductive substrate, are set in a colloid of first semiconductor fine particles having a predetermined average particle diameter and electrophoresis is performed using the light-transmitting conductive substrate as the negative electrode, thereby having the first semiconductor fine particles laminated on a transparent conductive film of the light-transmitting conductive substrate. A pair of electrodes, one of which is composed of the light-transmitting conductive substrate having the first semiconductor fine particles laminated thereon, are set in a colloid of second semiconductor fine particles having a larger average particle diameter than the first semiconductor fine particles and electrophoresis is performed using the light-transmitting conductive substrate as the positive electrode, thereby having the second semiconductor fine particles laminated on the first semiconductor fine particle layer of the light-transmitting conductive substrate. After subjecting the thus-obtained light-transmitting conductive substrate to a heat treatment, the light-transmitting conductive substrate is immersed in a solution, into which a dye is dissolved, so that the dye is adsorbed only on the first semiconductor fine particle layer of the light-transmitting conductive substrate.
特許請求の範囲(英語) [claim1]
1.  A method of manufacturing a light incident side electrode of a dye-sensitized photoelectric conversion element, (1) in a container, forming a first colloid by mixing a first semiconductor microparticles group having a predetermined average particle size in a dispersion medium, (2) to the first in the colloid, the translucent conductive substrate inserts a pair of electrodes constituting one electrode, between the pair of electrodes, the current to the transparent conductive substrate becomes cathode a step subjected to electrophoresis, laminating the first semiconductor fine particles on the transparent conductive film of the transparent conductive substrate by flowing, (3) in a container, forming a second colloid by mixing a second semiconductor fine particle group having a mean particle size greater than the average particle diameter of the first semiconductor microparticles groups in the dispersion medium, (4) to said second colloid, insert a pair of electrodes, wherein the light transmitting conductive substrate obtained forms one electrode in the step (2), between the pair of electrodes, the transparent conductive a step where the substrate subjected to electrophoresis by applying a current so that the anode, laminating the second semiconductor fine particles on the first semiconductor fine particle layer of the transparent conductive substrate, (5) a step of annealing the translucent conductive substrate obtained in step (4), (6) was dissolved dye in the dispersion medium in a container, in this solution, by immersing the transparent conductive substrate after the heat treatment, the first semiconductor fine particle layer of the transparent conductive substrate a step of adsorbing the dye only, (7) the production process is characterized a step of drying the transparent conductive substrate thus obtained, that contain at step (6).
[2]
[claim2]
2.  A method of manufacturing a light incident side electrode of a dye-sensitized photoelectric conversion element, (1) in a container, the first and the semiconductor particles, the second semiconductor particles a dispersion medium having an average particle size larger than the average particle diameter of the first semiconductor particles having a predetermined average particle size forming a colloid by mixing in, (2) in said colloid, the translucent conductive substrate inserts a pair of electrodes constituting one electrode, between the pair of electrodes, the transparent conductive substrate by applying a current so that the cathodic electrocoat a step performed electrophoresis, laminating the first semiconductor fine particles on the transparent conductive film of the transparent conductive substrate, (3) between the pair of electrodes, wherein subjected to electrophoresis translucent conductive substrate by applying a current so that the anode and the second on the first semiconductor fine particle layer of the transparent conductive substrate a step of laminating a semiconductor fine particles, (4) a step of annealing the translucent conductive substrate obtained in step (3), (5) dissolving the dye in the dispersion medium in a container, in this solution, by immersing the transparent conductive substrate after the heat treatment, the first semiconductor fine particle layer of the transparent conductive substrate only a step of adsorbing the dye, (6) the production method which comprises the steps of drying the transparent conductive substrate thus obtained, that it contains at Step (5).
[3]
[claim3]
3.  The method according to claim 1 or claim 2, wherein an average particle diameter of said second semiconductor fine particle group is 5 to 40 times the average particle diameter of said first semiconductor fine particle group.
[4]
[claim4]
4.  The average particle diameter of the first semiconductor fine particle group is the 5 ~ 20nm, The method according to claim 3, average particle diameter of said second semiconductor fine particle group characterized in that it is a 100 ~ 200nm.
[5]
[claim5]
5.  The dispersion medium, The method according to any one of claims 1 to 4, characterized in that the alcohol or water.
[6]
[claim6]
6.  The semiconductor fine particles, method according to any one of claims 1 to 5, which is a fine particulate or zinc oxide fine particles or aluminum oxide of the titanium oxide.
[7]
[claim7]
7.  A light incident side electrode of claims 1 to dye-sensitized photoelectric conversion element manufactured by the method according to any one of claims 6,  And the transparent conductive substrate,  With said first semiconductor fine particle layer formed on the transparent conductive film of the transparent conductive substrate,  And said second semiconductor fine particle layer formed on the first semiconductor fine particle layer,  And the dye which is selectively adsorbed on the first semiconductor fine particle layer made of,  The average particle diameter of said first semiconductor fine particle group forming the second semiconductor fine particle layer, is larger than the average particle diameter of said second semiconductor fine particle group forming said first semiconductor fine particle layer light incident side electrode, characterized in that.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • THE DOSHISHA
  • 発明者(英語)
  • YOSHIKADO SHINZO
  • SATO YUUKI
  • KAWAKAMI RYO
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG

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