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Thin film transistor and method for manufacturing thin film transistor

Foreign code F170009220
File No. E086P50US1
Posted date Sep 13, 2017
Country United States of America
Application number 201615352560
Gazette No. 20170133517
Date of filing Nov 15, 2016
Gazette Date May 11, 2017
International application number JP2013057621
International publication number WO2013141197
Date of international filing Mar 18, 2013
Date of international publication Sep 26, 2013
Priority data
  • P2012-068133 (Mar 23, 2012) JP
  • 2013WO-JP57621 (Mar 18, 2013) WO
  • 2014US-14386811 (Sep 21, 2014) US
Title Thin film transistor and method for manufacturing thin film transistor
Abstract (US20170133517)
A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities, this applies to oxide hereinafter) containing lanthanum and zirconium.
The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.
Scope of claims [claim1]

1-14. (canceled)
[claim2]
15. A thin film transistor comprising a gate electrode, a channel, and a gate insulating layer provided between the gate electrode and the channel and made of oxide (possibly including inevitable impurities) containing lanthanum (La) and zirconium (Zr); wherein the channel is made of
fourth oxide (possibly including inevitable impurities) containing indium (In), zinc (Zn), and tin (Sn), or fifth oxide (possibly including inevitable impurities) containing indium (In) and zinc (Zn).
[claim3]
16. The thin film transistor according to claim 15, wherein the zinc (Zn) in the fourth oxide has atomicity of 0.15 or more and 0.75 or less relative to atomicity of the indium assumed to be 1, and
the tin (Sn) has atomicity of 0.5 or more and 2 or less relative to atomicity of the indium assumed to be 1.
17-22. (canceled)
  • Inventor, and Inventor/Applicant
  • SHIMODA TATSUYA
  • INOUE SATOSHI
  • PHAN TUE TRONG
  • MIYASAKO TAKAAKI
  • LI JINWANG
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
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