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Thin film transistor and method for manufacturing thin film transistor NEW

外国特許コード F170009220
整理番号 E086P50US1
掲載日 2017年9月13日
出願国 アメリカ合衆国
出願番号 201615352560
公報番号 20170133517
出願日 平成28年11月15日(2016.11.15)
公報発行日 平成29年5月11日(2017.5.11)
国際出願番号 JP2013057621
国際公開番号 WO2013141197
国際出願日 平成25年3月18日(2013.3.18)
国際公開日 平成25年9月26日(2013.9.26)
優先権データ
  • 特願2012-068133 (2012.3.23) JP
  • 2013WO-JP57621 (2013.3.18) WO
  • 2014US-14386811 (2014.9.21) US
発明の名称 (英語) Thin film transistor and method for manufacturing thin film transistor NEW
発明の概要(英語) (US20170133517)
A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities, this applies to oxide hereinafter) containing lanthanum and zirconium.
The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.
特許請求の範囲(英語) [claim1]

1-14. (canceled)
[claim2]
15. A thin film transistor comprising a gate electrode, a channel, and a gate insulating layer provided between the gate electrode and the channel and made of oxide (possibly including inevitable impurities) containing lanthanum (La) and zirconium (Zr); wherein the channel is made of
fourth oxide (possibly including inevitable impurities) containing indium (In), zinc (Zn), and tin (Sn), or fifth oxide (possibly including inevitable impurities) containing indium (In) and zinc (Zn).
[claim3]
16. The thin film transistor according to claim 15, wherein the zinc (Zn) in the fourth oxide has atomicity of 0.15 or more and 0.75 or less relative to atomicity of the indium assumed to be 1, and
the tin (Sn) has atomicity of 0.5 or more and 2 or less relative to atomicity of the indium assumed to be 1.
17-22. (canceled)
  • 発明者/出願人(英語)
  • SHIMODA TATSUYA
  • INOUE SATOSHI
  • PHAN TUE TRONG
  • MIYASAKO TAKAAKI
  • LI JINWANG
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO SHIMODA Nano-Liquid Process AREA
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