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Thermal-radiation light source and two-dimensional photonic crystal used therein UPDATE

外国特許コード F170009232
整理番号 J1017-15WO
掲載日 2017年9月14日
出願国 中華人民共和国
出願番号 201580011021
公報番号 106471687
出願日 平成27年2月24日(2015.2.24)
公報発行日 平成29年3月1日(2017.3.1)
国際出願番号 JP2015055161
国際公開番号 WO2015129668
国際出願日 平成27年2月24日(2015.2.24)
国際公開日 平成27年9月3日(2015.9.3)
優先権データ
  • 特願2014-039298 (2014.2.28) JP
  • 2015WO-JP55161 (2015.2.24) WO
発明の名称 (英語) Thermal-radiation light source and two-dimensional photonic crystal used therein UPDATE
発明の概要(英語) (CN106471687)
This invention provides a thermal-radiation light source that allows light-intensity changes with a response speed on par with photoelectric conversion elements.
Said thermal-radiation light source (10) is provided with a two-dimensional photonic crystal (12) in which an n layer (112) comprising an n-type semiconductor, a quantum-well-structure layer (114) that has a quantum-well structure, and a p layer (111) comprising a p-type semiconductor are stacked in that order to form a plate (11) inside which different-refractive-index regions (holes (121)), each of which has a refractive index that is different from those of the n layer (112), the p layer (111), and the quantum-well-structure layer (114), are laid out in a periodic manner so as to resonate with light of a specific wavelength corresponding to the transition energy between subbands in the quantum wells in the quantum-well-structure layer (114).
This thermal-radiation light source (10) is also provided with a p-type electrode (131) and an n-type electrode (132) for applying, to the abovementioned plate (11), a voltage that is negative on the side corresponding to the p layer (111) and positive on the side corresponding to the n layer (112).
特許請求の範囲(英語) [claim1]
1. A thermal radiation light source, characterized in, is provided with:
A) a two-dimensional photonic crystal, n-type semiconductor formed by n in the layer, a quantum well structure having quantum well structure and p-type semiconductor layer is formed of a p layer in this Order along with the thickness direction within the sheet is formed by laminating, on a periodic basis and the refractive index n layer is disposed, and a quantum well structure layer having a refractive index different from that of p layer modified refractive index region, the quantum well structure with quantum well layers is such that the sub bands in the transition energy of particular wavelengths of light corresponding to between resonate; and
B) electrode, which is negative and n p is applied to the sheet material used for layer-a voltage positive layer side.
[claim2]
2. Thermal radiation light source according to claim 1, characterized in,
A layer of n-type quantum well structure having quantum wells, quantum well structure layer and the p layer in the formed of an insulator is provided between the i layer.
[claim3]
3. Thermal radiation light source according to claim 1, characterized in,
Having a p-type quantum well structure layer quantum wells, quantum well structure in which the n layer formed of an insulator layer and the i layer is provided between.
[claim4]
4. Claim 1-3 according to any one of the heat radiation source, characterized in,
Has the two-dimensional photonic crystal (1/(2 π RC) ) is equal to or larger than the resistance of R and the capacitance C target frequency.
[claim5]
5. Claim 1-4 according to any one of the heat radiation source, characterized in,
Of the p-layer and n layers, the effective mass of carriers having a larger effective mass of carriers in the carrier density than a smaller one of the high carrier density.
[claim6]
6. Claim 1-5 according to any one of the heat radiation source, characterized in,
Of the p electrode and n electrode are made of metallic electrodes made of metal, p electrode and the p contact layer that, of the p-type semiconductor layer forming the p ohmic connection is formed between, said n electrode and the n contact layer, n n-type semiconductor layer forming the connection of the ohmic.
[claim7]
7. Claim 1-6 according to any one of the heat radiation source, characterized in,
At least one of the surfaces of the plate electrode surface so as to surround periodically provided with modified refractive index area is provided so that mounting region.
[claim8]
8. Claim 1-7 according to any one of the heat radiation source, characterized in,
Further comprising an electric power to heat the heating unit through a two-dimensional photonic crystal.
[claim9]
9. A two-dimensional photonic crystal, the heat radiating light source is used, the two-dimensional photonic crystal is characterized by, comprising:
Sheets, the sheets are formed of n-type semiconductor layer by the n, p and quantum well structure having quantum well structure formed of a p-type semiconductor layer by the thickness of the layer is formed by laminating in this Order along direction; and
The modified refractive index region, the refractive index of the modified refractive index region and the n-layer, p layer and a quantum well structure layer having a refractive index different, the modified refractive index areas periodically arranged within the panel, with the quantum well layer in a quantum well structure such that the sub bands in particular wavelengths of light between the transition energy corresponding to resonate.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • NODA SUSUMU
  • INOUE TAKUYA
  • ASANO TAKASHI
  • DE ZOYSA MENAKA
国際特許分類(IPC)
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