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Thermal emission source and two-dimensional photonic crystal for use in the same emission source

Foreign code F170009047
File No. J1017-15WO
Posted date 2017年4月26日
Country アメリカ合衆国
Application number 201515120254
Gazette No. 20170077675
Gazette No. 9972970
Date of filing 平成27年2月24日(2015.2.24)
Gazette Date 平成29年3月16日(2017.3.16)
Gazette Date 平成30年5月15日(2018.5.15)
International application number JP2015055161
International publication number WO2015129668
Date of international filing 平成27年2月24日(2015.2.24)
Date of international publication 平成27年9月3日(2015.9.3)
Priority data
  • 特願2014-039298 (2014.2.28) JP
  • 2015WO-JP55161 (2015.2.24) WO
Title Thermal emission source and two-dimensional photonic crystal for use in the same emission source
Abstract (US9972970)
A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element.
A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.
Scope of claims [claim1]
1. A thermal emission source comprising: a) a two-dimensional photonic crystal including a slab, the slab including: an n-layer made of an n-type semiconductor,
a quantum well structure layer having a quantum well structure, and
a p-layer made of a p-type semiconductor, the n-layer, the quantum well structure layer, and the p-layer being stacked in a mentioned order in a thickness direction,
wherein modified refractive index areas whose refractive index differs from refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between subbands in a quantum well in the quantum well structure layer;
b) electrodes configured to apply, to the slab, a voltage which is negative on a side of the p-layer and positive on a side of the n-layer; and
c) at least one base provided on the n-layer, the base configured to transfer heat from an external heat source to the two-dimensional photonic crystal.
[claim2]
2. The thermal emission source according to claim 1, wherein the quantum well structure layer has an n-type quantum well, and an i-layer made of an insulating material is provided between the quantum well structure layer and the p-layer.
[claim3]
3. The thermal emission source according to claim 1, wherein the quantum well structure layer has a p-type quantum well, and an i-layer made of an insulating material is provided between the quantum well structure layer and the n-layer.
[claim4]
4. The thermal emission source according to claim 1, wherein the two-dimensional photonic crystal has an electric resistance R and a capacitance C with which 1/(2pi RC) becomes equal to or higher than a desired frequency.
[claim5]
5. The thermal emission source according to claim 1, wherein, among the p-layer and the n-layer, the layer having a larger effective mass of a carrier has a higher level of carrier density than the layer having a smaller effective mass of the carrier.
[claim6]
6. The thermal emission source according to claim 1, wherein the electrodes are: a metallic p-electrode which is in contact with the p-layer and forms an ohmic junction with the p-type semiconductor constituting the p-layer; and
a metallic n-electrode which is in contact with the n-layer and forms an ohmic junction with the n-type semiconductor constituting the n-layer.
[claim7]
7. The thermal emission source according to claim 1, wherein the electrodes are provided on at least one of surfaces of the slab in such a manner that the electrodes surround an arrangement region where the modified refractive index areas are cyclically arranged.
[claim8]
8. A two-dimensional photonic crystal for use in a thermal emission source, the two-dimensional photonic crystal comprising: a slab including an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor, which are each stacked in a mentioned order in a thickness direction; and
modified refractive index areas whose refractive index differs from refractive indices of the n-layer, the p-layer and the quantum well structure layer, the modified refractive index areas cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between subbands in a quantum well in the quantum well structure layer,
wherein the two dimensional photonic crystal has an electric resistance R and a capacitance C with which 1/(2pi RC) becomes equal to or higher than a desired frequency.
[claim9]
9. A thermal emission source comprising: a) a two-dimensional photonic crystal including a slab, the slab including: an n-layer made of an n-type semiconductor,
a quantum well structure layer having a quantum well structure, and
a p-layer made of a p-type semiconductor, the n-layer, the quantum well structure layer, and the p-layer being stacked in a mentioned order in a thickness direction,
wherein modified refractive index areas whose refractive index differs from refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between subbands in a quantum well in the quantum well structure layer;
b) electrodes configured to apply, to the slab, a voltage which is negative on a side of the p-layer and positive on a side of the n-layer; and
c) a thermal transfer portion configured to transfer heat from an outside of the thermal emission source to the two-dimensional photonic crystal.
[claim10]
10. A thermal emission source comprising: a) a two-dimensional photonic crystal including a slab, the slab including: an n-layer made of an n-type semiconductor,
a quantum well structure layer having a quantum well structure, and
a p-layer made of a p-type semiconductor, the n-layer, the quantum well structure layer, and the p-layer being stacked in a mentioned order in a thickness direction,
wherein modified refractive index areas whose refractive index differs from refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between subbands in a quantum well in the quantum well structure layer;
b) electrodes configured to apply, to the slab, a voltage which is negative on a side of the p-layer and positive on a side of the n-layer;
c) a heating device configured to heat the two-dimensional photonic crystal by electric power; and
d) a thermal transfer portion configured to transfer heat from the heating device to the two-dimensional photonic crystal.
  • Inventor, and Inventor/Applicant
  • NODA SUSUMU
  • INOUE TAKUYA
  • ASANO TAKASHI
  • DE ZOYSA MENAKA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
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