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Magnetic semiconductor material

Foreign code F110003719
File No. BE06003WO
Posted date 2011年7月4日
Country 欧州特許庁(EPO)
Application number 06729394
Gazette No. 1868215
Gazette No. 1868215
Date of filing 平成18年3月17日(2006.3.17)
Gazette Date 平成19年12月19日(2007.12.19)
Gazette Date 平成27年7月29日(2015.7.29)
International application number JP2006305405
International publication number WO2006098432
Date of international filing 平成18年3月17日(2006.3.17)
Date of international publication 平成18年9月21日(2006.9.21)
Priority data
  • 2006JP305405 (2006.3.17) WO
  • 特願2005-080572 (2005.3.18) JP
  • 特願2005-378897 (2005.12.28) JP
Title Magnetic semiconductor material
Abstract A magnetic semiconductor material contains at least one type of transition metals (Mn 2+ , Fe 3+ , Ru 3+ , Re 2+ , and Os3 + ) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier.
A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb).
A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.
Scope of claims [claim1]
1. A magnetic semiconductor device comprising: a pn homojunction structure formed by joining a thin film of a p-type conductive magnetic semiconductor material and a thin film of an n-type conductive magnetic semiconductor material characterized in that the n-type material is represented by LnMnO 1-xPn 1-y (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb, and wherein 0 < x < 0.1 and 0 < y < 0.1), the LnMnO 1-xPn 1-y yielding n-type conduction by making at least one chemical equivalent ratio of an oxygen ion (O **2-) and a Pn ion (Pn **3-) less than a stoichiometric composition of LnMnOPn, and a p-type material is represented by LnMnO 1+xPn 1+y (0 < x < 0.1 and 0 < y < 0.1) yielding p-type conduction by making at least one chemical equivalent ratio of an oxygen ion (O **2-) and a Pn ion (Pn **3-) more than a stoichiometric composition of LnMnOPn.
[claim2]
2. A magnetic semiconductor device comprising: a pn homojunction structure formed by joining a thin film of a p-type conductive magnetic semiconductor material and a thin film of an n-type conductive magnetic semiconductor material characterized in that the p-type material is represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb), wherein the p-type conduction is yielded by doping a Ln **3+ ion site with a divalent metal ion (Mg **2+, Ca **2+, Sr **2+, or Ba **2+) and the n-type material is represented by LnMnOPn, wherein the n-type conduction is yielded by doping the Ln **3+ ion site with a tetravalent metal ion (Ti **4+, Zr **4+, Hf **4+, Si **4+, Ge **4+, Sn **4+, or Pb **4+).
[claim3]
3. The magnetic semiconductor device according to claim 1 or 2, wherein the device is one of device selected from a device for detecting an external magnetic field, a device for detecting electrical current, and a memory device having functions of reading, writing, and retaining information.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • HIRAMATSU HIDENORI
  • KAMIYA TOSHIO
  • YANAGI HIROSHI
  • MOTOMITSU EIJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO/SORST Exploring and developing applications for active functions utilizing nanostructure embedded in transparent oxides AREA
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