PROBLEM TO BE SOLVED: To provide a new magnetic fixing memory writing method and a magnetic fixing memory.
SOLUTION: A lattice shaped substrate layer consisting of ferro-electric material having an electro-strictive effect is formed on a substrate. Then, a magnetic thin film consisting of magnetic material having a magneto-strictive effect is formed on the crossing part of the lattice shaped substrate layer. By applying a voltage to the prescribed row and column of the lattice shaped substrate layer, a large distortion is caused on the part that the prescribed row and column are intersected. Then, by transmitting the distortion to the magnetic thin film formed on such a part, the magnetization of the magnetic thin film is reversed by a magnetic elastic effect provided in the magnetic thin film, and the write-in is performed.