TOP > 外国特許検索 > LENGTH MEASURING ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE

LENGTH MEASURING ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE

外国特許コード F160008913
整理番号 (S2015-0843-N0)
掲載日 2016年12月6日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP001869
国際公開番号 WO 2016157910
国際出願日 平成28年3月31日(2016.3.31)
国際公開日 平成28年10月6日(2016.10.6)
優先権データ
  • 特願2015-073097 (2015.3.31) JP
発明の名称 (英語) LENGTH MEASURING ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE
発明の概要(英語) The objective of the present invention is to provide a length measuring element which has a large light receiving surface area and which is advantageous for performing high-speed modulation with a high sensitivity and a low dark current, and a solid-state image capturing device employing said length measuring element. This length measuring element is provided with: an n-type surface embedded region (25) which is disposed selectively in an upper portion of a pixel-forming layer (22) in such a way as to form a photodiode, and which extends in the upper portion of the pixel-forming layer (22) from a light receiving portion to a position in which light is shielded by a light-shielding plate (51); n-type charge accumulating regions (24b, 24d, 24c) having a higher impurity concentration than the surface embedded region (25); a plurality of transfer gate electrodes (42, 44, 43) disposed adjacent to the charge accumulating regions; and an n-type guide region (26a), one end portion of which is disposed toward the bottom of an opening portion of the light-shielding plate (51), and the other end portion of which reaches portions of the transfer gate electrodes, and which has a higher impurity concentration than the surface embedded region (25) and a lower impurity concentration than the charge accumulating regions.
特許請求の範囲(英語) [claim1]
1. The pixel cambium which consists of the semiconductor of 1st electric conduction type and,
As possesses the open part, defined the position of the light absorbent section in the aforementioned pixel cambium of the lower part of the said open part, the sun shade which is arranged in the upper part of the aforementioned pixel cambium and,
In the aforementioned light absorbent section, as formed the photodiode with connecting structure of the aforementioned pixel cambium, it is arranged selectively on top of the aforementioned pixel cambium, in order furthermore, to arrive to the plural positions which from position of the aforementioned light absorbent section shaded with the aforementioned sun shade, top of the aforementioned pixel cambium extending being present, it forms the plural convex sections in divergence form, the surface pad territory of 2nd electric conduction type and,
To be connected by the point of the aforementioned plural convex sections respectively, with 2nd electric conduction type the charge storage territory of higher impurity density than the aforementioned surface pad territory and,
The aforementioned plural convex sections respectively, adjoining to the aforementioned charge storage territory, it is arranged, controls the transfer of signal charge to the aforementioned charge storage territory, plural flow control mechanisms and,
The end of one side was arranged in portion of the lower part of the aforementioned open part, in order for the other end which diverges in plural the aforementioned flow control mechanism to arrive at least to part, was arranged in portion of top of the aforementioned surface pad territory, at higher impurity density than the aforementioned surface pad territory, the aforementioned charge storage territory compared to it is low with 2nd electric conduction type the guide territory of impurity density and,
The measuring of length element which features that it has.
[claim2]
2. The aforementioned guide territory,
The end of one side is arranged in portion of the lower part of the aforementioned open part, the other end faces to the aforementioned flow control mechanism, with 2nd electric conduction type the auxiliary guide territory of higher impurity density than the aforementioned surface pad territory and,
The end of one side is arranged in the aforementioned auxiliary guide territory, the other end which diverges in plural the aforementioned flow control mechanism arrives at least to part, at higher impurity density than the aforementioned auxiliary guide territory, the aforementioned charge storage territory compared to it is low with 2nd electric conduction type the main guide territory of impurity density and,
In the claim 1 which features that it has the measuring of length element of statement.
[claim3]
3. On top of the aforementioned pixel cambium which is directly under the aforementioned guide territory, in the claim 1 which features that the block territory of higher impurity density than the aforementioned pixel cambium is had with 1st electric conduction type or 2 the measuring of length element of statement.
[claim4]
4. From position of the aforementioned light absorbent section of the aforementioned surface pad territory until position of the aforementioned divergence form on the middle of trunk route, the new convex section which projects to the direction which crosses in longitudinal direction of the said trunk route furthermore providing,
In the point of the said new convex section, either of the claim 1-3 which features that the discharge drain territory of higher impurity density than the aforementioned surface pad territory is connected with 2nd electric conduction type in 1 sections the measuring of length element of statement.
