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SEMICONDUCTOR MATERIAL, METHOD FOR GENERATING CARRIER IN ELECTROCONDUCTIVE LAYER, THERMOELECTRIC CONVERSION ELEMENT, AND SWITCHING ELEMENT

外国特許コード F170009085
整理番号 (S2016-0053-N0)
掲載日 2017年5月30日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP080628
国際公開番号 WO 2017065306
国際出願日 平成28年10月14日(2016.10.14)
国際公開日 平成29年4月20日(2017.4.20)
優先権データ
  • 特願2015-205044 (2015.10.16) JP
発明の名称 (英語) SEMICONDUCTOR MATERIAL, METHOD FOR GENERATING CARRIER IN ELECTROCONDUCTIVE LAYER, THERMOELECTRIC CONVERSION ELEMENT, AND SWITCHING ELEMENT
発明の概要(英語) An embodiment of the present invention is a semiconductor material having a piezoelectric layer that contains a piezoelectric material, and an electroconductive layer that contains an electroconductive material and either is made to contact the piezoelectric layer or is provided with another layer interposed therebetween. The semiconductor material generates a carrier in the electroconductive layer using polarization generated by imparting external stimulation to the piezoelectric layer.
特許請求の範囲(英語) [claim1]
1. The piezoelectric layer which includes the piezoelectric material and,
The conductive layer where it includes the conductive material, makes the aforementioned piezoelectric layer contact and or through other layer, is provided and,
Possessing,
The semi-conducting material which the carrier occurs in the aforementioned conductive layer with the polarization which it occurs by the fact that external stimulus is granted to the aforementioned piezoelectric layer.
[claim2]
2. As for the aforementioned conductive material, the semiconductor or conductivity in the claim 1 which is high-molecular the semi-conducting material of statement.
[claim3]
3. The aforementioned semiconductor and as for the aforementioned conductive macromolecule, the thermoelectricity in the claim 2 which is the thermoelectric material which is converted the semi-conducting material of statement.
[claim4]
4. As for stimulus outside the description above, physical power, either of the claim 1- claim 3 which at least is one which is chosen from magnetic force, heat, voltage and light in 1 sections the semi-conducting material of statement.
[claim5]
5. As for the aforementioned piezoelectric material, either of the claim 1- claim 4 which at least is one which is chosen from the polyvinylidene fluoride resin, the poly- amino borane resin, the poly- cyanidation vinylidene resin, the [poriurea] resin, the poly- lactic acid resin, and the nylon resin in 1 sections the semi-conducting material of statement.
[claim6]
6. As for the aforementioned conductive material, either of the claim 1- claim 5 which is the poly- thiophene resin in 1 sections the semi-conducting material of statement.
[claim7]
7. As for the aforementioned conductive layer, in the claim 1 which is the black phosphorus atomic membrane the semi-conducting material of statement.
[claim8]
8. Either of claim 1- claim 7 the thermoelectric sensing element which possesses the semi-conducting material of statement in 1 sections.
[claim9]
9. Either of claim 1- claim 7 possessing at least in 1 sections the pair of the semi-conducting material of statement,
As for one side of the semi-conducting material of the aforementioned pair, it is the n type semiconductor which the electron occurs in the aforementioned conductive layer,
Another side of the semi-conducting material of the aforementioned pair is the p type semiconductor which the positive hole occurs in the aforementioned conductive layer, the thermoelectric sensing element.
[claim10]
10. The method of making the carrier the aforementioned conductive layer cause with the polarization where it includes piezoelectric layer and the conductive material including the piezoelectric material, makes the aforementioned piezoelectric layer contact and or through other layer, makes polarization cause, by granting external stimulus to the aforementioned piezoelectric layer the conductive layer which is provided and, vis-a-vis the semi-conducting material which it possesses, occurs.
[claim11]
11. As for the aforementioned conductive material, the semiconductor or conductivity in the claim 10 which is high-molecular method of statement.
[claim12]
12. The aforementioned semiconductor and as for the aforementioned conductive macromolecule, the thermoelectricity in the claim 11 which is the thermoelectric material which is converted method of statement.
[claim13]
13. As for stimulus outside the description above, physical power, either of the claim 10- claim 12 which at least is one which is chosen from magnetic force, heat, voltage and light in 1 sections method of statement.
[claim14]
14. As for the aforementioned piezoelectric material, either of the claim 10- claim 13 which at least is one which is chosen from the polyvinylidene fluoride resin, the poly- amino borane resin, the poly- cyanidation vinylidene resin, the [poriurea] resin, the poly- lactic acid resin, and the nylon resin in 1 sections method of statement.
[claim15]
15. As for the aforementioned conductive material, either of the claim 10- claim 14 which is the poly- thiophene resin either of 1 sections in 1 sections method of statement.
[claim16]
16. As for the aforementioned conductive layer, in the claim 10 which is the black phosphorus atomic membrane method of statement.
[claim17]
17. Either of claim 1- claim 7 the switching element which possesses the semi-conducting material of statement in 1 sections.
[claim18]
18. Either of claim 1- claim 7 in 1 sections semi-conducting material of statement and,
The gate electrode which is arranged on side of piezoelectric layer of the aforementioned semi-conducting material and,
The source electrode and the drain electrode which are connected to the conductive layer of the aforementioned semi-conducting material electrically and,
Possessing,
When impressing voltage in the aforementioned gate electrode, aforementioned drain electrode and aforementioned source electrode, through aforementioned conductive layer, the switching element which is connected electrically.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION
  • 発明者(英語)
  • YAMAMOTO TAKAHIRO
  • NAKAJIMA TAKASHI
  • ANNO HIROAKI
  • KONABE SATORU
国際特許分類(IPC)
指定国 (WO201765306)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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