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Silicon bulk thermoelectric conversion material

Foreign code F210010504
File No. AF51-01WO
Posted date 2021年7月30日
Country 中華人民共和国
Application number 201880081665
Gazette No. 111527613
Date of filing 平成30年12月26日(2018.12.26)
Gazette Date 令和2年8月11日(2020.8.11)
International application number JP2018047940
International publication number WO2019131795
Date of international filing 平成30年12月26日(2018.12.26)
Date of international publication 令和元年7月4日(2019.7.4)
Priority data
  • 特願2017-249463 (2017.12.26) JP
  • 2018JP47940 (2018.12.26) WO
Title Silicon bulk thermoelectric conversion material
Abstract Provided is a silicon bulk thermoelectric conversion material for which thermoelectric performance is improved over the prior art by reducing the thermal conductivity of silicon. In the silicon bulk thermoelectric conversion material, the ZT exceeds 0.2 at room temperature with silicon alone. The silicon bulk thermoelectric conversion material has a plurality of silicon grains measuring 1-300 nm,first voids measuring 1-30 nm on average that are present in the plurality of silicon grains and on the surfaces of the silicon grains, and second voids measuring 100-300 nm on average that are present between the plurality of silicon grains. The silicon grains have an aspect ratio of less than 10.
Outline of related art and contending technology BACKGROUND ART
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2016-504756
Patent document 2: japanese patent laid-open publication No. 2015-053466
Non-patent document
Non-patent document 1: holchbaum et al, 10.1.2008, Enhancedthermalelectricomponenowinese, 451, 163-167.
Scope of claims [claim1]
1. A silicon bulk thermoelectric conversion material that is a silicon monomer and has a ZT exceeding 0.2 at room temperature.

[claim2]
2. A silicon bulk thermoelectric conversion material comprising:
a plurality of silicon particles having an average of 1nm to 300 nm;
first pores having an average of 1nm or more and 30nm or less, the first pores being present in the plurality of silicon particles and on the surfaces of the silicon particles; and
second pores of 100nm or more and 300nm or less on average, the second pores being present between the plurality of silicon particles,
the aspect ratio of the silicon particles is less than 10.

[claim3]
3. The silicon bulk thermoelectric conversion material according to claim 2,
contains silver particles having an average of 1nm to 30 nm.

[claim4]
4. The silicon bulk thermoelectric conversion material according to claim 1,
the ratio of ZT of the in-plane direction and the out-of-plane direction of the silicon monomer is within 2 times.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIOMI JUNICHIRO
  • KASHIWAGI MAKOTO
  • KODAMA TAKASHI
IPC(International Patent Classification)
Reference ( R and D project ) CREST Scientific Innovation for Energy Harvesting Technology AREA
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