[claim5]
5. In order form of the envelope of the external form or the said external form of the aforementioned surface pad territory, way you surround on plane surface pattern and around the aforementioned guide territory in the position of the aforementioned light absorbent section, trapezoid and parabolic curved line, to form opposite U letter type, or opposite V letter type, either of the claim 1-4 which features that the width which was measured in vertical direction to the transport direction of the aforementioned signal charge gradually becomes wide in 1 sections the measuring of length element of statement.
[claim6]
6. The pixel cambium which consists of the semiconductor of 1st electric conduction type and,
As possesses the plural open parts, defined the position of the respective light absorbent section in the aforementioned pixel cambium of the lower part of the said plural open parts, the sun shade which is arranged in the upper part of the aforementioned pixel cambium and,
As it arranges the electric charge irregularity section arrangement territory which possesses the plural convex sections in the position where it shaded with the aforementioned sun shade it makes light absorbent ends of a quantity extend which from both ends of the said electric charge irregularity section arrangement territory corresponds to the number of aforementioned plural open parts facing toward the aforementioned plural open parts, the possession territory of the respective aforementioned light absorbent end is set by the size which can cover the respective area of the aforementioned plural open parts, respectively formed the photodiode with connecting structure of the aforementioned pixel cambium the aforementioned light absorbent section in respectively, the 2nd electric conduction type which was imbedded on top of the aforementioned pixel cambiumSurface pad territory and,
To be connected by the point of the aforementioned plural convex sections respectively, with 2nd electric conduction type the charge storage territory of higher impurity density than the aforementioned surface pad territory and,
The aforementioned plural convex sections respectively, adjoining to the aforementioned charge storage territory, it is arranged, controls the transfer of signal charge to the aforementioned charge storage territory, plural flow control mechanisms and,
It possessed divergence ends of a quantity which corresponds to the number of aforementioned plural open parts, from the position where it shaded with the aforementioned sun shade which is on aforementioned electric charge irregularity section arrangement territory the advanced part of the respective divergence end was arranged in the lower part of the aforementioned plural open parts, at higher impurity density than the aforementioned surface pad territory, the aforementioned charge storage territory compared to it is low with 2nd electric conduction type the guide territory of impurity density and,
The measuring of length element which features that it has.
[claim7]
7. The aforementioned guide territory,
The lower part of the aforementioned plural open parts it was arranged respectively, with 2nd electric conduction type the auxiliary guide territory of higher impurity density than the aforementioned surface pad territory and,
The advanced part of the respective divergence end arrived in the aforementioned auxiliary guide territory, the other end was arranged in the aforementioned electric charge irregularity section arrangement territory, at higher impurity density than the aforementioned auxiliary guide territory, the aforementioned charge storage territory compared to it is low with 2nd electric conduction type the main guide territory of impurity density and,
In the claim 6 which features that it has the measuring of length element of statement.
[claim8]
8. On top of the aforementioned pixel cambium which is directly under the aforementioned guide territory, in the claim 6 which features that the block territory of higher impurity density than the aforementioned pixel cambium is had with 1st electric conduction type or 7 the measuring of length element of statement.
[claim9]
9. The new convex section which projects to the direction which on the aforementioned both end side of the aforementioned surface pad territory crosses in longitudinal direction of the aforementioned electric charge irregularity section arrangement territory furthermore the respective providing,
Either of the claim 6-8 which features that the discharge drain territory of higher impurity density than the aforementioned surface pad territory is connected respectively, with 2nd electric conduction type of the point of the said new convex section in 1 sections the measuring of length element of statement.
