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Semiconductor device which uses germanium layer as channel region and method for manufacturing same

外国特許コード F170008991
整理番号 AF15-12TW
掲載日 2017年3月14日
出願国 台湾
出願番号 104136329
公報番号 201630076
出願日 平成27年11月4日(2015.11.4)
公報発行日 平成28年8月16日(2016.8.16)
優先権データ
  • 特願2014-225622 (2014.11.5) JP
発明の名称 (英語) Semiconductor device which uses germanium layer as channel region and method for manufacturing same
発明の概要(英語) (TW201630076)
A semiconductor device which is provided with: a channel region which is formed within a germanium layer and has a first conductivity type; and a source region and a drain region, which are formed within the germanium layer and have a second conductivity type that is different from the first conductivity type.
This semiconductor device is configured such that the oxygen concentration in the channel region is lower than the oxygen concentration in a junction interface between the source region and/or the drain region and a region that has the first conductivity type and surrounds the source region and/or the drain region.
特許請求の範囲(英語) [claim1]
1. Kinds of semiconductor devices, its characteristic lies in has: The channel region, it forms in Yu Zheceng, and has the 1st electric conduction;
And the source region and draws region, it forms in the above germanium level, and has to be different from 2nd the electric conduction above 1st electric conduction;
The oxygen concentration of above channel region is lower than the above source region and draws extremely in the region at least region and a surrounding above at least region, and has the above 1st electric conduction region's the oxygen concentration of joint contact surface.
[claim2]
2. Like request 1 semiconductor device, the oxygen concentration of above channel region is 1x10 16 cm below -3, the oxygen concentration of above joint contact surface is higher than 1x10 16 cm -3.
[claim3]
3. Like request 2 semiconductor device, the oxygen concentration of above channel region is 5x10 15 cm below -3.
[claim4]
4. Like request item 1 or 2 semiconductor devices, the above 1st electric conduction is p, the above 2nd electric conduction is n.
[claim5]
5. Manufacture of method 5.1 semiconductor devices, its characteristic lies in contains the following step, namely: Forms the channel region, and this channel region forms in Yu Zheceng, and has the 1st electric conduction;
Forms the source region in the above germanium level and draws the region, and this source region and draws the region to be different extremely from 2nd the electric conduction above 1st electric conduction;
And the hypothesis oxygen concentration, to make the oxygen concentration of above channel region to be lower than the above source region and draws extremely in the region at least region and a surrounding above at least region, and has the above 1st electric conduction region's the oxygen concentration of joint contact surface.
[claim6]
6. Like manufacture of method request 5 semiconductor devices, the step of above hypothesis oxygen concentration contains the following step, namely: Constitutes the region of above channel region to reveal in the above germanium level, and constitutes the region of above joint contact surface surface on of above germanium level not to reveal under the condition, carries on the above germanium level in the reducible environment gas the heat treatment.
[claim7]
7. Like manufacture of method request 6 semiconductor devices, the above heat treatment step is the following step, namely: Are 1x10 germanium of level 16 cm over -3 carry on the heat treatment the above channel region and above joint contact surface oxygen concentration.
[claim8]
8. Like request item manufacture of method 6 or 7 semiconductor devices, its contains the following step, namely: Before the above heat treatment step, in constituting the region and the region of constitution above joint contact surface above channel region inducts the oxygen.
[claim9]
9. Like manufacture of method request 5 semiconductor devices, the step of above hypothesis oxygen concentration contains the following step, namely: To the region of constitution above channel region, in constituting the region of above joint contact surface selectively inducts the oxygen.
[claim10]
10. Like request item 5 to 7 and in manufacture of method nines any semiconductor device, the step of above hypothesis oxygen concentration is the following step, namely: Establishes the above oxygen concentration, to make the oxygen concentration of constitution above channel region 1x10 16 cm below -3, and oxygen concentration of above joint contact surface is higher than 1x10 16 cm -3.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • TORIUMI AKIRA
  • LEE CHOONG-HYUN
  • NISHIMURA TOMONORI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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