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GRAPHENE FILM, COMPOSITE BODY, METHOD FOR MANUFACTURING SAME, AND SINGLE-CRYSTAL SAPPHIRE SUBSTRATE

外国特許コード F170009021
整理番号 (S2015-1988-N15)
掲載日 2017年3月29日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP074943
国際公開番号 WO 2017034018
国際出願日 平成28年8月26日(2016.8.26)
国際公開日 平成29年3月2日(2017.3.2)
優先権データ
  • 特願2015-166432 (2015.8.26) JP
  • 特願2015-166434 (2015.8.26) JP
発明の名称 (英語) GRAPHENE FILM, COMPOSITE BODY, METHOD FOR MANUFACTURING SAME, AND SINGLE-CRYSTAL SAPPHIRE SUBSTRATE
発明の概要(英語) [Problem] To provide a high-quality graphene film in which the number of layers is controlled, and a sapphire substrate that is optimal for obtaining the graphene film. To clarify the characteristics of the sapphire substrate for growing the graphene film that are optimal for achieving a high-quality graphene film and for enabling control of the number of layers. [Solution] The inclination angle between the actual surface of the sapphire substrate for growing the graphene and the crystal lattice surface is set to greater than 0°, whereby a high-quality graphene film in which the number of layers is controlled can be obtained. A composite body is obtained having a single-crystal sapphire substrate for which the off angle is greater than 0°, a metal film epitaxially grown on the sapphire substrate, and a graphene film epitaxially grown on the metal film.
特許請求の範囲(英語) [claim1]
1. Off angle the 0.deg. super the mixture which possesses the [gurahuen] membrane on the metal membrane and the said metal membrane on the monocrystal sapphire baseplate and the said monocrystal sapphire baseplate which are.
[claim2]
2. The mixture of the claim 1 statement which features that the aforementioned off angle is the 0.1-1.5.deg..
[claim3]
3. In the claim 1 which features that the aforementioned metal membrane is Ni or 2 the mixture of statement.
[claim4]
4. The D band is not verified at the Raman spectrum of the aforementioned [gurahuen] membrane, from the claim 1 which features that at the same time the aforementioned [gurahuen] membrane is the monolayer [gurahuen] membrane in either of 3 the mixture of statement.
[claim5]
5. The area of the aforementioned monocrystal sapphire baseplate 100mm (2) in either of the claim 1-4 which features that it is above the mixture of statement.
[claim6]
6. The area of the aforementioned monocrystal sapphire baseplate 2025mm (2) in the claim 5 which features that is the mixture of statement.
[claim7]
7. In the measurement result of the Raman spectrum, half breadth of the G band 26cm (- 1) the [gurahuen] membrane which features that it is below.
[claim8]
8. Half breadth of the aforementioned G band 20-26cm (- 1) in the claim 7 which features that is the [gurahuen] membrane of statement.
[claim9]
9. Monocrystal [gurahuen] is included by part at least in the aforementioned [gurahuen] membrane, in the claim 7 which features that size of that monocrystal [gurahuen] is 3.14 .micro.m (2) or more or 8 the [gurahuen] membrane of statement.
[claim10]
10. Size of aforementioned monocrystal [gurahuen] 3.14 .micro.m (2) in the claim 9 which features that is the [gurahuen] membrane of statement.
[claim11]
11. From the claim 7 which features that the area of the aforementioned [gurahuen] membrane of monolayer is 50% or more in either of 10 the [gurahuen] membrane of statement.
[claim12]
12. From the claim 7 which features that the area of the aforementioned [gurahuen] membrane which has the same number of layers is 50% or more in either of 10 the [gurahuen] membrane of statement.
[claim13]
13. The area 100mm (2) in either of the claim 7-12 which features that it is above the [gurahuen] membrane of statement.
[claim14]
14. The aforementioned area 2025mm (2) in the claim 13 which features that is the [gurahuen] membrane of statement.
[claim15]
15. Inclined angle of the actual surface and the crystal lattice plane the 0.deg. super the mixture which from the claim 7 which is formed on the metal membrane on the sapphire baseplate which is possesses the [gurahuen] membrane of statement in either of 14.
