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Method for producing thin-film solar cell, and thin-film solar cell NEW

外国特許コード F170008982
整理番号 FPV001A-TW
掲載日 2017年3月14日
出願国 台湾
出願番号 104108480
公報番号 201543698
出願日 平成27年3月17日(2015.3.17)
公報発行日 平成27年11月16日(2015.11.16)
優先権データ
  • 特願2014-055402 (2014.3.18) JP
発明の名称 (英語) Method for producing thin-film solar cell, and thin-film solar cell NEW
発明の概要(英語) (TW201543698)
The degree of freedom of design of electronic elements such as highly-efficient multi-junction thin-film solar cells is improved as a consequence of creating electronic elements such as self-standing thin-film solar cells which do not need a support substrate by directly or indirectly peeling off multiple graphene layers, which are formed on a substrate, from the surface of said substrate without essentially losing the properties of the graphene layers.
The present invention pertains to a method for producing a thin-film solar cell which contains: a first electrode containing a graphene layer; a semiconductor thin film; and a second electrode.
Said method for producing a thin-film solar cell is characterized by producing a self-standing thin-film solar cell containing a semiconductor thin film by: forming multiple graphene layers on a substrate; forming the semiconductor thin film and the second electrode on the graphene layers; and directly or indirectly peeling off the graphene layers from the substrate to use the peeled graphene layers as the first electrode.
特許請求の範囲(英語) [claim1]
1. Manufacture of method 1.1 thin film solar cells, it is the manufacture contains to have including 1st of the electrode and semiconductor thin film and 2nd electricity extremely thin film solar cell graphite olefin levels, and its characteristic lies in because of the following method makes to include the semiconductor thin film from the vertical thin film solar cell, namely: Forms the plural number level graphite olefin level on the foundation plate;
Forms the semiconductor thin film and 2nd electrode on this graphite olefin level;
Then, direct or denudes the graphite olefin level from the foundation plate indirectly, and will denude the graphite olefin level to make the 1st electrode.
[claim2]
2. Like the manufacture of method request item of 1 thin film solar cell, its a) from this foundation plate and b) in this graphite olefin level once in a while c) from this foundation plate adjacencies or the establishment the peeling in this graphite olefin levels with the sacrifice level, denuded the graphite olefin level.
[claim3]
3. Like request item manufacture of method 1 or 2 thin film solar cell, the plural number level graphite olefin level already forms because of chemistry evaporation law on the catalyst metallic foil or the board the graphite olefin level transfers India to form on the foundation plate.
[claim4]
4. Like manufacture of method request item of 2 thin film solar cell, the peeling with the sacrifice level was the chalcogen system layered materials, the oxidized graphite olefins or six side Jin boron nitride.
[claim5]
5. 1 kinds of thin film solar cells, its include: The 1st electrode, its includes already direct or denudes the graphite olefin level from the foundation plate indirectly;
Semiconductor thin film;
And the 2nd electrode.
[claim6]
6. 1 kinds of thin film solar cells, it 1 or 2 manufacture methods makes because of like the request item.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • ISHIKAWA RYOSUKE
  • MIYAJIMA SHINSUKE
  • KONAGAI MAKOTO
国際特許分類(IPC)
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