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THIN NANODIAMOND FILM HAVING n-TYPE CONDUCTIVITY AND PROCESS FOR PRODUCING THE SAME

Foreign code F080001980
File No. QP060006-PC
Posted date 2008年11月27日
Country 世界知的所有権機関(WIPO)
International application number 2007JP055855
International publication number WO 2008/035468
Date of international filing 平成19年3月22日(2007.3.22)
Date of international publication 平成20年3月27日(2008.3.27)
Priority data
  • 特願2006-253377 (2006.9.19) JP
Title THIN NANODIAMOND FILM HAVING n-TYPE CONDUCTIVITY AND PROCESS FOR PRODUCING THE SAME
Abstract A thin nanodiamond film having a higher electron mobility and a higher electron concentration than in conventional ones. A thin nanodiamond film which has n-type conductivity and comprises a nanodiamond/amorphous carbon composite film doped with impurity atoms is produced by the microwave plasma-assisted CVD method. The volume proportion of the nanodiamond particles in the thin nanodiamond film is regulated so as to be higher than the volume proportion of the amorphous carbon and impurity atoms.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • Kyushu University, National University Corporation
  • Inventor
  • Teii, Kungen
  • Ikeda, Tomohiro
  • Takeguchi, Koji
IPC(International Patent Classification)
Specified countries AE AG AL AM AT AU AZ BA BB BE BF BG BH BJ BR BW BY BZ CA CF CG CH CI CM CN CO CR CU CY CZ DE DK DM DZ EC EE EG ES FI FR GA GB GD GE GH GM GN GQ GR GT GW HN HR HU ID IE IL IN IS IT JP KE KG KM KN KP KR KZ LA LC LK LR LS LT LU LV LY MA MC MD MG MK ML MN MR MT MW MX MY MZ NA NE NG NI NL NO NZ OM PG PH PL PT RO RS RU SC SD SE SG SI SK SL SM SN SV SY SZ TD TG TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
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