[claim16]
16. The mixture which possesses the [gurahuen] membrane of statement in the claim 15 which is formed on the aforementioned metal membrane on the aforementioned sapphire baseplate where the aforementioned inclined angle is the 0.1-1.5.deg..
[claim17]
17. Off angle the 0.deg. super prepares the monocrystal sapphire baseplate which is, next the metal membrane epitaxial grows on the said sapphire baseplate, next the [gurahuen] membrane epitaxial grows on the said metal membrane, production method of the mixture.
[claim18]
18. In the claim 17 which features that the aforementioned off angle is the 0.1-1.5.deg. production method of the mixture of statement.
[claim19]
19. In the claim 17 which features that the aforementioned metal membrane is Ni or 18 production method of the mixture of statement.
[claim20]
20. From the claim 17 which features that the D band is not verified at Raman spectrum strength of the aforementioned [gurahuen] membrane, at the same time includes the monolayer [gurahuen] membrane in 19 production method of the mixture of statement.
[claim21]
21. The area of the aforementioned monocrystal sapphire baseplate 100mm (2) in either of the claim 17-20 which features that it is above production method of the mixture of statement.
[claim22]
22. The area of the aforementioned monocrystal sapphire baseplate 2025mm (2) in the claim 21 which features that is production method of the mixture of statement.
[claim23]
23. Production method of the [gurahuen] membrane which features that from claim 17 in 22 it exfoliates from the mixture of statement.
[claim24]
24. Production method of the mixture which features that the aforementioned [gurahuen] membrane which in either of the claim 17-22 exfoliates the aforementioned [gurahuen] membrane from the aforementioned mixture of statement, exfoliates next is copied to another baseplate.
[claim25]
25. Inclined angle of the actual surface and the crystal lattice plane the 0.deg. super prepares the sapphire baseplate which is, forms the metal membrane on the said sapphire baseplate, forms the [gurahuen] membrane on the said metal membrane, in the measurement result of the Raman spectrum, half breadth of the G band 26cm (- 1) production method of the mixture which features that the [gurahuen] membrane which is below was formed on the aforementioned sapphire baseplate.
[claim26]
26. In the claim 25 which features that you prepare the aforementioned sapphire baseplate where the aforementioned inclined angle is the 0.1-1.5.deg., half breadth of the aforementioned G band 20cm (- 1) -26cm (- 1) you are production method of the mixture of statement.
[claim27]
27. Monocrystal [gurahuen] is included by part at least in the aforementioned [gurahuen] membrane, in the claim 25 which features that size of that monocrystal [gurahuen] is 3.14 .micro.m (2) or more or 26 production method of the mixture of statement.
[claim28]
28. Size of aforementioned monocrystal [gurahuen] 3.14 .micro.m (2) in the claim 27 which features that is production method of the mixture of statement.
[claim29]
29. From the claim 25 which features that the area of the aforementioned [gurahuen] membrane of monolayer is 50% or more in 28 production method of the mixture of statement.
[claim30]
30. From the claim 25 which features that the area of the aforementioned [gurahuen] membrane which has the same number of layers is 50% or more in 28 production method of the mixture of statement.
[claim31]
31. From claim 25 in either of 30 exfoliating from the aforementioned mixture which is obtained by the production method of statement production method of the [gurahuen] membrane which can.
[claim32]
32. Production method of the mixture which features that the aforementioned [gurahuen] membrane which from claim 25 in either of 30 exfoliates the aforementioned [gurahuen] membrane from the aforementioned mixture of statement, exfoliates next is copied to another baseplate.
[claim33]
33. Off angle the 0.deg. super the monocrystal sapphire baseplate which is.
[claim34]
34. The monocrystal sapphire baseplate of the claim 33 statement where off angle is the 0.1-1.5.deg..
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA
  • YOKOHAMA CITY UNIVERSITY
  • 発明者(英語)
  • AOTA NATSUKO
  • AIDA HIDEO
  • TACHIBANA MASARU
  • MORISAKO SHIYO
国際特許分類(IPC)
指定国 (WO201734018)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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