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Solar cell and fabrication method thereof

外国特許コード F170008983
整理番号 FPV002A-TW
掲載日 2017年3月14日
出願国 台湾
出願番号 104108569
公報番号 201539774
出願日 平成27年3月18日(2015.3.18)
公報発行日 平成27年10月16日(2015.10.16)
優先権データ
  • 特願2014-073369 (2014.3.31) JP
発明の名称 (英語) Solar cell and fabrication method thereof
発明の概要(英語) (TW201539774)
This solar battery (300) is a tandem-type solar battery in which, for instance, a top cell (100) provided on a light entry side, and a bottom cell (200) provided below this top cell (100) are layered, the materials having been selected so that the top cell (100) energy gap is greater than the bottom cell (200) energy gap.
In the present invention, the thickness of the crystalline Si layer of the top cell (100) is 30 [mu]m or less, and preferably in the 5 [mu]m to 10 μm range.
With an n-type crystalline Si layer at a thickness of 10 [mu]m or less, Auger recombination of the carriers inside the crystalline Si layer is remarkably suppressed, resulting in a pronounced improvement of the open voltage.
In addition, since the outputs can be drawn from each of the top cell (100) and the bottom cell (200) independently, current-matching of the generated current, which is necessary in serially connected tandem cells, does not have to be achieved.
特許請求の範囲(英語) [claim1]
1. Kinds of solar cells, its characteristic lies in: The above battery supposes in the main surface of substrate, otherwise this above battery including leans to have the transparent conducting layer and 1st electric conduction crystalless silicon material level and with this 1st electric conduction from the light incidence in order the 2nd electric conduction crystallization silicon level and stacking of structure 2nd electric conduction crystalless silicon level, and in surface of establishment this upside battery has by the refacing electrode, has the electrode back in this substrate establishment, 2nd the electric conduction crystallization silicon level's this above battery thickness is 30 .micro. below m.
[claim2]
2. According to claim 1, item of solar cell, 2nd the electric conduction crystallization silicon level's this upside battery thickness is 3 .micro.m-30 .micro.m.
[claim3]
3. According to claim 2, item of solar cell, 2nd the electric conduction crystallization silicon level's this upside battery thickness is 4 .micro.m-20 .micro.m.
[claim4]
4. According to claim 3, item of solar cell, 2nd the electric conduction crystallization silicon level's this upside battery thickness is 5 .micro.m-10 .micro.m.
[claim5]
5. According to claim 1, to 4 items of any item of solar cells, this upside battery has Type I crystalless silicon material level with the 2nd electric conduction crystallization silicon levels in this 1st electric conduction crystalless silicon material level.
[claim6]
6. According to claim 1, to 5 items of any item of solar cells, this upside battery has Type I crystalless silicon level with the 2nd electric conduction crystalless silicon levels in this 2nd electric conduction crystallization silicon level.
[claim7]
7. According to claim 1, to 6 items of any item of solar cells, has the insulation transparent protector with this substrates in this upside battery.
[claim8]
8. According to claim 7, item of solar cell, this insulation transparent protection formation by silicon oxide or the level of aluminum oxide constitution.
[claim9]
9. According to claim 1, to 8 items of any item of solar cells, this base system is constituted by the mono-crystal silicon.
[claim10]
10. According to claim 9, item of solar cell, this base system is constituted by the mono-crystal silicon, has with this substrates in this upside battery by the level that indium oxide tin (ITO) constitutes.
[claim11]
11. According to claim 9, or 10 items of solar cells, this base system lower part the battery by the mono-crystal silicon constitution, this above battery side is the 2nd electric conduction region, in its under forms the 1st electric conduction region, back the establishment in this lower part battery has this back electrode, and was serially connected.
[claim12]
12. According to claim 11, item of solar cell, this lower part battery is this upside battery side in this 2nd electric conduction region has to execute the body density this 2nd electric conduction region high 2nd electric conduction level.
[claim13]
13. According to claim 1, to 12 items of any item of solar cells, this upside battery has to suppose in 2nd of the transparent conducting layer this 2nd electric conduction crystalless silicon breast of level.
[claim14]
14. According to claim 13, item of solar cell, this upside battery is when the place above observes, the table of this 2nd transparent conducting layer delivers in person to have the bus department and reveals from this plural number of finger department bus department extending the comb shape.
[claim15]
15. According to claim 14, item of solar cell, in surface of establishment this upside battery has the electric properties connect in 1st of the comb this transparent conducting layers shape by the refacing electrode, and electrical connection in 2nd the comb this 2nd transparent conducting layer shape by refacing electrode.
[claim16]
16. According to claim 11, to 15 items of any item of solar cells, back the side in this lower part battery forms this 1st electric conduction region and 2nd 2nd electric conduction region, this 1st electric conduction region is forms to have the bus department and from this bus department extending the comb of shape of plural number finger department, this 2nd 2nd electric conduction region is forms to have the bus department and from this plural number of finger department bus department extending the comb shape, and executes the body density this 2nd electric conduction region to be high, this 1st electric conduction regionThe finger department is disposes by the established gap with this 2nd 2nd electric conduction region's finger department alternately.
