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SiC SEMICONDUCTOR ELEMENT

Foreign code F120006971
File No. S2010-0968-C0
Posted date 2012年10月29日
Country 世界知的所有権機関(WIPO)
International application number 2011JP004578
International publication number WO 2012/026089
Date of international filing 平成23年8月12日(2011.8.12)
Date of international publication 平成24年3月1日(2012.3.1)
Priority data
  • 特願2010-191438 (2010.8.27) JP
Title SiC SEMICONDUCTOR ELEMENT
Abstract

The invention provides an SiC semiconductor element having fewer interface defects at the interface between the SiC and the insulating film of the SiC semiconductor, as well as improved channel mobility. The semiconductor element is provided with at least an SiC semiconductor substrate and an insulating film in contact with the substrate, wherein the insulating film is formed on a specific crystal plane of the SiC semiconductor substrate, the specific crystal plane being a plane having an off-angle of 10-20 DEG relative to the {11-20} plane toward the [000-1] direction or at an off-angle of 70-80 DEG relative to the (000-1) plane toward the <11-20> direction. Through the use of a specific crystal plane unknown in the prior art, interface defects between the SiC semiconductor substrate and the insulating film can be reduced, and channel mobility of the semiconductor element can be improved. Devices formed with a trench (30) having various crystal planes in the side walls were fabricated, and drain current and channel mobility were measured.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OFSCIENCE AND TECHNOLOGY,
  • YANO, HIROSHI,
  • UEOKA, YOSHIHIRO
  • Inventor
  • YANO, HIROSHI,
  • UEOKA, YOSHIHIRO
IPC(International Patent Classification)
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