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SOLAR CELL NEW_EN

Foreign code F170009248
File No. (FPV003)
Posted date Oct 4, 2017
Country WIPO
International application number 2017JP006995
International publication number WO 2017159281
Date of international filing Feb 24, 2017
Date of international publication Sep 21, 2017
Priority data
  • P2016-052540 (Mar 16, 2016) JP
Title SOLAR CELL NEW_EN
Abstract The present invention provides a solar cell in which a photogenerated carrier, when being dispersed in a superlattice structure comprising a crystalline Si-layer/SiO2 layer, does not need to traverse a high energy barrier of the SiO2 layer, thereby relaxing constraints regarding the thickness of the SiO2 layer and significantly suppressing loss of the carrier during dispersal, and making it possible to obtain a solar cell having increased internal quantum efficiency and high photoelectric conversion efficiency. Because junctions (pi-junction and ni-junction) are formed in a lateral direction, the need to use a substrate containing an impurity dopant is eliminated, and it becomes possible to avoid the problem of unintended irreversible dispersion of a dopant from the substrate as a result of annealing at relatively high temperature for Si-layer crystallization, making it possible to perform contact formation substantially in accordance with the design thereof.
Scope of claims [claim1]
1. The surface on the insulated baseplate, crystal characteristic Si layer and SiO [2] layer alternately plural having the structure division which possesses the superlattice body which is laminated,
The aforementioned crystal characteristic Si layer is intrinsic semiconductor layer substantially,
The 1st side of the aforementioned superlattice body as crystal characteristic Si layer and SiO of p type [2] layer alternately plural makes the p type superlattice which is laminated, the 2nd side which opposes to the aforementioned 1st side crystal characteristic Si layer and SiO of n type [2] layer alternately plural is made the n type superlattice which is laminated,
As crystal characteristic Si layer and the aforementioned true characteristic crystal characteristic Si layer of the aforementioned p type connect pi, crystal characteristic Si layer and the aforementioned true characteristic crystal characteristic Si layer of the aforementioned n type have connected ni,
The solar array which features thing.
[claim2]
2. On the aforementioned baseplate, the aforementioned superlattice body alienating mutually, plural it is formed, in claim 1 the solar array of statement.
[claim3]
3. The superlattice body which the aforementioned plural superlattice bodies adjoin is arranged, as the aforementioned p type superlattice opposes, the aforementioned n type superlattice opposing, in claim 2 the solar array of statement.
[claim4]
4. The superlattice body which the aforementioned plural superlattice bodies adjoin is arranged, the aforementioned p type superlattice and the aforementioned n type superlattice opposing, in claim 2 the solar array of statement.
[claim5]
5. In the territory where the aforementioned superlattice body alienates mutually, the p type electrode or the n type electrode are formed, in claim 2 the solar array of statement.
[claim6]
6. The aforementioned superlattice body has had the mesa form which possesses inclination on the side where the aforementioned p type superlattice and the aforementioned n type superlattice are formed, either of the claim 1-5 in 1 sections the solar array of statement.
[claim7]
7. The accepter in crystal characteristic Si layer of the aforementioned p type and the donor in crystal characteristic Si layer of the aforementioned n type the ion are the impurity which was filled, either of the claim 1-5 in 1 sections the solar array of statement.
[claim8]
8. Thickness of the aforementioned crystal characteristic Si layer is below 5nm, either of the claim 1-5 in 1 sections the solar array of statement.
[claim9]
9. The aforementioned baseplate is the translucent baseplate, either of the claim 1-5 in 1 sections the solar array of statement.
[claim10]
10. SiO which forms the aforementioned superlattice body [2] thickness of layer about light absorbent side is thick, either of the claim 1-5 in 1 sections the solar array of statement.
[claim11]
11. Distance of the aforementioned 1st side and the aforementioned 2nd side of the aforementioned superlattice body is 10 .micro.m or less, either of the claim 1-5 in 1 sections the solar array of statement.
[claim12]
12. The open part is provided in the central territory of the aforementioned superlattice body, either of the claim 1-5 in 1 sections the solar array of statement.
[claim13]
13. The electrode pattern which connects the p type electrode and the n type electrode which were formed to the territory where the aforementioned superlattice body alienates mutually in series is had, in claim 5 the solar array of statement.
[claim14]
14. The electrode pattern which connects the p type electrode and the n type electrode which were formed to the territory where the aforementioned superlattice body alienates mutually in parallel is had, in claim 5 the solar array of statement.
[claim15]
15. The top cell which is provided on optical incident side being the solar array of the tandem type where the bottom cell which is provided in the lower part of the said top cell is laminated,
As for the aforementioned top cell either of claim 1-5 in 1 sections having structure division of statement,
The aforementioned bottom cell consists of crystal characteristic Si,
On the surface of the aforementioned top cell the light absorbent surface electrode, the back electrode is provided on back of the aforementioned bottom cell,
The solar array which features thing.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • YAMADA SHIGERU
  • ICHIKAWA YUKIMI
  • HIRAI MASAKAZU
  • YOSHIBA SHUHEI
  • YASHIKI YASUTOSHI
IPC(International Patent Classification)
Specified countries (WO2017159281)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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