PROBLEM TO BE SOLVED: To solve the problem of a transparent oxide p-n homo-junction diode being unable to be formed, since a transparent oxide for obtaining p-and n-type semiconductor characteristics in the same crystal does not exist although n-or p-type transparent oxide semiconductor is known so far, and to form a superior junction without distortions in lattice by preventing the mismatching between crystal lattices from existing in principle.
SOLUTION: This transparent oxide p-n homo-junction diode should use a transparent oxide thin film, that can be subjected to p-n conductive control. A delafosite-type CuInO2 can be used as the transparent oxide. One portion of an In site is subjected to element substitution by a Ca ion, thus manufacturing p-type CuInO2. Also, one portion of the In site is subjected to element substitution by an Sn ion, thus manufacturing n-type CuInO2.