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MATERIAL FOR CELL GROWTH, TISSUE REGENERATING MEMBRANE AND TISSUE REGENERATION METHOD

Foreign code F150008136
Posted date 2015年2月13日
Country 世界知的所有権機関(WIPO)
International application number 2013JP083008
International publication number WO 2014103688
Date of international filing 平成25年12月9日(2013.12.9)
Date of international publication 平成26年7月3日(2014.7.3)
Priority data
  • 特願2012-283944 (2012.12.27) JP
Title MATERIAL FOR CELL GROWTH, TISSUE REGENERATING MEMBRANE AND TISSUE REGENERATION METHOD
Abstract [Problem] To provide a material for cell growth, said material being flexible and assuring a high cell growth rate. [Solution] A scaffold material for cell growth, characterized in that the surface of a scaffold base material, which is formed of polyvinylidene chloride, has been plasma-treated by exposing to a plasmatized inert gas (for example, argon gas) atmosphere. The plasmatization can be conducted by using a magnetron sputtering device. In this case, it is preferred to employ as a target electrode a material which generates no sputtering particles in ion sputtering, for example, titanium or stainless.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • AICHI GAKUIN
  • Inventor
  • KAWAI TATSUSHI
  • NOGUCHI TOSHIHIDE
  • HAYASHI TATSUHIDE
  • KOBAYASHI SHUICHIRO
  • ASAKURA MASAKI
  • HAMAJIMA SOUICHIRO
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN TD TG
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