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Memory circuit

外国特許コード F170009037
整理番号 AF15-01EP3
掲載日 2017年4月26日
出願国 欧州特許庁(EPO)
出願番号 16180034
公報番号 3109863
出願日 平成25年2月19日(2013.2.19)
公報発行日 平成28年12月28日(2016.12.28)
優先権データ
  • 特願2012-114988 (2012.5.18) JP
  • 2013EP-0791432 (2013.2.19) EP
発明の名称 (英語) Memory circuit
発明の概要(英語) (EP3109863)
A memory circuit includes: a ferromagnetic tunnel junction device, a readout circuit configured to read out data written into the ferromagnetic tunnel junction device in a nonvolatile manner, and a control unit configured not to write data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when an output of the readout circuit is the same as the data to be written into the ferromagnetic tunnel junction device in a nonvolatile manner, and configured to write the data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when the output of the readout circuit is not the same as the data to be written in a nonvolatile manner.
特許請求の範囲(英語) [claim1]
1. A memory circuit comprising: a ferromagnetic tunnel junction device; a readout circuit configured to read out data written into the ferromagnetic tunnel junction device in a nonvolatile manner; and a control unit configured not to write data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when an output of the readout circuit is the same as the data to be written into the ferromagnetic tunnel junction device in a nonvolatile manner, and configured to write the data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when the output of the readout circuit is not the same as the data to be written in a nonvolatile manner.
[claim2]
2. The memory circuit according to claim 1, wherein the control unit determines whether the output of the readout circuit is the same as the data to be written into the ferromagnetic tunnel junction device in a nonvolatile manner, the control unit not writing the data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when determining that the output of the readout circuit is the same as the data to be written in a nonvolatile manner, the control unit writing the data to be written in a nonvolatile manner into the ferromagnetic tunnel junction device when determining that the output of the readout circuit is not the same as the data to be written in a nonvolatile manner.
[claim3]
3. The memory circuit according to claim 2, wherein, when receiving a skip signal, the control unit does not determine whether the output of the readout circuit is the same as the data to be written into the ferromagnetic tunnel junction device in a nonvolatile manner.
[claim4]
4. The memory circuit according to any of claims 1 through 3, wherein the readout circuit reads out the data that has already been properly written into the ferromagnetic tunnel junction device in the nonvolatile manner.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • YAMAMOTO SHUICHIRO
  • SHUTO YUSUKE
  • SUGAHARA SATOSHI
国際特許分類(IPC)
指定国 (EP3109863)
Contracting States: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
参考情報 (研究プロジェクト等) CREST Research of Innovative Material and Process for Creation of Next-generation Electronics Devices AREA
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