TOP > 外国特許検索 > COPPER NANOPARTICLES AND PRODUCTION METHOD FOR SAME, COPPER NANOPARTICLE FLUID DISPERSION, COPPER NANOINK, COPPER NANOPARTICLE PRESERVATION METHOD, AND COPPER NANOPARTICLE SINTERING METHOD

COPPER NANOPARTICLES AND PRODUCTION METHOD FOR SAME, COPPER NANOPARTICLE FLUID DISPERSION, COPPER NANOINK, COPPER NANOPARTICLE PRESERVATION METHOD, AND COPPER NANOPARTICLE SINTERING METHOD

Foreign code F150008553
File No. (S2014-0572-N0)
Posted date 2015年11月26日
Country 世界知的所有権機関(WIPO)
International application number 2015JP053833
International publication number WO 2015129466
Date of international filing 平成27年2月12日(2015.2.12)
Date of international publication 平成27年9月3日(2015.9.3)
Priority data
  • 特願2014-037204 (2014.2.27) JP
Title COPPER NANOPARTICLES AND PRODUCTION METHOD FOR SAME, COPPER NANOPARTICLE FLUID DISPERSION, COPPER NANOINK, COPPER NANOPARTICLE PRESERVATION METHOD, AND COPPER NANOPARTICLE SINTERING METHOD
Abstract A principal purpose of the present invention is to provide copper nanoparticles with which oxidation of the copper is minimized; which, due to an average particle diameter of 10 nm or smaller, have a markedly lowered melting point, and moreover are highly dispersible and sinterable at low temperature; with which a protective layer can be eliminated during low-temperature sintering at 150°C or below; and which are suitable for use as a conductive copper nanoink material; as well as a copper nanoparticle preservation method by which copper nanoparticles can be stably preserved for extended periods at room temperature, and transported. The present invention provides copper nanoparticles formed of a center portion comprising a copper single crystal and a protective layer on the perimeter thereof, wherein the copper nanoparticles are characterized in that (1) the average particle diameter of the copper nanoparticles is 10 nm or less, (2) the protective layer includes at least one compound selected from C3-6 primary alcohols, C3-6 secondary alcohols, and derivatives thereof, and (3) the boiling point or thermal decomposition point of the protective layer is 150°C or lower.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • A SCHOOL CORPORATION KANSAI UNIVERSITY
  • Inventor
  • KAWASAKI HIDEYA
  • ARAKAWA RYUICHI
  • HOKITA YUKI
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN TD TG

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