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Field-effect transistor

外国特許コード F170008990
整理番号 AF15-10TW
掲載日 2017年3月14日
出願国 台湾
出願番号 104133519
公報番号 201626464
出願日 平成27年10月13日(2015.10.13)
公報発行日 平成28年7月16日(2016.7.16)
優先権データ
  • 特願2014-211575 (2014.10.16) JP
発明の名称 (英語) Field-effect transistor
発明の概要(英語) (TW201626464)
A field-effect transistor (100) is provided with a channel (30c) formed of a semiconductor nano wire (30).
A source region (30s) and a drain region (30d) are formed adjacent to the channel (30c), and a gate electrode (40) is provided above the channel.
On the main surface of the semiconductor nano wire (30), a mask layer (50) is provided, said mask layer containing dopant atoms to be a donor or an acceptor.
Though the dopant atoms are ion-implanted into the mask layer (50) on a side wall portion of the gate electrode (40) as well, the implanted ions stay at an upper portion, and are not implanted as far as to a portion in contact with the main surface of the semiconductor nano wire (30).
Consequently, a mask layer portion formed with a thickness W on the side wall of the gate electrode (40) does not function as a diffusion source of the dopant.
特許請求の範囲(英語) [claim1]
1. Kinds of field effect transistors, it has to have by the channel that of semiconducting material department institute thickness H(nm) forms, is next the source region that this channel forms and draws extremely the region, with establishing in field of effect transistor this channel above floodgate extremely region, floodgate of extremely length this floodgate extremely region (L g) is below 4nm above 10nm, central committee of region's this channel doping atomicity is below 1.
[claim2]
2. 1 kinds of field effect transistors, it has to have by the channel that of semiconducting material department institute thickness H(nm) forms, is next the source region that this channel forms and draws extremely the donor or the acceptor shade of level of doping atom region and with establishing in field of effect transistor this channel above floodgate extremely region, has to have the shade level, it is establishes in this semiconducting material department in the main surface, contains to be, is the establishment in the sidewall thickness of floodgate of extremely electrode this floodgate extremely region is the shade of level W(nm), this shade formation covers to form this source region and draws extremely the region this semiconducting material departmentMain superficial department, floodgate of extremely length this floodgate extremely region (L g) is below 4nm above 10nm, this floodgate extremely electricity extremely sidewall this shade level thickness W(nm) is in [3H-2] /7+ [10-L g] /2<=W<=[3H+19]/7 scope.
[claim3]
3. Like request item of 2 field effect transistor, central committee of region's this channel doping atomicity is below 1.
[claim4]
4. Like request item 1 to threes any item of field effect transistor, faces this source region from this channel nose and draws extremely the 2nm of region's region side adulterant density is 5x10 19 cm over -3.
[claim5]
5. Like request item 1 to fours any item of field effect transistor, this semiconducting material department is including any of material silicon, germanium and III-V race chemical compound semiconductors.
[claim6]
6. Like request item of 5 field effect transistors, this semiconducting material department includes the silicon, this shade level is the silicon oxide film or the silicide membrane.
[claim7]
7. Like request item of 6 field effect transistors, this adulterant for phosphorus, antimony, arsenic, boron, aluminum, indium and gallium any one.
[claim8]
8. Like request item of 5 field effect transistors, this semiconducting material department includes the germanium, this shade level is the germanium oxide film or the germanium membrane.
[claim9]
9. Like request item of 8 field effect transistors, this adulterant for phosphorus, antimony, arsenic, boron, aluminum, indium and gallium any one.
[claim10]
10. Like request item of 5 field effect transistors, this semiconducting material department including the III-V race chemical compound semiconductor, this shade level is the silicon oxide film.
[claim11]
11. Like request item of 10 field effect transistors, this adulterant for zinc, silicon and acupuncture needles any one.
[claim12]
12. Like request item 1 to fours any item of field effect transistor, this semiconducting material department is silicon - Nanowire and germanium - one of Nanowire and III-V race chemical compound semiconductor Nanowire any.
[claim13]
13. Manufacture of method 13.1 field effect transistors, it has by of semiconducting material department institute thickness H(nm) forms channel the manufacture of method of field effect transistor, it has: (L g) becomes below 4nm above 10nm by the floodgate length extremely the way, forms the step of floodgate extremely electrode above this channel;
Forms shade level the step, this shade formation covers this floodgate extremely electrode, and adjacency forms the source region with drawing extremely the region in this channel this semiconducting material department the main superficial department, is the sidewall thickness of this floodgate extremely electrode is the shade of level W(nm);
Pours into to this shade level is donor or acceptor the step of doping atom;
Causes to pour into to this shade level this doping atom proliferates to this source region with drawing extremely region's step;
This floodgate extremely electricity extremely sidewall this shade level thickness W(nm) hypothesis in [3H-2] /7+ [10-L g] /2<=W<=[3H+19]/7 scope.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • UEMATSU MASASHI
  • ITOH KOHEI
  • MORI NOBUYA
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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