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Manufacturing method of electrode structure with nanogap length, electrode structure with nanogap length and nano-device obtained through manufacturing method

Foreign code F170009229
File No. AF12-08CN2
Posted date Sep 14, 2017
Country China
Application number 201610573266
Gazette No. 106206685
Date of filing Feb 28, 2012
Gazette Date Dec 7, 2016
International application number JP2012055002
International publication number WO2012121067
Date of international filing Feb 28, 2012
Date of international publication Sep 13, 2012
Priority data
  • P2011-050894 (Mar 8, 2011) JP
  • 2012CN-80012185 (Feb 28, 2012) CN
Title Manufacturing method of electrode structure with nanogap length, electrode structure with nanogap length and nano-device obtained through manufacturing method
Abstract (CN106206685)
A substrate (1) on which metal layers (2A and 2B) are arranged in pairs at an interval is immersed into an electroless plating solution, wherein the electroless plating solution is prepared by mixing a reducing agent and an interfacial agent into an electrolyte containing metal ions; the metal ions are reduced through the reducing agent; metal is separated out of the metal layers (2A and 2B) and the interfacial agent is attached to the surface of the metal to form an electrode (4A and 4B) pair of controlling the gap length into the nanoscale.
Therefore, a manufacturing method of an electrode structure which can control a gap length deviation and has a nanogap length is provided.
Furthermore, the electrode structure with the nanogap length capable of inhibiting the gap length deviation and a nano-device with the electrode structure are provided by employing the manufacturing method.
Scope of claims [claim1]
1. A nano-device, characterized in, including:
The nano-gaps are arranged so as to have one of the electrode and the other one of the electrodes; the one electrode and another electrode which is disposed between the metal nanoparticles; and the one electrode and another electrode of the at least one set of the monomolecular film.
[claim2]
2. A nano-device according to claim 1, characterized in: a monomolecular film is a self-assembled monolayer.
[claim3]
3. A nano-device according to claim 1, characterized in: a monomolecular film on the metal nanoparticles are chemically attracted.
[claim4]
4. A nano-device according to claim 1, characterized in: the metal nanoparticles by a protecting group consisting of a single molecule monolayer to an alkylthiol of a defective part of chemical bonding, metal nanoparticles and the other electrode with the insulating one electrode.
[claim5]
5. A nano-device according to claim 1, characterized in: one electrode and another electrode on the same surface, the side gate electrode is 1 or more is arranged on the surface.
[claim6]
6. A nano-device according to claim 1, characterized in: further comprising a passivation film.
[claim7]
7. A nano-device, characterized in, including:
The nano-gaps are arranged so as to have one of the electrode and the other one of the electrodes;
The one electrode and another electrode which is disposed between the metal nanoparticles; and
Between the one electrode is interposed between the metal nanoparticles, metal nanoparticles and the other electrode of the single-molecule film,
Metal nano-particles are adsorbed to the through electrode and the other one of the thiol one of the at least one of the electrodes.
[claim8]
8. A nano-device according to claim 7, characterized in: a monomolecular film containing an alkyl thiol.
[claim9]
9. A nano-device according to claim 7, characterized in: a monomolecular film is a self-assembled monolayer.
[claim10]
10. A nano-device according to claim 7, characterized in: as the metal of the nanoparticles of the protecting group through which the cutout portion of the monomolecular film with a single molecule of the alkyl thiol the chemical bonding, metal nano-particles and the one electrode, the other electrode of the at least one insulation.
[claim11]
11. A nano-device according to claim 7, characterized in: one electrode and another electrode on the same surface, the side gate electrode is 1 or more is arranged on the surface.
[claim12]
12. A nano-device according to claim 7, characterized in: further comprising a passivation film.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • MAJIMA YUTAKA
  • TERANISHI TOSHIHARU
  • MURAKI TARO
  • TANAKA DAISUKE
IPC(International Patent Classification)
Reference ( R and D project ) CREST Establishment of Innovative Manufacturing Technology Based on Nanoscience AREA
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