[claim10]
10. The pixel cambium which consists of the semiconductor of 1st electric conduction type and,
As possesses the plural open parts around the pixel territory which is defined by aforementioned pixel cambium defined the position of the respective light absorbent section in the aforementioned pixel cambium of the lower part of the said plural open parts, the sun shade which is arranged in the upper part of the aforementioned pixel cambium and,
It arranged the electric charge irregularity section arrangement territory which possesses the plural convex sections in central position of the aforementioned pixel territory which shaded with the aforementioned sun shade it made light absorbent ends of a quantity which from the said electric charge irregularity section arrangement territory corresponds to the number of aforementioned plural open parts radial pattern extend facing toward the aforementioned plural open parts, the possession territory of the respective aforementioned light absorbent end it was set by the size which can cover the respective area of the aforementioned plural open parts, as respectively formed the photodiode with connecting structure of the aforementioned pixel cambium the aforementioned light absorbent section in respectively, it was imbedded on top of the aforementioned pixel cambiumSurface pad territory of 2nd electric conduction type and,
To be connected by the point of the aforementioned plural convex sections respectively, with 2nd electric conduction type the charge storage territory of higher impurity density than the aforementioned surface pad territory and,
The aforementioned plural convex sections respectively, adjoining to the aforementioned charge storage territory, it is arranged, controls the transfer of signal charge to the aforementioned charge storage territory, plural flow control mechanisms and,
It possessed divergence ends of a quantity which corresponds to the number of aforementioned plural open parts, from the position where it shaded with the aforementioned sun shade which is on aforementioned electric charge irregularity section arrangement territory the advanced part of the respective divergence end faced to radial pattern in the lower part of the aforementioned plural open parts, at higher impurity density than the aforementioned surface pad territory, the aforementioned charge storage territory compared to it is low with 2nd electric conduction type the guide territory of impurity density and,
The measuring of length element which features that it has.
[claim11]
11. The aforementioned guide territory,
With the 2nd electric conduction type where the lower part of the aforementioned plural open parts is arranged respectively the auxiliary guide territory of higher impurity density than the aforementioned surface pad territory and,
It possessed divergence ends of a quantity which corresponds to the number of aforementioned auxiliary guide territories, from position of aforementioned electric charge irregularity section arrangement territory the advanced part of the respective divergence end faced to radial pattern in the lower part of the aforementioned plural auxiliary guide territories, at higher impurity density than the aforementioned auxiliary guide territory, the aforementioned charge storage territory compared to it is low with 2nd electric conduction type the main guide territory of impurity density and,
In the claim 10 which features that it has the measuring of length element of statement.
[claim12]
12. On top of the aforementioned pixel cambium which is directly under the aforementioned guide territory, in the claim 10 which features that the block territory of higher impurity density than the aforementioned pixel cambium is had with 1st electric conduction type or 11 the measuring of length element of statement.
[claim13]
13. On the side which is close to the aforementioned light absorbent end of the place where it extends to the aforementioned radial pattern of the aforementioned surface pad territory, the new convex section which projects to the direction which crosses in the aforementioned radial direction furthermore the respective providing,
Either of the claim 10-12 which features that the discharge drain territory of higher impurity density than the aforementioned surface pad territory is connected respectively, with 2nd electric conduction type of the point of the said new convex section in 1 sections the measuring of length element of statement.
[claim14]
14. Adjoining to the aforementioned discharge drain territory, in the claim 5 which features that the discharge control mechanism which controls the discharge of electric charge to the aforementioned discharge drain territory which is arranged, by way of the aforementioned new convex section furthermore is had, 9 or 13 the measuring of length element of statement.
[claim15]
15. Each one of the aforementioned plural flow control mechanisms,
The gate insulator film which is provided on each one of the aforementioned plural convex sections and,
The transfer gate electrode which is provided respectively on the said gate insulator film and,
Either of the claim 1-14 which features that it has, it controls the electric potential of the transfer road where aforementioned plural convex sections are defined respectively by respective voltage which is impressed in the said transfer gate electrode, controls the movement to the aforementioned plural charge storage territories of the aforementioned signal charge respectively in 1 sections the measuring of length element of statement.
[claim16]
16. Each one of the aforementioned plural flow control mechanisms,
In order with respect to plane surface pattern, to put each one of the aforementioned plural convex sections transfer direction of the aforementioned signal charge according to the direction which crosses, through the insulator film with respect to the aforementioned pixel cambium, the electric field control electrode of the pair which is arranged and,
By having, it impresses the electric field control voltage which differs to the respective electric field control electrode mutually, changes the empty *** conversion electric potential of the aforementioned plural convex sections, either of the claim 1-15 which features that movement of the aforementioned signal charge which in the aforementioned plural convex sections is transferred is controlled in 1 sections the measuring of length element of statement.
