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Memory circuit NEW

外国特許コード F170008987
整理番号 AF15-11TW
掲載日 2017年3月14日
出願国 台湾
出願番号 104126085
公報番号 201618101
出願日 平成27年8月11日(2015.8.11)
公報発行日 平成28年5月16日(2016.5.16)
優先権データ
  • 特願2014-164526 (2014.8.12) JP
発明の名称 (英語) Memory circuit NEW
発明の概要(英語) (TW201618101)
A memory circuit characterized by comprising a plurality of cells and a control unit, as follows.
The plurality of cells are laid out in a plurality of rows and a plurality of columns so as to form a plurality of banks obtained by partitioning the plurality of rows.
Each bank contains one or more rows.
Each cell comprises the following: a bistable circuit that holds data; and a nonvolatile element that stores, in a nonvolatile manner, the data held in the bistable circuit and restores said data to the bistable circuit.
The control unit: performs a store operation on each row in turn; sets, to a first voltage, the voltage supplied to a power supply for the cells in a first bank that is one of the abovementioned banks and includes the row on which the aforementioned store operation is being performed; and sets, to a second voltage that is lower than the aforementioned first voltage but at which the data in the bistable circuits is preserved, the voltages supplied to power supplies for cells that are not in the aforementioned first bank.
特許請求の範囲(英語) [claim1]
1. Kinds of memory circuits, its characteristic to include: Plural number memory butcher (cell), each memory butcher contains to have: The two-state circuit, is the memory material;
And the non-volatile part, is the non-volatility storage memory in the above two-state circuit's material, material of non-volatility storage, in the above two-state circuit restoration;
The above plural number memory butcher arranges in the duplicate sequence and plural number line, forms the above duplicate sequence to be divided, contains 1 one by one or duplicate sequence plural number memory storehouse (bank);
And the control department, it the above duplicate sequence will carry on the storage movement in order, will supply to the above plural number memory storehouse, contains carries on storage movement row of 1st memory storehouses' the voltage of power source of memory butcher, supposes for the 1st voltage, will supply to the above plural number memory storehouse, above 1st memory storehouse the voltage outside of power source of memory butcher, supposes to be lower than the above 1st voltage, and maintains above two-state circuit the 2nd voltage of material.
[claim2]
2. Like request item of 1 memory circuit, the above control department to contains each memory storehouse that the row of storage movements ended, will supply to the voltage of power source of above memory butcher supposes for the above 2nd voltage.
[claim3]
3. Like request item of 1 memory circuit, the above control department to contains each memory storehouse that the row of storage movements ended, shuts off the supplies to the voltage of power source of above memory butcher.
[claim4]
4. Like request item 1 to threes any item of memory circuit, the end connection of above non-volatile part node above two-state circuit, another end connection in pilot wire;
The above plural number memory butcher has the cut one by one, it between above node and above pilot wires, series connected connects with the above non-volatile part;
Supply the supplies to the voltage of power source of above plural number memory butcher to the above two-state circuit.
[claim5]
5. Like request item 1 to fours any item of memory circuit, the above plural number memory storehouse contains 1 row one by one.
[claim6]
6. 1 kinds of memory circuits, its characteristic to include: Plural number memory butcher, each memory butcher contains to have: Two-state circuit, its memory material;
And non-volatile part, its non-volatility storage memory in the above two-state circuit's material, material of non-volatility storage, in the above two-state circuit restoration;
1 or plural number power source cut, change supplies to the voltage of power source of above plural number memory butcher;
And the control department, was divided because of 1 power source cut supplies common voltage's region for a plural number sub-area, in the above region, during above plural number sub-area various carries on the storage movement.
[claim7]
7. Like request item of 6 memory circuits, the above plural number memory butcher arranges in the duplicate sequence and plural number line;
The above region contains 1 or duplicate sequence;
1 row was divided for a above plural number sub-area.
[claim8]
8. Like request item of 7 memory circuits, the above plural number memory butcher contains to have the cut one by one, the storage of its execution material;
In each memory butcher of above plural number sub-area above cut connection in common sub-cut line;
The sub-cut line connection of same row in 1 cut line;
Including selecting circuit, in 1 of sub-area its choice above plural number sub-areas, to choice sub-cut line of sub-area, output opening above cut signal.
[claim9]
9. Like request item of 8 memory circuits, the end connection of above non-volatile part node above two-state circuit, another end connection in pilot wire;
The above cut between above node and above pilot wires, series connected connects with the above non-volatile part;
Supply the supplies to the voltage of power source of above memory butcher to the above two-state circuit.
