TOP > 外国特許検索 > VACUUM CHANNEL TRANSISTOR AND METHOD FOR MANUFACTURING SAME

VACUUM CHANNEL TRANSISTOR AND METHOD FOR MANUFACTURING SAME

外国特許コード F170008921
整理番号 (S2015-1431-N0)
掲載日 2017年1月19日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP064390
国際公開番号 WO 2016182080
国際出願日 平成28年5月13日(2016.5.13)
国際公開日 平成28年11月17日(2016.11.17)
優先権データ
  • 特願2015-099497 (2015.5.14) JP
発明の名称 (英語) VACUUM CHANNEL TRANSISTOR AND METHOD FOR MANUFACTURING SAME
発明の概要(英語) Provided is a vacuum channel transistor which uses a gallium nitride-aluminum nitride mixed crystal semiconductor, and wherein the electron emission efficiency is improved and the threshold voltage for electron emission is decreased. This vacuum channel transistor comprises: a conductor substrate 11 that constitutes a gate electrode; an insulating layer 12 that is formed on the conductor substrate and is formed of an insulating body; a source electrode 131 that is formed on the insulating layer; and a drain electrode 132 that is formed on the insulating layer so as to face the source electrode. The source electrode is formed of a crystal of a gallium nitride-aluminum nitride mixed crystal semiconductor having a wurtzite structure, and is arranged so that the angle between the main emission direction of electrons and the c-axis direction of the crystal structure is 30° or less.
特許請求の範囲(英語) [claim1]
1. Nitriding gallium - the electrode which consists of the crystal of wurtzite ore type structure of the aluminum nitride mixed crystal semiconductor (13) possessing,
The aforementioned electrode (131), in order for the angle which principal discharge direction of the electron and c axial direction of crystalline structure form to reach 30 degrees or less, the semiconductor device which is something which is arranged.
[claim2]
2. Being the semiconductor device which is stated in claim 1,
The aforementioned electrode (131), in order for principal discharge direction of the electron to become c axial direction of crystalline structure, the semiconductor device which is something which is arranged.
[claim3]
3. Being the semiconductor device which is stated in claim 2,
The aforementioned electrode (131), the nitriding gallium where aluminum nitride becomes entire 0.65 or more at ratio of the number of molecules - the semiconductor device which is something which consists of the aluminum nitride mixed crystal semiconductor.
[claim4]
4. The conductor baseplate which forms the gate electrode (11) with,
The aforementioned conductor baseplate (11) the insulating layer which consists of the insulator which was formed on (12) with,
The aforementioned insulating layer (12) the source electrode which was formed on (131) with,
In order the aforementioned insulating layer (12) to be formed on, the aforementioned source electrode (131) with to oppose the drain electrode which is provided (132) with possessing,
The vacuum channel transistor which the aforementioned source electrode (131), nitriding gallium - is something which consists of the crystal of wurtzite ore type structure of the aluminum nitride mixed crystal semiconductor, in order for the angle which principal discharge direction of the electron and c axial direction of crystalline structure form to reach 30 degrees or less, is something which is arranged.
[claim5]
5. Being the semiconductor device which is stated in claim 4,
The aforementioned source electrode (131), in order for principal discharge direction of the electron to become c axial direction of crystalline structure, the vacuum channel transistor which is something which is arranged.
[claim6]
6. Being the vacuum channel transistor which is stated in claim 5,
The aforementioned source electrode (131), the nitriding gallium where aluminum nitride becomes entire 0.65 or more at ratio of the number of molecules - the vacuum channel transistor which is something which consists of the aluminum nitride mixed crystal semiconductor.
[claim7]
7. Being the vacuum channel transistor which is stated in claim 6,
The aforementioned conductor baseplate (11), it is something which consists of n type silicon,
The aforementioned insulating layer (12), the vacuum channel transistor which is layer of silicon dioxide which were formed to the surface of the n type silicon substrate.
[claim8]
8. Being the vacuum channel transistor which is stated in claim 7,
The aforementioned source electrode (131), the particular source electrode (131) the metal electrode in order to turn on electricity (21) the vacuum channel transistor which is something which is connected.
[claim9]
9. Being the vacuum channel transistor which is stated in claim 8,
The binder course which the aforementioned source electrode (131) with the aforementioned metal electrode (21) with between, nitriding gallium - consists of the aluminum nitride mixed crystal semiconductor, it increases ratio of aluminum nitride the aforementioned metal electrode (21) from side the aforementioned source electrode (131) facing toward side (151) the vacuum channel transistor which it possesses.
[claim10]
10. Being the vacuum channel transistor which is stated in claim 9,
The aforementioned metal electrode (21) with the aforementioned binder course (151) with between, the contact layer which consists of nitriding gallium (161) the vacuum channel transistor which it possesses.
[claim11]
11. It consists of the crystal of wurtzite ore type structure of nitriding gallium, the baseplate where the surface is m aspect (14), nitriding gallium - the semiconductor layer which consists of the aluminum nitride mixed crystal semiconductor (13) the process which it crystallizes grows and,
The conductor baseplate which consists of n type silicon (11) making the surface oxidize, the insulating layer which consists of silicon dioxide (12) the process which is formed and,
The process which the aforementioned insulating layer (12) the surface and the aforementioned semiconductor layer (13) superposes the surface, the aforementioned insulating layer (12) with the aforementioned semiconductor layer (13) it connects and,
The aforementioned baseplate (14) the aforementioned semiconductor layer (13) from the process which is exfoliated and,
The aforementioned semiconductor layer (13) production method of the vacuum channel transistor which possesses with the process which it forms the source electrode (131) with the drain electrode (132) as.
[claim12]
12. Being production method of the vacuum channel transistor which is stated in claim 11,
The aforementioned source electrode (131) with the aforementioned drain electrode (132) with, in order principal discharge direction and the aforementioned semiconductor layer of the electron (13) for the angle which c axial direction of crystalline structure forms to reach 30 degrees or less, production method of the vacuum channel transistor which is something which is formed.
[claim13]
13. Being production method of the vacuum channel transistor which is stated in claim 12,
The aforementioned source electrode (131) with the aforementioned drain electrode (132) with, in order principal discharge direction of the electron the aforementioned semiconductor layer (13) to become c axial direction of crystalline structure, production method of the vacuum channel transistor which is something which is formed.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • YAMAGUCHI UNIVERSITY
  • 発明者(英語)
  • YOKOGAWA TOSHIYA
  • SANADA ATSUSHI
国際特許分類(IPC)
指定国 (WO2016182080)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG

PAGE TOP

close
close
close
close
close
close