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PROTON CONDUCTOR AND FUEL CELL

外国特許コード F170008966
整理番号 AF19-12WO
掲載日 2017年3月13日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2015JP005311
国際公開番号 WO 2016063537
国際出願日 平成27年10月21日(2015.10.21)
国際公開日 平成28年4月28日(2016.4.28)
優先権データ
  • 特願2014-215905 (2014.10.23) JP
発明の名称 (英語) PROTON CONDUCTOR AND FUEL CELL
発明の概要(英語) A first proton-donating layer (20a) is a layer having a proton-donative functional group on the surface thereof, for example, a silicon oxide layer. A second proton-donating layer (20b) is also a layer having a proton-donative functional group on the surface thereof, for example, a silicon oxide layer. Negative surface charges are formed on the main surface section of a first substrate (10a) and the main surface section of a second substrate (10b), and these negative charges increase the conductivities of the protons in the aqueous solution supplied to a nano channel. Although, in the aqueous solution, proton migration due to hopping between water molecules contribute to diffusion, the negative charges formed on the main surfaces of the substrates (10a, 10b) attract protons in the aqueous solution, and the conduction of protons is efficiently achieved in a "high-speed transfer region" formed around the proton-donating layers (20a, 20b), so that the effect of increasing the proton conductivity can be achieved.
特許請求の範囲(英語) [claim1]
1. The 1st base substance which forms negative charge in the principal plane and,
Having the 1st proton provision layer which is provided in the principal plane of the aforementioned 1st base substance,
Thickness of the aforementioned 1st proton provision layer is below 20nm, the proton conductor which features thing.
[claim2]
2. The aforementioned 1st proton provision layer is the layer which possesses the proton provision characteristic functional group on the surface, in claim 1 the proton conductor of statement.
[claim3]
3. The aforementioned proton provision characteristic functional group the [shiranoru] basis, phosphorus acid radical, is either the Chita Nord basis or the sulfonic basis, in claim 2 the proton conductor of statement.
[claim4]
4. The aforementioned 1st proton provision layer is silicon oxide layer, in claim 1 the proton conductor of statement.
[claim5]
5. Being the 2nd base substance which possesses the principal plane which opposes to the principal plane of the aforementioned 1st base substance, the 2nd base substance which forms negative charge in the said principal plane and,
The 2nd proton provision layer which is provided in the principal plane of the aforementioned 2nd base substance and, furthermore having,
Interval d of the principal plane of the aforementioned 1st base substance and the principal plane of the aforementioned 2nd base substance is below 800nm above 50nm, either of the claim 1-4 in 1 sections the proton conductor of statement.
[claim6]
6. Thickness of the aforementioned 2nd proton provision layer is below 20nm, in claim 5 the proton conductor of statement.
[claim7]
7. The aforementioned 2nd proton provision layer is the layer which possesses the proton provision characteristic functional group on the surface, in claim 6 the proton conductor of statement.
[claim8]
8. The aforementioned proton provision characteristic functional group the [shiranoru] basis, phosphorus acid radical, is either the Chita Nord basis or the sulfonic basis, in claim 7 the proton conductor of statement.
[claim9]
9. The aforementioned 2nd proton provision layer is silicon oxide layer, in claim 5 the proton conductor of statement.
[claim10]
10. At least as for one side of the principal plane section of the aforementioned 1st base substance and the aforementioned 2nd base substance the electrode surface or strongly it consists of dielectric crystal, in claim 5 the proton conductor of statement.
[claim11]
11. Each of them of the principal plane sections of the aforementioned 1st base substance and the aforementioned 2nd base substance strongly consists of dielectric crystal, in claim 5 the proton conductor of statement.
[claim12]
12. The description above strongly dielectric crystal is the lithium niobate, in claim 10 or 11 the proton conductor of statement.
[claim13]
13. When the aforementioned proton conductor has two side walls which are vertical to the principal plane of the aforementioned 1st base substance and the principal plane of the aforementioned 2nd base substance, designating the interval of the said two side walls as L, the aspect ratio which is defined with R=L/d is 6 or less, in claim 5 the proton conductor of statement.
[claim14]
14. Each side wall of the aforementioned two provides proton provision layer for the surface, in claim 13 the proton conductor of statement.
[claim15]
15. The fuel cell which has the proton conductor of statement in either of the claim 1-4 as the aqueous solution passage.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • KAZOE YUTAKA
  • PIHOSH YURIY
  • MAWATARI KAZUMA
  • KITAMORI TAKEHIKO
  • KITAMURA KENJI
  • NAGATA TAKAHIRO
  • TABATA OSAMU
  • TSUCHIYA TOSHIYUKI
国際特許分類(IPC)
指定国 (WO201663537)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) CREST Creation of Nanosystems with Novel Functions through Process Integration AREA
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