[claim17]
17. The pixel cambium which consists of the semiconductor of 1st electric conduction type and,
As possesses the open part, defined the position of the light absorbent section in the aforementioned pixel cambium of the lower part of the said open part, the sun shade which is arranged in the upper part of the aforementioned pixel cambium and,
In the aforementioned light absorbent section, as formed the photodiode with connecting structure of the aforementioned pixel cambium, it is arranged selectively on top of the aforementioned pixel cambium, in order furthermore, to arrive to the plural positions which from position of the aforementioned light absorbent section shaded with the aforementioned sun shade, top of the aforementioned pixel cambium extending being present, it forms the plural convex sections in divergence form, the surface pad territory of 2nd electric conduction type and,
To be connected by the point of the aforementioned plural convex sections respectively, with 2nd electric conduction type the charge storage territory of higher impurity density than the aforementioned surface pad territory and,
The aforementioned plural convex sections respectively, adjoining to the aforementioned charge storage territory, it is arranged, controls the transfer of signal charge to the aforementioned charge storage territory, plural flow control mechanisms and,
The end of one side was arranged in portion of the lower part of the aforementioned open part, in order for the other end which diverges in plural the aforementioned flow control mechanism to arrive at least to part, was arranged in portion of top of the aforementioned surface pad territory, at higher impurity density than the aforementioned surface pad territory, the aforementioned charge storage territory compared to it is low with 2nd electric conduction type the guide territory of impurity density and,
The solid image pickup device which features that the pixel which it has is arranged on the plural semiconductor chips.
[claim18]
18. The aforementioned pixel in respectively, from position of the aforementioned light absorbent section of the aforementioned surface pad territory until position of the aforementioned divergence form on the middle of trunk route, the new convex section which projects to the direction which crosses in longitudinal direction of the said trunk route furthermore providing,
In the point of the said new convex section, in the claim 17 which features that the discharge drain territory of higher impurity density than the aforementioned surface pad territory is connected with 2nd electric conduction type the solid image pickup device of statement.
[claim19]
19. The aforementioned pixel in respectively, in order form of the envelope of the external form or the said external form of the aforementioned surface pad territory, way you surround on plane surface pattern and around the aforementioned guide territory in the position of the aforementioned light absorbent section, trapezoid and parabolic curved line, to form opposite U letter type, or opposite V letter type, in the claim 17 which features that the width which was measured in vertical direction to the transport direction of the aforementioned signal charge gradually becomes wide or 18 the solid image pickup device of statement.
[claim20]
20. The pixel cambium which consists of the semiconductor of 1st electric conduction type and,
As possesses the plural open parts, defined the position of the respective light absorbent section in the aforementioned pixel cambium of the lower part of the said plural open parts, the sun shade which is arranged in the upper part of the aforementioned pixel cambium and,
As it arranges the electric charge irregularity section arrangement territory which possesses the plural convex sections in the position where it shaded with the aforementioned sun shade it makes light absorbent ends of a quantity extend which from both ends of the said electric charge irregularity section arrangement territory corresponds to the number of aforementioned plural open parts facing toward the aforementioned plural open parts, the possession territory of the respective aforementioned light absorbent end is set by the size which can cover the respective area of the aforementioned plural open parts, respectively formed the photodiode with connecting structure of the aforementioned pixel cambium the aforementioned light absorbent section in respectively, the 2nd electric conduction type which was imbedded on top of the aforementioned pixel cambiumSurface pad territory and,
To be connected by the point of the aforementioned plural convex sections respectively, with 2nd electric conduction type the charge storage territory of higher impurity density than the aforementioned surface pad territory and,
The aforementioned plural convex sections respectively, adjoining to the aforementioned charge storage territory, it is arranged, controls the transfer of signal charge to the aforementioned charge storage territory, plural flow control mechanisms and,
It possessed divergence ends of a quantity which corresponds to the number of aforementioned plural open parts, from the position where it shaded with the aforementioned sun shade which is on aforementioned electric charge irregularity section arrangement territory the advanced part of the respective divergence end was arranged in the lower part of the aforementioned plural open parts, at higher impurity density than the aforementioned surface pad territory, the aforementioned charge storage territory compared to it is low with 2nd electric conduction type the guide territory of impurity density and,
The solid image pickup device which features that the pixel which it has is arranged on the plural semiconductor chips.
[claim21]
21. The aforementioned pixel in respectively, the new convex section which projects to the direction which on the aforementioned both end side of the aforementioned surface pad territory crosses in longitudinal direction of the aforementioned electric charge irregularity section arrangement territory furthermore the respective providing,
In the claim 20 which features that the discharge drain territory of higher impurity density than the aforementioned surface pad territory is connected respectively, with 2nd electric conduction type of the point of the said new convex section the solid image pickup device of statement.
