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Tunnel field effect transistor

Foreign code F170009227
File No. K10103TW
Posted date Sep 14, 2017
Country Taiwan
Application number 105131272
Gazette No. 201712870
Date of filing Sep 29, 2016
Gazette Date Apr 1, 2017
Priority data
  • P2015-193196 (Sep 30, 2015) JP
Title Tunnel field effect transistor
Abstract (TW201712870)
The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.
Scope of claims [claim1]
1. Kinds pass the Buddhist temple effect transistor, it includes: Channel; The source electrode, directly or connects indirectly in states a channel's end; Draws the electrode, directly or connects indirectly in states another end of channel; As well as the floodgate electrode, causes the electric field to state the channel display function, but in stated the channel stated the source electrode side main forces to have the channel phenomenon, and simultaneously in stated in the channel to produce the two-dimensional electron gas.
[claim2]
2. Passing Buddhist temple effect transistor that according to claim 1, item of institute stated that it included: The foundation plate, has (111), was doped the 1st electric conduction and contains IV race semiconductors; The insulation membrane, the gable stated foundation plate (111), and had the oral area; Nucleus - multi-shell Nanowire, disposes in states states (111) that of foundation plate in the oral area reveals and stated oral area's surroundings states on the insulation membrane, and contained the III-V race chemical compound semiconductor; Stated source electrode and stated draws the electrode one, connected in states on the foundation plate; Stated source electrode and stated draws the electrode another one, connected in states nucleus - on multi-shell Nanowire; Floodgate insulation membrane, disposes extremely in states nucleus - multi-shell Nanowire's side; As well as stated the floodgate electrode, disposed in states on the floodgate extremely insulation membrane, and caused the electric field to state nucleus - at least one part of displays of multi-shell Nanowire affected; And stated nucleus - multi-shell Nanowire included: As stated channel's central Nanowire, included the connection to state states foundation plate that in the oral area revealed the (111) on 1st region, and connection in states the 1st region, and was doped with state the 1st electric conduction different 2nd electric conduction 2nd region, and contained the III-V race chemical compound semiconductor; The movie screen level, contains its band gap to state the central Nanowire's III-V race chemical compound semiconductor big III-V race chemical compound semiconductor compared to the constitution, and gable stated the central Nanowire's side; The accent changes doping level, contains its band gap in a big way to state the central Nanowire's III-V race chemical compound semiconductor compared to the constitution, and stated the movie screen level the III-V race chemical compound semiconductor to state the 2nd electric conduction III-V race chemical compound semiconductor compared to the constitution slightly, and gable stated the movie screen level; As well as the overburden layer, contains its band gap to state the central Nanowire's III-V race chemical compound semiconductor's band gap above III-V race chemical compound semiconductor for the constitution, and gable stated the accent changes the doping level; And stated the 1st region, or compared to states the 2nd region's impurity density for the intrinsic semiconductor low and is doped to state the 2nd electric conduction, states the movie screen level and stated the overburden layer respectively, or compared to states the accent be the intrinsic semiconductor changes the doping level the impurity density low and is doped to state the 2nd electric conduction, states the source electrode and drew another connection of electrode in stated the central Nanowire to state the 2nd region, states the floodgate electrode to cause the electric field to stated the foundation plate (111) with state the central Nanowire's joint contact surface, and states the central NanowireStated the 1st region to play role, but in stated the joint contact surface to have the channel phenomenon, and simultaneously in stated in the 1st region to produce the two-dimensional electron gas.
[claim3]
3. Passing Buddhist temple effect transistor that according to claim 2, item of institute stated that stated nucleus - multi-shell Nanowire included: The 1st divider level, disposes between states the movie screen level and states the accent changes the doping levels, and contains the composition and constitution states the accent changes the doping level the III-V race chemical compound semiconductor same III-V race chemical compound semiconductor; As well as the 2nd divider level, disposes between states the accent changes the doping level and states the overburden layers, and contains the composition and constitution states the accent changes the doping level and states the 1st divider level the III-V race chemical compound semiconductor same III-V race chemical compound semiconductor; Stated the 1st divider level and states the 2nd divider level the band gap in a big way to state the central Nanowire's III-V race chemical compound semiconductor's band gap the constitution, and stated the movie screen level the III-V race chemical compound semiconductor's band gap to be smaller than the constitution.
[claim4]
4. Passing Buddhist temple effect transistor that according to claim 2, item or the 3rd item of institute stated that stated the accent changes the doping level the impurity density is in 10 17 cm -3 ~10 21 cm -3 scopes.
[claim5]
5. 1 kinds on-off elements, it including according to claim 1, item the 4th item of any item of institute to the passing Buddhist temple effect transistor that stated.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • FUKUI TAKASHI
  • TOMIOKA KATSUHIRO
IPC(International Patent Classification)
Reference ( R and D project ) PRESTO Phase Interfaces for Highly Efficient Energy Utilization AREA
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