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SPIN-POLARIZED HIGH BRIGHTNESS ELECTRON GENERATING PHOTOCATHODE AND METHOD FOR MANUFACTURING FOR SAME NEW

外国特許コード F170009279
整理番号 (S2016-0566-N0)
掲載日 2017年11月7日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP013496
国際公開番号 WO 2017179440
国際出願日 平成29年3月30日(2017.3.30)
国際公開日 平成29年10月19日(2017.10.19)
優先権データ
  • 特願2016-081955 (2016.4.15) JP
発明の名称 (英語) SPIN-POLARIZED HIGH BRIGHTNESS ELECTRON GENERATING PHOTOCATHODE AND METHOD FOR MANUFACTURING FOR SAME NEW
発明の概要(英語) [Problem] The objective of the present invention is to provide a spin-polarized high brightness electron generating photocathode for backside illumination which has a simple construction, and to provide a method for manufacturing the same. [Solution] A thin film of a single-crystal compound semiconductor having negative electron affinity (NEA) is caused to form on a single-crystal substrate having nanometer surface flatness. This spin-polarized high brightness electron generating photocathode can be manufactured by metal-organic vapor phase epitaxy.
特許請求の範囲(英語) [claim1]
1. It possessed the even pure surface of nano- meter level and from 1.5eV is the range of 10eV possess the band gap which on the monocrystal baseplate and the said baseplate which epitaxial it grew, vis-a-vis the said baseplate, is chosen from one, 0.15eV which is the range of 6.5eV when the band gap which possesses the possessing and NEA characteristic the thin film of the monocrystal compound semiconductor which and, consists of being the spin polarization high brightness electronic occurrence photo cathode which, in the base of the aforementioned monocrystal baseplate from 1.5eV is the range of 10eV the light which incidence makes, from the thin film of the aforementioned monocrystal compound semiconductor electronic beam brightness 10 (7) Acm (- 2) sr (- 1) Or the spin polarization high brightness electronic occurrence photo cathode which features that the electronic beam above that occurs.
[claim2]
2. It possessed the even pure surface of nano- meter level and epitaxial it grew on the monocrystal baseplate and the said baseplate which possess the band gap which from 1.5eV is the range of 10eV, it possesses the band gap which from one, 0.15eV which is chosen vis-a-vis the said baseplate is the range of 6.5eV NEA characteristic and the thin film of the monocrystal compound semiconductor which possesses spin polarization electronic developmental potency and, it is the spin polarization high brightness electronic occurrence photo cathode which consists of, when the light which in the base of the aforementioned monocrystal baseplate from 1.5eV is the range of 10eV makes incidence, when the polarized light laser which in the base of the aforementioned monocrystal baseplate from 1.5eV is the range of 10eV makes incidenceFrom the thin film of the aforementioned monocrystal compound semiconductor electronic beam brightness 10 (7) Acm (- 2) sr (- 1) or above that, at the same time, spin degree of polarization 90% or more or the spin polarization high brightness electronic occurrence photo cathode which features that the electronic beam above that occurs.
[claim3]
3. The aforementioned monocrystal compound semiconductor is the monocrystal compound semiconductor of GaAs type, in the claim 1 which features that the aforementioned monocrystal baseplate is ZnS or ZnTe or 2 the spin polarization high brightness electronic occurrence photo cathode of statement.
[claim4]
4. The aforementioned monocrystal compound semiconductor is the monocrystal compound semiconductor of GaAs type, in the claim 1 which features that the aforementioned monocrystal baseplate is ZnSe or 2 the spin polarization high brightness electronic occurrence photo cathode of statement.
[claim5]
5. In the claim 1 which features that the aforementioned monocrystal compound semiconductor is the monocrystal compound semiconductor of InSb type, is one where the aforementioned monocrystal baseplate is chosen from midst of MgTe, CdTe, CdMnTe and CdZnTe or 2 the spin polarization high brightness electronic occurrence photo cathode of statement.
[claim6]
6. In the claim 1 which features that the aforementioned monocrystal compound semiconductor is the monocrystal compound semiconductor of InN type, is one where the aforementioned monocrystal baseplate is chosen from midst of the monocrystal diamond and the cubic boron nitride or 2 the spin polarization high brightness electronic occurrence photo cathode of statement.
[claim7]
7. In the claim 1 which features that the aforementioned monocrystal compound semiconductor is the monocrystal compound semiconductor of GaN type, is one where the aforementioned monocrystal baseplate is chosen from midst of ZnO and the six directions crystal boron nitride or 2 the spin polarization high brightness electronic occurrence photo cathode of statement.
[claim8]
8. The aforementioned monocrystal compound semiconductor is the monocrystal compound semiconductor of CdS type, in the claim 1 which features that the aforementioned monocrystal baseplate is GaN or 2 the spin polarization high brightness electronic occurrence photo cathode of statement.
[claim9]
9. Either of the claim 1-8 which features that the aforementioned monocrystal compound semiconductor is the thickness of 50nm-500nm in 1 sections the spin polarization high brightness electronic occurrence photo cathode of statement.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION
  • 発明者(英語)
  • KIN SHUKO
  • TAKEDA YOSHIKAZU
  • YAMAMOTO MASAHIRO
  • KAMIYA YUKIHIDE
国際特許分類(IPC)
指定国 (WO2017179440)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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