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TERAHERTZ DETECTION SENSOR AND TERAHERTZ IMAGE MEASUREMENT DEVICE NEW

外国特許コード F170009110
整理番号 (S2016-0159-N0)
掲載日 2017年7月7日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP087196
国際公開番号 WO 2017104697
国際出願日 平成28年12月14日(2016.12.14)
国際公開日 平成29年6月22日(2017.6.22)
優先権データ
  • 特願2015-244218 (2015.12.15) JP
発明の名称 (英語) TERAHERTZ DETECTION SENSOR AND TERAHERTZ IMAGE MEASUREMENT DEVICE NEW
発明の概要(英語) A terahertz image measurement device (20) is provided with a terahertz detection sensor (13), a magnetic field generating unit (19), and a measurement control unit (20). The sensor (13) detects near-field terahertz light emitted from a sample (18). The magnetic field generating unit (19) has a coil (19a) on the periphery of the sample (18) and the sensor (13), the coil (19a) being wound so as to surround the optical axis of terahertz light radiated to the sensor (13) from the sample (18), and applies to the sensor (13) a magnetic field generated by flow of an electric current to the coil (19a). The measurement control unit (20) distributes an electric current to the coil (19a), changes the electric current value and sets the strength of the magnetic field to a magnetic field value whereby the detection signal level of the terahertz light of the sample detected by the sensor (13) increases prominently, and causes the magnetic field strength to conform to a specific frequency of the terahertz light.
特許請求の範囲(英語) [claim1]
1. In the terahertz detection sensor which detects terahertz light,
Being form of the size which is smaller than wave length of terahertz light, the detection point which detects the approach place light of the aforementioned terahertz light and,
The semiconductor baseplate where the aforementioned detection point was formed to the surface
The terahertz detection sensor which features that it has.
[claim2]
2. On the surface of the aforementioned semiconductor baseplate, through the 1st electrode and the particular 1st electrode in order to let flow electric current to the aforementioned detection point, the 2nd electrode which outputs the voltage which is detected when irradiating the aforementioned approach place light to the particular detection point where electric current is let flow, is formed
In the claim 1 which features thing the terahertz detection sensor of statement.
[claim3]
3. Each of the aforementioned 1st electrode and the aforementioned 2nd electrode, the point petering out needle-shaped, forms the belt shape which extends, including the electrode of 1 pair the particular needle-shaped point is connected to the aforementioned detection point, becomes
In the claim 1 which features thing the terahertz detection sensor of statement.
[claim4]
4. The aforementioned semiconductor baseplate is the high high election mobility transistor structure which 2 dimensional electron gas is distributed to the type of semiconductor which is laminated to the top and bottom and the boundary of the various semiconductor where structure differs,
It is the structure which 2 dimensional electron gas is distributed to the boundary of semiconductor layer and the semiconductor layer under this where the aforementioned detection point the description above semiconductor layer of the first layer which is laminated formed in form of the size which is smaller than wave length of the aforementioned terahertz light formed particularly
In the claim 1 which features thing the terahertz detection sensor of statement.
[claim5]
5. As for the aforementioned semiconductor baseplate, AlGaAs layer is laminated on GaAs layer, it is the high high election mobility transistor structure which 2 dimensional electron gas is distributed to the boundary of particular AlGaAs layer and particular GaAs layer,
It is the structure which 2 dimensional electron gas is distributed to the boundary of AlGaAs layer and the aforementioned GaAs layer where the aforementioned detection point the aforementioned AlGaAs layer formed in form of the size which is smaller than wave length of the aforementioned terahertz light formed particularly
In the claim 4 which features thing the terahertz detection sensor of statement.
[claim6]
6. The aforementioned detection point has in regard to the particular detection point needle-shaped the point becomes pointed or the metal in line and either of the semiconductors the probe by on the one hand uniting,
In the claim 4 which features thing the terahertz detection sensor of statement.
[claim7]
7. The aforementioned semiconductor baseplate is the structure which laminates the semiconductor where type differs to the top and bottom,
The aforementioned detection point the description above with respect to semiconductor layer of the first layer which is laminated, is gurahuen which is formed in form of the size which is smaller than wave length of the aforementioned terahertz light
In the claim 1 which features thing the terahertz detection sensor of statement.
[claim8]
8. The aforementioned semiconductor baseplate is the structure which laminates SiO2 layer with respect to Si layer,
The aforementioned detection point the description above SiO [2] with respect to layer, is gurahuen which is formed in form of the size which is smaller than wave length of the aforementioned terahertz light
In the claim 7 which features thing the terahertz detection sensor of statement.
[claim9]
9. The aforementioned detection point has in regard to the particular detection point needle-shaped the point becomes pointed or the probe by the carbon nano- tube in line uniting,
In the claim 7 which features thing the terahertz detection sensor of statement.
[claim10]
10. Each of the aforementioned 1st electrode and the aforementioned 2nd electrode, the point petering out needle-shaped, forms the belt shape which extends, includes the electrode of 1 pair it is connected to the aforementioned detection point to the particular needle-shaped point, as for the particular electrode, length above wave length of the terahertz wave, at the same time, receives the terahertz wave in the territory where electric field under wave length of the terahertz wave concentrates
In the claim 1 which features thing the terahertz detection sensor of statement.
[claim11]
11. In the claim 1 which detects the approach place light of the terahertz light which is given out from the sample or 2 the terahertz detection sensor of statement and,
Surrounding the optical axis of the terahertz light which from the aforementioned sample is irradiated to the aforementioned terahertz detection sensor, winding it is done, it possesses the particular sample and the coil which is arranged around the particular terahertz detection sensor, the magnetic field occurrence section which impresses the magnetic field where electric current is let flow by the particular coil and occurs to the particular terahertz detection sensor and,
The measurement control section where it lets flow electric current to the aforementioned coil, detection signal level of terahertz light of the aforementioned sample which is detected with the particular terahertz detection sensor extending the strength of the aforementioned magnetic field, this by changing the current value which flows it makes the magnetic field value which becomes high, makes the specific frequency of terahertz light align
The terahertz picture measurement equipment which features that it has.
[claim12]
12. The vibrating section which it vibrates to the interval direction of the aforementioned sample the aforementioned terahertz detection sensor which is locked in the plate shaped point which extends from the basic end, due to the voltage impression to the particular basic end and,
Through the gap with the aforementioned terahertz detection sensor and the aforementioned sample, in order the sample which aforementioned it is mounted is locked according to the voltage which it mounts locks the particular sample, detects the vibration of the aforementioned vibrating section, for the aforementioned gap to become fixed, the piezo baseplate which is made to move to particular gap direction
In the claim 11 which features that it has the terahertz picture measurement equipment of statement.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO INSTITUTE OF TECHNOLOGY
  • 発明者(英語)
  • KAWANO YUKIO
国際特許分類(IPC)
指定国 (WO2017104697)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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