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SKYRMION GENERATION DEVICE, SKYRMION GENERATION METHOD, AND MAGNETIC MEMORY DEVICE

外国特許コード F170008972
整理番号 K20301WO
掲載日 2017年3月13日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP057073
国際公開番号 WO 2016158230
国際出願日 平成28年3月8日(2016.3.8)
国際公開日 平成28年10月6日(2016.10.6)
優先権データ
  • 特願2015-072079 (2015.3.31) JP
発明の名称 (英語) SKYRMION GENERATION DEVICE, SKYRMION GENERATION METHOD, AND MAGNETIC MEMORY DEVICE
発明の概要(英語) Provided is a skyrmion generation method in which the power consumed during generation of skyrmions can be reduced. In this skyrmion generation method, an electric field is locally applied to an insulating magnetic body 12 having a chiral crystal structure using an electric field generator 16 while a magnetic field from a magnetic field generator 14 is applied to the magnetic body 12. Skyrmions are thereby generated inside the magnetic body 12. The magnetic body 12 preferably assumes the form of a thin film having, at least partially, a thickness of 2-300 nm. The magnetic field generator 14 preferably applies the magnetic field to the surface of the magnetic body 12 in a substantially perpendicular direction.
特許請求の範囲(英語) [claim1]
1. The insulated magnetic substance which possesses [sukirumion] phase and,
The electric field occurrence section which forms [sukirumion] in aforementioned magnetic internal section by impressing electric field vis-a-vis the aforementioned magnetic substance, and,
It features that it has, the [sukirumion] formation device.
[claim2]
2. It features that furthermore it has the magnetic field occurrence section which impresses the magnetic field in the aforementioned magnetic substance, in claim 1 the [sukirumion] formation device of statement.
[claim3]
3. The aforementioned magnetic field occurrence section the aforementioned magnetic field features that abbreviation vertically it impresses vis-a-vis the surface of the aforementioned magnetic substance, in claim 2 the [sukirumion] formation device of statement.
[claim4]
4. The aforementioned electric field occurrence section has had the needle-shaped electrode, it features that locally the aforementioned electric field is impressed vis-a-vis the aforementioned magnetic substance, either of the claim 1-3 in one section the [sukirumion] formation device of statement.
[claim5]
5. It features that the territory where the aforementioned electric field is impressed in the aforementioned magnetic substance is categorized to the vicinity of the edge of the aforementioned magnetic substance, either of the claim 1-4 in one section the [sukirumion] formation device of statement.
[claim6]
6. The aforementioned magnetic substance features that it is the thin film condition which at least partly possesses the thickness inside the range of 2-300nm, either of the claim 1-5 in one section the [sukirumion] formation device of statement.
[claim7]
7. The aforementioned magnetic substance [kiraru] features that it possesses crystalline structure, either of the claim 1-6 in one section the [sukirumion] formation device of statement.
[claim8]
8. It features that [sukirumion] is formed in aforementioned magnetic internal section by impressing the electric field from the electric field occurrence section vis-a-vis the insulated magnetic substance which possesses [sukirumion] phase, [sukirumion] formation method.
[claim9]
9. It features that the magnetic field furthermore is impressed vis-a-vis the aforementioned magnetic substance, in claim 8 [sukirumion] formation method of statement.
[claim10]
10. The aforementioned magnetic field it features that abbreviation vertically it impresses vis-a-vis the surface of the aforementioned magnetic substance, in claim 9 [sukirumion] formation method of statement.
[claim11]
11. It features that the aforementioned electric field occurrence section has the needle-shaped electrode, locally impresses the aforementioned electric field from the aforementioned needle-shaped electrode vis-a-vis the aforementioned magnetic substance, either of the claim 8-10 in one section [sukirumion] formation method of statement.
[claim12]
12. It features that the territory where the aforementioned electric field is impressed in the aforementioned magnetic substance is categorized to the vicinity of the edge of the aforementioned magnetic substance, either of the claim 8-11 in one section [sukirumion] formation method of statement.
[claim13]
13. The aforementioned magnetic substance features that it is the thin film condition which at least partly possesses the thickness inside the range of 2-300nm, either of the claim 8-12 in one section [sukirumion] formation method of statement.
[claim14]
14. The aforementioned magnetic substance [kiraru] features that it possesses crystalline structure, either of the claim 8-13 in one section [sukirumion] formation method of statement.
[claim15]
15. The insulated magnetic substance which possesses [sukirumion] phase, includes the plural storage regions and,
The electric field occurrence section which forms [sukirumion] in order to keep information by impressing electric field vis-a-vis the aforementioned storage region which is dealt with entry, in the particular storage region and,
It features that it has, the magnetic storage.
[claim16]
16. It features that furthermore it has the magnetic field occurrence section which impresses the magnetic field in the aforementioned storage region which is dealt with entry, in claim 15 the magnetic storage of statement.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • MOCHIZUKI MASAHITO
国際特許分類(IPC)
指定国 (WO2016158230)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
参考情報 (研究プロジェクト等) PRESTO Innovative Nano-electronics through Interdisciplinary Collaboration among Material, Device and System Layers AREA
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