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人工光物性に基づく新しい光子制御デバイス

研究報告コード R000000226
掲載日 2002年9月30日
研究者
  • 中野 義昭
研究者所属機関
  • 東京大学大学院工学系研究科
研究機関
  • 東京大学
報告名称 人工光物性に基づく新しい光子制御デバイス
報告概要 ダイナミック光メモリ,光ロジック,デジタル波長変換器,光3R中継器などの全光子制御デジタルデバイス/回路を実現し,デジタルフォトニクスの基礎を築くことで光情報通信技術の発展に資することを目指している。有機金属気相エピタキシにおけるInGaAsP混晶半導体成長のモデル化とシミュレーション,ポテンシャル制御量子井戸構造による電界吸収型光変調器の偏光無依存・負チャープ化,強磁性体/半導体複合多層膜構造による磁気光学効果の増大,新たな非縮退四光波混合デバイスの提案と原理検証実験,結合光共振器構造によるサブpJ全光スイッチング動作検証,半導体レーザを利用したデジタル波形整形器の研究などを行って成果を上げた。
研究分野
  • 光変調器
  • 光伝送素子
  • 測光と光検出器一般
  • 半導体の結晶成長
  • 光通信方式・機器
関連発表論文 (1)Pubulications
1) Drew N. Maywar, Govind P. Agrawal, and Yoshiaki Nakano, "Robust optical control of an optical-amplifier-based flip-flop", OSA Optics Express, vol.6, no.3, pp.75-80, January 31, 2000.
2)Byongjin Ma, Masumi Saitoh, and Yoshiaki Nakano, "Analysis and fabrication of an all-optical wavelength converter based on directionally-coupled semiconductor optical amplifiers", IEICE Transactions on Electronics, vol. E83-C, no.2, pp.248254, February 2000.
3)Olivier Feron, Masakazu Sugiyama, Weerachai Asawamethapant, Naoki Futakuchi, Y. Feurprier, Yoshiaki Nakano, and Yukihiro Shimogaki, "MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor", Applied Surface Science, voL 159-160, Issue 1-4, pp. 318-327, June 2000.
4)Ahsan M. Nazmul, Hiroinasa Shimizu and Masaaki Tanaka, "Magneto-optical spectra of epitaxial ferromagnetic MnAs films grown on Si and GaAs substrates", Journal of Applied Physics 87, pp.
5)Masaki Kato and Yoshiaki Nakano, "60nm wavelength range polarization-insensitive 1.55μm electroabsorption modulator using tensile-strained pre-biased multiple quantum well", IEICE Transactions on Electronics, vol. E83-C, no.6, pp 927-936, June 2000.
6)Drew N. Maywar, Yoshiaki Nakano, and Govind P. Agrawal, "1.31-to-1.55μm wavelength conversion by optically pumping a distributed feedback amplifier", IEEE Photonics Technology Letters, vol. 12, no. 7, pp. 858-860, July 2000.
7)Masaaki Tanaka (Invited paper), "Ferromagnetic semiconductor heterostructures based on (GaMn)As", Journal of Vacuum Science and Technology A18, pp.1247-1253 (2000).
8)H. Shimizu, M. Miyainura, and M. Tanaka, "Enhanced Magneto-Optical Effect in a GaAs:MnAs Nanoacale Hybrid Structure Combined with GaAs/AlAs Distributed Bragg Reflectors", J. Vac. Sci. & Technol. B18, pp.2063-2065 (2000).
9)S. Yamashita and D. Mataumoto, "Waveform reshaping based on injection locking of a distributed-feedback semiconductor laser," to be published in IEEE Photonics Technology Letters, Oct. 2000.
10) B. Grandidier, J.P Nys, C. Delerue, D. Stievenard, Y. Higo, and M. Tanaka "Atomic-Scale Study of GaMnAs/GaAs Layers" Appl Phys. Lett., October 30,2000, in press.
11) Olivier Feron, Yoshiaki Nakano, and Yukihiro Shimogaki, "Kinetic study of P and As desorption from binary and ternary III/V semiconductor surface by in-situ ellipsometry", submitted to Journal of Crystal Growth.
12) Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki, "Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE", submitted to Journal of Crystal Growth.
13) Peter P. Vasil'ev, Masahiro Tsuchiya,, "Femtosecond optical pulse generation by a monolithic mode locked semiconductor laser with a nonlinear mirror", submitted to Applied Physics Letters.
14) Koji Igarashi, "Soliton Pulse Compression from 5 pate 20 fs by a 15.1m-long Step-like Despersion Profirled Fiber with Dispersion-Flattened Fibers Employed", submitted to Photonics Technology Letters.
15) Masahiro Tsuchiya, "Experimental Investigation on Carrier Dynamics in SCH-MQW Waveguide Saturable Absorber of Passively Mode-locked Monolithic Laser Diode", submitted to Optical and Quantum Electronics.
16) Masahiro Tsuchiya, "Sub-100 fs SDPF option compressor for diode laser pulses", submitted to Optical and Quantum Electronics.
17) M. Tanaka, M. Miyamura, and H. Shimizu (Invited paper), "Enhancement of magneto-optical effect in a GaAs:MnAs hybrid structure sandwiched by GaAs/AlAs distributed Bragg reflectors", to be published in J. Crystal Growth.
18) M. Tanaka and Y. Mishima, "Low Temperature Molecular Beam Epitaxy Growth and Properties of (Ga,Er)As", to be published in J. Crystal Growth.
19) A. M. Nazmul, A. G. Banshchikov, H. Shimizu, and M. Tanaka, "MBE growth process of ferromagnetic MnAs on Si(III) substrates", to be published in J. Crystal Growth.
20) H. Shinaizu, M. Miyamura, and M. Tanaka "Magneto-optical Properties of a GaAs:MnAs Hybrid Structure Sandwiched by GaAs/AlAs Distributed Bragg Reflectors: Enhanced Magneto-optical Effect and Theoretical Analysis for Optical Isolator Application" submitted to Appl Phys. Lett.
(2)Paerentations
1)Drew N. Maywar, Govind P. Agrawal, and Yoshiaki Nakano, "Semiconductor optical memory based on DFB Amplifier (DFB SOA に基づく半導体光メモリ)”,電子情報通信学会技術研究報告(フォトニックネットワークをベースとする次世代インターネット研究会),PNI99-19,pp.83-87,1999年11月25日.
2)馬炳眞,斎藤真澄,中野義昭,"方向性結合半導体光アンプ型長変換器の動特性解析(Analysis of dynamic characteristics of wavelength converter based on directionally coupled semiconductor optical amplifiers)",電子情報通信学会技術研究報告(光エレクトロニクス研究会),OPE99-90,pp.1-6,1999年11月25-26日.
研究制度
  • 戦略的基礎研究推進事業、研究領域「電子・光子等の機能制御」研究代表者 中野 義昭(東京大学工学系研究科)/科学技術振興事業団
研究報告資料
  • 中野 義昭. 人工光物性に基づく新しい光子制御デバイス. 戦略的基礎研究推進事業 平成11年度 研究年報.科学技術振興事業団, 2000. p.660 - 664.

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