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STRUCTURE IN WHICH SINGLE ATOMS ARE DISPERSED ON SUPPORT, METHOD FOR MANUFACTURING STRUCTURE IN WHICH SINGLE ATOMS ARE DISPERSED ON SUPPORT, AND SPUTTERING DEVICE

外国特許コード F170009155
整理番号 (S2016-0343-N0)
掲載日 2017年8月24日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP002670
国際公開番号 WO 2017135136
国際出願日 平成29年1月26日(2017.1.26)
国際公開日 平成29年8月10日(2017.8.10)
優先権データ
  • 特願2016-016872 (2016.2.1) JP
  • 特願2016-176829 (2016.9.9) JP
発明の名称 (英語) STRUCTURE IN WHICH SINGLE ATOMS ARE DISPERSED ON SUPPORT, METHOD FOR MANUFACTURING STRUCTURE IN WHICH SINGLE ATOMS ARE DISPERSED ON SUPPORT, AND SPUTTERING DEVICE
発明の概要(英語) The present invention relates to a structure in which single atoms are dispersed on a support. The structure comprises: a support on which an anchor site capable of adsorbing atoms which can be used in sputtering is formed; and the atoms which can be used in sputtering and which are adsorbed by the anchor site and dispersed as single atoms on the support. The structure enables atoms of more varied types to be dispersed as single atoms.
特許請求の範囲(英語) [claim1]
1. The atom whose sputtering is possible the backing where the adsorption possible anchor sight was formed and,
Being adsorbed by the aforementioned anchor sight, being monatomic on the aforementioned backing, it dispersed, the atom where the aforementioned sputtering is possible and, it includes,
The structure which monatomic disperses on the backing.
[claim2]
2. The aforementioned backing 1 where it consists of nanogurahuen or is the layered product which plural layers on gurahuen laminate in island condition,
The aforementioned anchor sight is the territory where it touches with the end of the layer which consists of aforementioned nanogurahuen which was formed on gurahuen or among the surfaces of the layer which consists of nanogurahuen and on that,
In claim 1 structure of statement.
[claim3]
3. The aforementioned backing is the active carbon, in claim 1 or 2 the structure of statement.
[claim4]
4. 90% or more of the aforementioned atom being monatomic, it is the dispersing element which is dispersed, either of the claim 1-3 in 1 sections the structure of statement.
[claim5]
5. The atom where the aforementioned sputtering is possible is the atom of the transition metal, either of the claim 1-4 in 1 sections the structure of statement.
[claim6]
6. The atom where the aforementioned sputtering is possible is, the platinum (Pt), the gold (Au), iridium (Ir) or ruthenium (Ru), either of the claim 1-5 in 1 sections the structure of statement.
[claim7]
7. The backing where the adsorption possible anchor sight was formed and, is arranged the atom where the target and the sputtering which include the atom whose sputtering is possible are possible, at the same time, inside the chamber where the spatter gas is introduced,
It was required beforehand, at least portion of the atom where the aforementioned sputtering is possible being monatomic, under the sputtering conditions being possible to make disperse on the aforementioned backing, impressing voltage with the aforementioned target and the aforementioned backing, it includes the process which the target spatter is done, the method of producing the structure which monatomic disperses on the backing.
[claim8]
8. The aforementioned backing 1 where it consists of nanogurahuen or is the backing which plural layers on gurahuen laminate in island condition,
The aforementioned anchor sight is the territory where it touches with the end of the layer which consists of aforementioned nanogurahuen which was formed on gurahuen or among the surfaces of the layer which consists of nanogurahuen and on that,
In claim 7 method of statement.
[claim9]
9. The aforementioned backing is the active carbon, in claim 7 or 8 method of statement.
[claim10]
10. The aforementioned voltage is below 150V, either of the claim 7-9 in 1 sections method of statement.
[claim11]
11. The aforementioned voltage is impressed 1.5 seconds less than, either of the claim 7-10 in 1 sections method of statement.
[claim12]
12. The aforementioned spatter gas 70 volume % the nitrogen above (N [2]) is the gas which is included, either of the claim 7-11 in 1 sections method of statement.
[claim13]
13. The aforementioned target includes the transition metal, either of the claim 7-12 in 1 sections method of statement.
[claim14]
14. The aforementioned target is, the platinum (Pt), the gold (Au), iridium (Ir) or ruthenium (Ru), either of the claim 7-13 in 1 sections method of statement.
[claim15]
15. Furthermore, before the process which the aforementioned target spatter is done,
The process which consecutively sends out the copper foil which is wound in the delivery roller and,
It includes with the process which forming a membrane, designates gurahuen as the aforementioned backing on the aforementioned copper foil chemical vapor phase vapor deposition method (CVD) with,
Either of claim 7-14 in 1 sections method of statement.
[claim16]
16. Airtightness possible chamber and,
It was provided inside the aforementioned chamber, the target arrangement section where the target which includes the atom whose sputtering is possible is arranged and,
It was provided inside the aforementioned chamber, the atom whose sputtering is possible the backing arrangement section where the backing where the adsorption possible anchor sight was formed is arranged and,
The spatter gas introduction section which introduces the spatter gas into the aforementioned chamber and,
Voltage is impressed with the aforementioned target and the aforementioned backing, the voltage impression section and,
Controlling the aforementioned spatter gas introduction section and the voltage impression section, it was required beforehand, under the sputtering conditions being possible being monatomic, to make the portion of the atom disperse where at least the aforementioned sputtering is possible on the aforementioned backing, it makes voltage impress with the aforementioned target and the aforementioned backing, the control section and,
The spatter device which it has.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • HOKKAIDO UNIVERSITY
  • 発明者(英語)
  • GOHARA KAZUTOSHI
  • MAEHARA YOSUKE
  • YAMAZAKI KENJI
国際特許分類(IPC)
指定国 (WO2017135136)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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