[claim22]
22. The pixel cambium which consists of the semiconductor of 1st electric conduction type and,
As possesses the plural open parts around the pixel territory which is defined by aforementioned pixel cambium defined the position of the respective light absorbent section in the aforementioned pixel cambium of the lower part of the said plural open parts, the sun shade which is arranged in the upper part of the aforementioned pixel cambium and,
It arranged the electric charge irregularity section arrangement territory which possesses the plural convex sections in central position of the aforementioned pixel territory which shaded with the aforementioned sun shade it made light absorbent ends of a quantity which from the said electric charge irregularity section arrangement territory corresponds to the number of aforementioned plural open parts radial pattern extend facing toward the aforementioned plural open parts, the possession territory of the respective aforementioned light absorbent end it was set by the size which can cover the respective area of the aforementioned plural open parts, as respectively formed the photodiode with connecting structure of the aforementioned pixel cambium the aforementioned light absorbent section in respectively, it was imbedded on top of the aforementioned pixel cambiumSurface pad territory of 2nd electric conduction type and,
To be connected by the point of the aforementioned plural convex sections respectively, with 2nd electric conduction type the charge storage territory of higher impurity density than the aforementioned surface pad territory and,
The aforementioned plural convex sections respectively, adjoining to the aforementioned charge storage territory, it is arranged, controls the transfer of signal charge to the aforementioned charge storage territory, plural flow control mechanisms and,
It possessed divergence ends of a quantity which corresponds to the number of aforementioned plural open parts, from the position where it shaded with the aforementioned sun shade which is on aforementioned electric charge irregularity section arrangement territory the advanced part of the respective divergence end faced to radial pattern in the lower part of the aforementioned plural open parts, at higher impurity density than the aforementioned surface pad territory, the aforementioned charge storage territory compared to it is low with 2nd electric conduction type the guide territory of impurity density and,
The solid image pickup device which features that the pixel which it has is arranged on the plural semiconductor chips.
[claim23]
23. The aforementioned pixel in respectively, on the side which is close to the aforementioned light absorbent end of the place where it extends to the aforementioned radial pattern of the aforementioned surface pad territory, the new convex section which projects to the direction which crosses in the aforementioned radial direction furthermore the respective providing,
In the claim 22 which features that the discharge drain territory of higher impurity density than the aforementioned surface pad territory is connected respectively, with 2nd electric conduction type of the point of the said new convex section the solid image pickup device of statement.
[claim24]
24. The aforementioned pixel in respectively, adjoining to the aforementioned discharge drain territory, in the claim 18,21 which features that the discharge control mechanism which controls the discharge of electric charge to the aforementioned discharge drain territory which is arranged, by way of the aforementioned new convex section furthermore is had or 23 the solid image pickup device of statement.
[claim25]
25. The aforementioned pixel in respectively, each one of the aforementioned plural flow control mechanisms,
The gate insulator film which is provided on each one of the aforementioned plural convex sections and,
The transfer gate electrode which is provided respectively on the said gate insulator film and,
Either of the claim 18-24 which features that it has, it controls the electric potential of the transfer road where aforementioned plural convex sections are defined respectively by respective voltage which is impressed in the said transfer gate electrode, controls the movement to the aforementioned plural charge storage territories of the aforementioned signal charge respectively in 1 sections the solid image pickup device of statement.
[claim26]
26. The aforementioned pixel in respectively, each one of the aforementioned plural flow control mechanisms,
In order with respect to plane surface pattern, to put each one of the aforementioned plural convex sections transfer direction of the aforementioned signal charge according to the direction which crosses, through the insulator film with respect to the aforementioned pixel cambium, the electric field control electrode of the pair which is arranged and,
By having, it impresses the electric field control voltage which differs to the respective electric field control electrode mutually, changes the empty *** conversion electric potential of the aforementioned plural convex sections, either of the claim 18-25 which features that movement of the aforementioned signal charge which in the aforementioned plural convex sections is transferred is controlled in 1 sections the solid image pickup device of statement.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • SHIZUOKA UNIVERSITY
  • 発明者(英語)
  • KAWAHITO SHOJI
国際特許分類(IPC)
指定国 (WO2016157910)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
ライセンスをご希望の方、特許の内容に興味を持たれた方は、下記までご連絡ください。

PAGE TOP

close
close
close
close
close
close