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BONDING LAYER STRUCTURE USING ALLOY BONDING MATERIAL, FORMING METHOD FOR SAME, SEMICONDUCTOR DEVICE HAVING SAID BONDING LAYER STRUCTURE, AND METHOD FOR MANUFACTURING SAME

外国特許コード F160008817
整理番号 (S2015-0010-N0)
掲載日 2016年8月9日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2015JP077938
国際公開番号 WO 2016052700
国際出願日 平成27年10月1日(2015.10.1)
国際公開日 平成28年4月7日(2016.4.7)
優先権データ
  • 特願2014-203676 (2014.10.2) JP
  • 特願2014-248826 (2014.12.9) JP
発明の名称 (英語) BONDING LAYER STRUCTURE USING ALLOY BONDING MATERIAL, FORMING METHOD FOR SAME, SEMICONDUCTOR DEVICE HAVING SAID BONDING LAYER STRUCTURE, AND METHOD FOR MANUFACTURING SAME
発明の概要(英語) Provided are a bonding layer structure using the alloy bonding material, forming method for the same, semiconductor device having said bonding layer structure and method for manufacturing the same, said bonding layer structure being a structure for a bonding layer formed by bonding materials A and B to be bonded using an alloy bonding material, wherein the alloy bonding material is a Zn-Al eutectoid alloy and, at the bonding surface for each of the materials A and B to be bonded and the alloy bonding material, the dendrite arm spacing (DAS) of the Al rich phase (α phase) included in the bonding layer present within the bonding surface for the material to be bonded having the smaller surface area or within the bonding surfaces for the materials to be bonded having the same surface areas is greater than 0.06 µm and less than 0.3 µm. Thus, it is possible to assure sufficient wettability, achieve high temperature bonding strength, and improve connection reliability due to the stress-relaxation effect.
特許請求の範囲(英語) [claim1]
1. Being structure of the connecting layer which connects with suffering jointing material A and B with the alloyed junction material and is formed,
The aforementioned alloyed junction material to be the Zn-Al eutectoid type alloy, at the same time
On the respective composition plane of aforementioned suffering jointing material A and B and the aforementioned alloyed junction material, either one inside the composition plane of the suffering jointing material of the method which possesses the small area, or also either one the Al rich phase which is included in the connecting layer which exists inside the composition plane of the suffering jointing material which possesses the same area (I phase) [dendoraidoamusupeshingu] (DAS) exceeds 0.06 .micro.m, the connecting layer system by the alloyed junction material which features that it is under 0.3 .micro.m.
[claim2]
2. On the respective composition plane of aforementioned suffering jointing material A and B and the aforementioned alloyed junction material, the connecting layer system by the alloyed junction material of statement in the claim 1 which features that it possesses the constitution which either one inside the composition plane of the suffering jointing material of the method which possesses the small area, or also either one the connecting layer which exists inside the composition plane of the suffering jointing material which possesses the same area exceeds and 30 mass % 97 mass % consists of the Al-0-1.5 mass %Cu-0-0.05 mass %Mg-Zn system below.
[claim3]
3. Being method in order to form the structure of connecting layer of statement in claim 1 or 2,
With aforementioned suffering jointing material A and B, the Zn-Al eutectoid type alloyed junction material which consists of 17 mass %-30 mass %Al-0-1.5 mass %Cu-0-0.05 mass %Mg-Zn systems while lying between, pressurizing the operation time of desire of keeping in a state where it heats the aforementioned jointing material to the semi-melted temperature range after 1 times or 2 times or more repeating, the annealing formation method of the connecting layer system which features that it does.
[claim4]
4. Being method in order to form the structure of connecting layer of statement in claim 1 or 2,
After with aforementioned suffering jointing material A and B, 30 mass % it exceeds and 97 mass % the Zn-Al eutectoid type alloyed junction material which consists of the Al-0-1.5 mass %Cu-0-0.05 mass %Mg-Zn system below it lies between, heats the aforementioned jointing material to the semi-melted temperature range in compressed or non-pressure state, time of desire keeping the annealing formation method of the connecting layer system which features that it does.
[claim5]
5. Before the operation time of desire of keeping in a state where the aforementioned jointing material is heated to the semi-melted temperature range, in the claim 3 which features that the operation time of desire of keeping in a state where it is heated to the temperature range which reveals super plastic phenomenon is done or 4 formation method of connecting layer system of statement.
[claim6]
6. In either of the claim 3-5 which features that the operation of heating the aforementioned jointing material to the semi-melted temperature range, time of desire keeping in a state where it is pressurized, 30 mass % exceeding and 97 mass % after forming the connecting layer system which possesses the constitution which consists of the Al-0-1.5 mass %Cu-0-0.05 mass %Mg-Zn system below, cooling when it is pressurized that way, making the metamorphosis super plastic point pass is done formation method of connecting layer system of statement.
[claim7]
7. Directly or through the ceramic baseplate in the semiconductor base substance and the said semiconductor base substance, it has the metal baseplate which is connected by connecting layer, the semiconductor device which features that the aforementioned connecting layer has the structure of statement in claim 1 or 2.
[claim8]
8. In the claim 7 which features that the aforementioned semiconductor base substance is the wide gap semiconductor the semiconductor device of statement.
[claim9]
9. Directly or through the ceramic baseplate in the semiconductor base substance and the said semiconductor base substance, it has the metal baseplate which is connected by connecting layer, production method of the semiconductor device which features that structure of the aforementioned connecting layer is formed to either of the claim 3-6 by the formation method of statement.
[claim10]
10. In the claim 9 which features that the aforementioned semiconductor base substance is the wide gap semiconductor production method of the semiconductor device of statement.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • IBARAKI UNIVERSITY
  • 発明者(英語)
  • ONUKI JIN
  • TAMAHASHI KUNIHIRO
  • CHIBA AKIO
  • SUGAWARA YOSHITAKA
  • MOTOHASHI YOSHINOBU
  • SAKUMA TAKAAKI
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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