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TERAHERTZ WAVE DETECTION DEVICE AND ARRAY SENSOR NEW

外国特許コード F170009290
整理番号 (S2016-0425-N0)
掲載日 2017年11月14日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2017JP016947
国際公開番号 WO 2017188438
国際出願日 平成29年4月28日(2017.4.28)
国際公開日 平成29年11月2日(2017.11.2)
優先権データ
  • 特願2016-091298 (2016.4.28) JP
発明の名称 (英語) TERAHERTZ WAVE DETECTION DEVICE AND ARRAY SENSOR NEW
発明の概要(英語) This terahertz wave detection device (10) is provided with the following: a low-dimensional electron system material (12) formed on a substrate (11); and a first electrode (13) and second electrode (14) disposed opposite one another on a two-dimensional plane of the low-dimensional electron system material (12), the first electrode (13) and the second electrode (14) being composed of metals having different thermal conductivities. An eight-element array sensor (20) is an array formed by arranging an alignment of eight terahertz wave detection devices (10). Alternatively, this terahertz wave detection device (10) is provided with a carbon nanotube film (12), and a first electrode (13) disposed on one side in the carbon nanotube film (12) and a second electrode (14) disposed on the other side therein, the first electrode (13) and the second electrode (14) having different thermal conductivities or the same thermal conductivity.
特許請求の範囲(英語) [claim1]
1. It is low the dimensional was formed to the baseplate electronic type material and,
The description above the 1st electrode which low it is opposed is arranged with respect to 2 dimensional plane surfaces of the dimensional electronic type material and the 2nd electrode and, having,
The aforementioned 1st electrode and the aforementioned 2nd electrode consist of the metal which possesses the coefficient of thermal conductivity which differs
The terahertz wave detection device of the statement which features thing.
[claim2]
2. In the claim 1 which features that difference of coefficient of thermal conductivity of the aforementioned 1st electrode and coefficient of thermal conductivity of the aforementioned 2nd electrode is above specified value the terahertz wave detection device of statement.
[claim3]
3. The description above is low the dimensional electronic type material
In 2 dimensional direction of the aforementioned 2 dimensional plane surface at high accuracy orientation in the claim 1 which features that it is the carbon nano- tube which is done the terahertz wave detection device of statement.
[claim4]
4. The aforementioned carbon nano- tube is monolayer
In the claim 3 which features thing the terahertz wave detection device of statement.
[claim5]
5. The description above is low the dimensional electronic type material
It is gurahuen of monolayer or plural layers
In the claim 1 which features thing the terahertz wave detection device of statement.
[claim6]
6. Claim either 1 or 5 the terahertz wave detection device of statement being the array sensor which plural it lines up arranges in 1 sections,
The array sensor which detects the carrier which the description above irradiated the THz wave to the surface of the dimensional electronic type material low, particular THz was excited low in the dimensional electron.
[claim7]
7. Difference of coefficient of thermal conductivity of the aforementioned 1st electrode and coefficient of thermal conductivity of the aforementioned 2nd electrode the description above low is the value which can acquire the detection signal the occasion where the terahertz wave was irradiated to the dimensional electronic type material
In the claim 1 which features thing the terahertz wave detection device of statement.
[claim8]
8. Membrane of carbon nano- tube and,
The 1st electrode which is arranged on the one hand on the side in the membrane of the aforementioned carbon nano- tube and the 2nd electrode which is arranged on the other hand on side having,
The aforementioned 1st electrode and the aforementioned 2nd electrode, it has possessed coefficient of thermal conductivity or the same coefficient of thermal conductivity which differs
The terahertz wave detection device of the statement which features thing.
[claim9]
9. NEP with the aforementioned 1st electrode and the aforementioned 2nd electrode is below 700pW/.sqrt.Hz
From the claim 1 which features thing claim 5 or claim 7 or either of claim 8 in 1 sections the terahertz wave detection device of statement.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOKYO INSTITUTE OF TECHNOLOGY
  • 発明者(英語)
  • KAWANO YUKIO
  • SUZUKI DAICHI
国際特許分類(IPC)
指定国 (WO2017188438)
National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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