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Lateral growth method for defect reduction of semipolar nitride films 実績あり

Foreign code F110003770
File No. E06717US1
Posted date 2011年7月4日
Country アメリカ合衆国
Application number 48622406
Gazette No. 20070015345
Gazette No. 08148244
Date of filing 平成18年7月13日(2006.7.13)
Gazette Date 平成19年1月18日(2007.1.18)
Gazette Date 平成24年4月3日(2012.4.3)
Title Lateral growth method for defect reduction of semipolar nitride films 実績あり
Abstract A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.
  • Inventor, and Inventor/Applicant
  • Baker, Troy J.; Santa Barbara CA [US]
  • Haskell, Benjamin A.; Santa Barbara CA [US]
  • Speck, James S.; Goleta CA [US]
  • Nakamura, Shuji; Santa Barbara CA [US]
  • The Regents of the University of California, Oakland CA [US]
  • Japan Science and Technology Agency, [JP]
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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