[claim17]
17. According to claim 16, item of solar cell, back the establishment in this lower part battery has the electric properties to connect in 1st of the comb's this 1st electric conduction regions shape back electrode, and electrical connection back the electrode in this 2nd 2nd electric conduction region's 2nd comb shape.
[claim18]
18. According to claim 15, and 17 items of solar cells, when the place above observes this solar cell, this 1st comb shape by the refacing electrode's bus department back electrode's the bus department with this 2nd comb shape is in an end side located at being parallel the position, this 2nd comb shape by the refacing electrode's bus department back electrode's the bus department with this 1st comb shape is Yu Ling an end side located at being parallel the position.
[claim19]
19. According to claim 1, to 18 items of any item of solar cells, supposes in this upside battery transparent electric conduction formation indium oxide tin (ITO).
[claim20]
20. According to claim 1, to 19 items of any item of solar cells, supposes in light of incidence side this upside battery transparent electric conduction formation concurrently makes the reflection to prevent the level.
[claim21]
21. According to claim 11, to 20 items of any item of solar cells, this 2nd electric conduction crystallization silicon level this upside battery, is the design and this lower part battery for this upside electricity generation of electric current same thickness battery.
[claim22]
22. According to claim 1, to 21 items of any item of solar cells, when the place above observes this solar cell, this above battery has it to have the transparent conducting layer and 1st electric conduction crystalless silicon material level and 2nd electric conduction crystallization silicon level and stacking structure of 2nd electric conduction crystalless silicon level, has to be divided alines by an plural number of Nanowire or the wall established gap 2 Uygur arrangement in the established direction, and by the plural number of wall established gap 2 Uygur arrangement shape array of structure of nano wall, the diameter or this nano wall this Nanowire thickness, in thisIn 2 electric conduction crystallization silicon level's spot is below 10nm.
[claim23]
23. According to claim 22, item of solar cell, the adjacency this Nanowire or this nano wall are isolate by the insulation material mutually.
[claim24]
24. The manufacture methods of 24.1 solar cells, have the manufacture of method of solar cell above battery in the substrate, this manufacture method includes: The 1st step, it causes the 1st 2nd electric conduction silicon crystallization foundation plate by below the temperature of 400.deg.C with this substrate superficial each other fitting, this 1st 2nd electric conduction silicon crystallization foundation plate is forms the 2nd electric conduction crystalless silicon level in the face area, and establishment on this 2nd electric conduction crystalless silicon level has the transparent conducting layer, this base system forms the transparent conducting layer or the insulation transparent protector in the surface;
And the 2nd step, it from the back this 1st 2nd electric conduction silicon crystallization foundation plate Bo Huazhi thickness 30 .micro. below m, electric conduction crystallization silicon level as this upside battery 2nd.
[claim25]
25. Like manufacture of method application patent scope 24th item of solar cell, this base system forms the body density block high 2nd electric conduction level in the face area, and establishment on this 2nd electric conduction level has 2nd the 2nd electric conduction silicon crystallization foundation plate insulation transparent protector.
[claim26]
26. According to claim 24, or manufacture of method 25 items of solar cells, this 1st step has to this 1st 2nd electric conduction silicon crystallizes foundation plate's a surface and this substrate surface of time of step at least implementation surface activation processing.
[claim27]
27. Like manufacture of method application patent scope 26th item of solar cell, this superficial activation processing is by plasma at least of a execution processing or ozonizes.
[claim28]
28. According to claim 24, to manufacture of method 27 items of any item of solar cells, this transparent electric conduction formation indium oxide tin (ITO), this insulation transparent protection formation by silicon oxide or the level of aluminum oxide constitution.
[claim29]
29. According to claim 24, to manufacture of method 28 items of any item of solar cells, has before this 1st step crystallizes foundation plate's face area to implant the hydrogen of established metering to form the hydrogen ions toward this 1st 2nd electric conduction silicon to implant a step, in this 2nd step, because of implants the level to exert the machinery or the thermal shock to this hydrogen ions, causes the 2nd electric conduction crystallization silicon level from this 1st 2nd electric conduction silicon crystallization foundation plate peeling, but electric conduction crystallization silicon level as this upside battery 2nd.
[claim30]
30. Like manufacture of method application patent scope 29th item of solar cell, after this 2nd step, otherwise has place above forms in this 2nd electric conduction crystallization silicon level with the 2nd electric conduction the 1st electric conduction crystalless silicon material level 3rd step.
[claim31]
31. Like manufacture of method application patent scope 30th item of solar cell, this 3rd step has before the formation of this 1st electric conduction crystalless silicon material level, divides this 2nd electric conduction crystallization silicon level into Nanowire or the nano wall inferior step, this Nanowire is by an plural number of Nanowire established gap 2 Uygur arrangement, is precisely the diameter in this 2nd electric conduction crystallization silicon level spot is below 10nm, this nano wall is the wall alines in the established direction, and by the plural number of wall's established gap 2 Uygur arrangement shape nano wall is precisely in this 2nd electric conduction crystallizationIn silicon level's spot thickness is below 10nm.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • ICHIKAWA YUKIMI
国際特許分類(IPC)
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