[claim10]
10. Like request item 7 to nines any item of memory circuit, a above plural number sub-area contains in the same row one by one continual memory butcher.
[claim11]
11. Like request item 7 to nines any item of memory circuit, a above plural number sub-area contains in the same row one by one periodic arrangement memory butcher.
[claim12]
12. Like request item 6 to 11 any item of memory circuit, it include: Determines the electric circuit, a determination above plural number sub-area the above two-state circuit in each memory butcher with the above non-volatile part's material consistent or is inconsistent;
When the selecting circuit, the above material is inconsistent, does not carry on to correspond sub-area the storage movement in memory butcher's, when the above material is consistent, does not carry on above corresponds sub-area the storage movement in memory butcher's.
[claim13]
13. 1 kinds of memory circuits, its characteristic to include: Plural number memory butcher, each memory butcher contains to have: Two-state circuit, its memory material;
And non-volatile part, its end connection node above two-state circuit, another end connection in pilot wire, non-volatility storage memory in the above two-state circuit's material, material of non-volatility storage, in the above two-state circuit restoration;
And the cut, it between above node and above pilot wires, series connected connects with the above non-volatile part;
The above plural number memory butcher arranges in each connection in the common cut line duplicate sequence, and each connection in the plural number line of common pilot wire;
Determines the electric circuit, establishes regarding same pilot wire commonly, according to corresponds pilot wire's signal, the determination connection corresponds the above two-state circuit in memory of butcher pilot wire to above with the above non-volatile part's material consistent or is inconsistent;
When the selecting circuit, the above material is inconsistent, the command connects above corresponds above cut opening in memory of butcher pilot wire, when the above material is consistent, the command connects above corresponds the cut closure of pilot wire.
[claim14]
14. Like request item of 13 memory circuits, 1 row was divided to contain a plural number of sub-area plural number memory butcher one by one;
When the above selecting circuit to corresponds at least 1 of sub-areas plural number memory butcher materials is inconsistent, makes above to correspond above cut opening in sub-area, when above corresponds in the sub-area the plural number memory butcher's material is completely consistent, makes above to correspond the above cut closure in sub-area.
[claim15]
15. Like request item of 14 memory circuits, the above determination electric circuit a plural number pilot wire in same sub-area establishes commonly.
[claim16]
16. Like request item 13 to 15 any item of memory circuit, a pair of above non-volatile part connects separately in the above two-state circuit the supplementary node;
A pair of above pilot wire connects separately in the above pair of non-volatile part;
The above determination electric circuit basis above two-state circuit's material and above pair of pilot wire's signal, the determination above material consistent or is inconsistent.
[claim17]
17. 1 kinds of memory circuits, its characteristic to include: The two-state circuit, the slave power supply line and meets the grounding by the service voltage, the memory material;
The non-volatile part, its end connection the node above two-state circuit, another end connection in the pilot wire, and above another ends in the above the electric currents between ends changes because of the class because of the resistance value, by non-volatility storage memory in the above two-state circuit's material, material of non-volatility storage, in the above two-state circuit restoration;
FET, the source and Ji Ji between above node and above pilot wires, series connected connect with the above non-volatile part;
And the control department, in the above two-state circuit, carries on during the material volatility 1st, when above FET that reads and reads out is n channel FET, causes to exert above FET floodgate voltage extremely, is lower than above meets grounding's voltage, when above FET is p channel FET, causes its to be higher than the voltage of above power line.
[claim18]
18. Like request item of 17 memory circuits, the above control department maintains in the above two-state circuit's material, and voltage of above power line and above meets grounding the disparity in voltage, during when becoming is smaller than the voltage of above one, above power line and above meets 2nd grounding's voltage disparity, when above FET is n channel FET, causes to exert above FET floodgate voltage extremely, during being lower than above 1st, above meets grounding's voltage, when above FET is p channel FET, during causing its to be higher than the voltage of above one, above power line.
[claim19]
19. Like request item 17 or 18 memory circuits, above control department, when above FET is n channel FET, will cause to store up in the above non-volatile part's material, during the above two-state circuit restoration will exert above FET floodgate voltage extremely, will be lower than remembers in the above two-state circuit's material, during non-volatile memory non-volatility storage will exert above FET floodgate voltage extremely;
When above FET is p channel FET, during causing the above restoration, exerts above FET floodgate voltage extremely, during being higher than the above storage, exerts above FET floodgate voltage extremely.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • SUGAHARA SATOSHI
  • SHUTO YUSUKE
  • YAMAMOTO SHUICHIRO
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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