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METHOD OF BORATE-BASED CRYSTAL GROWING AND LASER GENERATOR 実績あり

Foreign code F110004883
File No. Y0353WO
Posted date 2011年7月22日
Country ロシア連邦
Application number 2005128271
Gazette No. 2005128271
Gazette No. 2338817
Date of filing 平成16年2月13日(2004.2.13)
Gazette Date 平成18年8月27日(2006.8.27)
Gazette Date 平成20年11月20日(2008.11.20)
Priority data
  • 特願2003-035778 (2003.2.13) JP
  • 特願2003-109294 (2003.4.14) JP
Title METHOD OF BORATE-BASED CRYSTAL GROWING AND LASER GENERATOR 実績あり
Abstract

FIELD: physics. ^ SUBSTANCE: invention refers to borate-based material production technology for crystal growing from caesium borate or caesium-lithium borate which can be used as optical devices for wavelength transformation, in particular, laser generator. Method of crystal growing from caesium borate or caesium-lithium borate includes water dissolution of water-soluble caesium compound and water-soluble boron compound to produce aqueous solution, water evaporation from aqueous solution with or without baking to produce material for crystal growing, and melting of produced material to grow crystals from caesium borate. To grow crystals from caesium-lithium borate water-soluble caesium, lithium and boron compounds are used as initial components of raw material for growing. ^ EFFECT: invention allows for crystals grown from borate with excellent uniformity and reliability, with small consumptions and for the short period of time

besides, use of this crystal as optical device for wavelength transformation makes it possible to produce very reliable laser generator (laser oscillator). ^ 13 cl, 4 ex, 21 dwg

  • Applicant
  • DZHAPAN SAJNS EHND TEKNOLODZHI EHDZHENSI
  • Inventor
  • SASAKI TAKATOMO,
  • MORI JUSUKE,
  • ESHIMURA MASASHI,
  • NISHIOKA MUNEJUKI,
  • FUKUMOTO SATORU,
  • MATSUI TOMOE,
  • SADZI TAKASHI
IPC(International Patent Classification)
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