TOP > 外国特許検索 > PHOTOCATALYST STRUCTURE AND PHOTOCELL

PHOTOCATALYST STRUCTURE AND PHOTOCELL

外国特許コード F170008924
整理番号 (AF19P012)
掲載日 2017年1月19日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP052531
国際公開番号 WO 2016136374
国際出願日 平成28年1月28日(2016.1.28)
国際公開日 平成28年9月1日(2016.9.1)
優先権データ
  • 特願2015-037227 (2015.2.26) JP
発明の名称 (英語) PHOTOCATALYST STRUCTURE AND PHOTOCELL
発明の概要(英語) In a heterojunction structure (50) employed in the present invention, a photocatalyst such as BiVO4 serves as a light-absorbing layer (40) and has a relatively small thickness of about several tens of nanometers or less. When a photocatalyst having such a small thickness as mentioned above is used, it becomes possible to collect almost all of electrons generated by the absorption of light with a nanorod (30) having excellent electric conductivity, and therefore the efficiency of collecting photogenerated carriers can be greatly improved. Thus, according to the present invention, it becomes possible to produce an excellent photocell having far superior properties compared with those of conventional photocells which utilize a photocatalyst such as BiVO4.
特許請求の範囲(英語) [claim1]
1. On the base substance where the surface has conductivity,
Being the nano- rod of the cylindrical condition which possesses conductivity, mean radius R [the nano- rod of 1] the unit area (.micro.m per (2)) at density of the N book to be provided substantially uniformly in array condition,
As for the surface of the aforementioned nano- rod, 80% or more being covered in average surface coverage C by the light absorption body membrane which possesses photocatalyst action, mean radius R [forms the heterojunction nano- rod of 2],
The band gap E of the aforementioned nano- rod [g] (A) the band gap E of the aforementioned light absorption body [g] is wider than (B) (E [g] (A)>E [g] (B)), at the same time, energy E of the valence electron band of the aforementioned nano- rod [c] (A) energy E of the valence electron band of the aforementioned light absorption body [c] is lower than as many as (B) (E [c] (A)<E [c] (B)),
When designating the mutual average interval of the aforementioned heterojunction nano- rod as L, the aforementioned mean radius R [2] R [2] satisfies <L/2, the photocatalyst structure.
[claim2]
2. The convex section of nano- particle condition plural we have possessed the surface of the aforementioned light absorption body membrane, said plural convex sections mean radius R of aforementioned heterojunction nano- rod [stipulate 2], in claim 1 the photocatalyst structure of statement.
[claim3]
3. As for average thickness of the part which excludes the convex section of the aforementioned light absorption body membrane which covers the surface of the aforementioned nano- rod, it is thinner than spread length of the electron and the positive hole in the said light absorption body, in claim 2 the photocatalyst structure of statement.
[claim4]
4. As for the aforementioned light absorption body membrane, the band gap is the semi-conducting material of direct transition type below 3eV, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim5]
5. The main component of the aforementioned nano- rod, WO [3], MoO [3], is either of ZnO, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim6]
6. As for main component of the aforementioned light absorption body, BiVO [4], BiFeO [3], BiNbO [4], BiTaO [4], SbVO [4], SbNbO [4], SbTaO [4], CrVO [4], CrNbO [4], CrTaO [4], FeVO [4], FeNbO [4], FeTaO [4], InVO [4], InNbO [4], InTaO [4], LaVO [4], LaNbO [4], LaTaO [4], CeVO [4], CeNbO [4], CeTaO [4], .alpha.-Fe[2] O [3], it is either of TaON, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim7]
7. The main component of the aforementioned nano- rod is tungsten oxide (WO [3]), the main component of the aforementioned light absorption body is bismuth trioxide vanadium (BiVO [4]), in claim 6 the photocatalyst structure of statement.
[claim8]
8. The aforementioned light absorption body includes the phosphoric acid cobalt, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim9]
9. Mean radius R of the aforementioned heterojunction nano- rod [2] mean radius R of the aforementioned nano- rod [difference .Delta.R of 1] is the range of 25nm<.Delta.R<40nm, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim10]
10. Mean radius R of the aforementioned nano- rod [as for 1] 40nm<R [1] <100nm there is a range, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim11]
11. As for height H of the aforementioned nano- rod there is the range of 500nm<H<2500nm, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim12]
12. As for mutual average interval L of the aforementioned heterojunction nano- rod there is the range of 190nm<L<320nm, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim13]
13. The unit area of the aforementioned nano- rod (.micro.m per (2)) as for number N there is the range of 10<N<30, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim14]
14. The surface of the aforementioned base substance is oxidation indium tin (ITO), either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim15]
15. The aforementioned light absorption body membrane is electric covering, either of the claim 1-3 in 1 sections the photocatalyst structure of statement.
[claim16]
16. Either of the claim 1-3 in 1 sections the photocatalyst structure of statement the photoelectric cell which is used as the anode.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • PIHOSH YURIY
  • MAWATARI KAZUMA
  • KAZOE YUTAKA
  • KITAMORI TAKEHIKO
  • TURKEVYCH IVAN
国際特許分類(IPC)
指定国 (WO2016136374)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) CREST Creation of Nanosystems with Novel Functions through Process Integration AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close