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METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

外国特許コード F170009253
整理番号 KG0146-WO01
掲載日 2017年10月18日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2016JP004832
国際公開番号 WO 2017081862
国際出願日 平成28年11月8日(2016.11.8)
国際公開日 平成29年5月18日(2017.5.18)
優先権データ
  • 特願2015-220064 (2015.11.10) JP
発明の名称 (英語) METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER
発明の概要(英語) In a first step, projections (42) are formed on the surface of an SiC substrate (40), and the SiC substrate (40) is etched. In a second step, at least a portion of an epitaxial layer (43a) is removed, the epitaxial layer (43a) including screw dislocations grown to a large size in a perpendicular (c-axis) direction by epitaxial growth of the projections (42) of the SiC substrate (40) by an MSE method. In a third step, the MSE method is again performed on the SiC substrate (40) for which the second step was performed, whereby epitaxial layers (43) not including screw dislocations are grown in a horizontal (a-axis) direction and thereby connected at a molecular level, and a single large-area single-crystal 4H-SiC semiconductor wafer (45) is generated on the entire Si face or C face of the SiC substrate (40).
特許請求の範囲(英語) [claim1]
1. As the convex section is formed on the surface of the SiC baseplate, the 1st process which etches the particular SiC baseplate by the fact that the particular SiC baseplate is heated under Si vapor pressure and,
The aforementioned 1st process while arranging the carbon supply component on the aforementioned convex section side of the aforementioned SiC baseplate which does, at that time lying between the Si molten liquid, epitaxial growing the aforementioned convex section of the aforementioned SiC baseplate by the fact that it heats with metastability solvent epitaxy method, the 2nd process which removes at least the portion of the epitaxial layer where it forms epitaxial layer, by the fact that particular epitaxial growth is done, the epitaxial layer which includes screw dislocation the vertical (c axis) grows screw dislocation to direction more largely, than the epitaxial layer which is not included after that includes particular screw dislocation and,
The aforementioned 2nd process by the fact that again the aforementioned metastability solvent epitaxy method is done in the aforementioned SiC baseplate which does, screw dislocation the epitaxial layer which is not included the horizontal (a axis) by the fact that it grows in direction connects mutually at molecular level, it is the surface of the aforementioned SiC baseplate, the Si aspect (0001 aspects) or C aspect (000-1 the surface) the 3rd process where the semiconductor wafer of monocrystal 4H-SiC of one large area is formed at least and,
Production method of the semiconductor wafer which features that it includes.
[claim2]
2. Being production method of the semiconductor wafer of statement in claim 1,
The aforementioned SiC baseplate off angle is the 0.deg. or 0.deg. vicinity, with the aforementioned metastability solvent epitaxy method which is used with the aforementioned 2nd process and the aforementioned 3rd process, as 3C-SiC of polycrystals is used as the aforementioned carbon supply component, heating temperature is designated as below the 2000.deg.C above the 1600.deg.C, the pressure of Si 10 (- 5) production method of the semiconductor wafer which features that it is above Torr.
[claim3]
3. Being production method of the semiconductor wafer of statement in claim 1,
In the aforementioned 2nd process and the aforementioned 3rd process, with the aforementioned metastability solvent epitaxy method, C aspect of the aforementioned SiC baseplate (000-1 the surface) production method of the semiconductor wafer which features that epitaxial layer is formed.
[claim4]
4. Being production method of the semiconductor wafer of statement in claim 1,
In the aforementioned 2nd process and the aforementioned 3rd process, with the aforementioned metastability solvent epitaxy method, the Si aspect of the aforementioned SiC baseplate (0001 aspects) production method of the semiconductor wafer which features that epitaxial layer is formed.
[claim5]
5. Being production method of the semiconductor wafer of statement in claim 1,
With the aforementioned 1st process, by the fact that the plural grooves which irradiate the laser to the aforementioned SiC baseplate and cross mutually are formed, the convex section is formed in the particular SiC baseplate,
With the aforementioned 2nd process, irradiating the laser to the epitaxial layer which includes the aforementioned screw dislocation, production method of the semiconductor wafer which features that it removes particular epitaxial layer.
[claim6]
6. Being production method of the semiconductor wafer of statement in claim 5,
As for the aforementioned convex section, the surface is rectangular condition,
The vertical (c axis) of the aforementioned convex section length of direction is 20 .micro.m-40 .micro.m,
The horizontal (a axis) of the surface of the aforementioned convex section length of one side of direction is 50 .micro.m-100 .micro.m,
Production method of the semiconductor wafer which features that the interval where the aforementioned convex section which is adjacent is formed is 400 .micro.m-1000 .micro.m.
[claim7]
7. Being production method of the semiconductor wafer of statement in claim 5,
With the aforementioned 2nd process, the vertical (c axis) of the epitaxial layer which includes screw dislocation length of direction, screw dislocation the vertical (c axis) of the epitaxial layer which is not included production method of the semiconductor wafer which features that they are 2 times that or more length of direction.
[claim8]
8. Being production method of the semiconductor wafer of statement in claim 7,
With the aforementioned 2nd process,
The vertical (c axis) of the epitaxial layer which grew from the aforementioned convex section which includes screw dislocation length of direction is approximately 250 .micro.m, the horizontal (a axis) length of direction is approximately 400 .micro.m,
Screw dislocation the vertical (c axis) of the epitaxial layer which grew from the aforementioned convex section which is not included length of direction is approximately 100 .micro.m, the horizontal (a axis) production method of the semiconductor wafer which features that length of direction is approximately 400 .micro.m.
[claim9]
9. Being production method of the semiconductor wafer of statement in claim 1,
With the aforementioned 3rd process, screw dislocation the epitaxial layer which is not included the horizontal (a axis) in direction 4mm production method of the semiconductor wafer which features that the aforementioned metastability solvent epitaxy method is done under the conditions where it can grow.
[claim10]
10. Being production method of the semiconductor wafer of statement in claim 1,
When the aforementioned SiC baseplate seeing with the direction which is vertical to <1-100> direction and <11-20> direction, in order for the hypothetical line which connects the center of the aforementioned convex section which it adjoins to become regular triangle, production method of the semiconductor wafer which features that the aforementioned convex section is formed.
[claim11]
11. Being production method of the semiconductor wafer of statement in claim 1,
With the aforementioned 2nd process and the aforementioned 3rd process, in order for apex of hexagonal form of epitaxial layer to contact, production method of the semiconductor wafer which features that the aforementioned metastability solvent epitaxy method is done.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KWANSEI GAKUIN
  • 発明者(英語)
  • KANEKO TADAAKI
  • KUTSUMA YASUNORI
  • ASHIDA KOJI
国際特許分類(IPC)
指定国 (WO201781862)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS KE KG KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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