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Nanogap electrode, method for producing same and nanodevice having nanogap electrode

Foreign code F210010505
File No. J1035-01WO
Posted date 2021年7月30日
Country 中華人民共和国
Application number 201980025414
Gazette No. 111989775
Date of filing 平成31年2月28日(2019.2.28)
Gazette Date 令和2年11月24日(2020.11.24)
International application number JP2019007937
International publication number WO2019168123
Date of international filing 平成31年2月28日(2019.2.28)
Date of international publication 令和元年9月6日(2019.9.6)
Priority data
  • 特願2018-038092 (2018.3.2) JP
  • 2019JP07937 (2019.2.28) WO
Title Nanogap electrode, method for producing same and nanodevice having nanogap electrode
Abstract A nanogap electrode comprises a first electrode which has a first electrode layer and a first metal particle that is arranged on one end of the first electrode layer; and a second electrode which hasa second electrode layer and a second metal particle that is arranged on one end of the second electrode layer. The first metal particle and the second metal particle are arranged so as to face each other at a distance; the maximum width from one end to the other end of the first metal particle and the second metal particle is 10 nm or less; and the distance between the first metal particle and the second metal particle is 10 nm or less.
Outline of related art and contending technology BACKGROUND ART
Documents of the prior art
Non-patent document
Non-patent document 1: victor M.Serdio, Shuhei Takeshita, Yasuo Azuma, Toshiharu Teranishi, Yutaka Majima, "Self-terminated Nanogap Electrodes by Electrolysis Gold Plating", 61 st society for applied Physics spring school lecture, 17p-F11-10, (2014)
Non-patent document 2: damanouyou, Dongkang man, Zhendaofeng, preparation of 'narrow electrode width nanometer gap electrode', 62 nd society of applied physics, spring academic seminar 14p-A20-6, (2015 years)
Non-patent document 3: the minister, Dongkang man, Zhendaokang man, Zhendao Feng, the initial electrode film thickness dependency of the electroless gold plating nanometer gap electrode, the 63 rd application Physics spring academic conference lecture manuscript, 21 a-S323-8 (2016)
Non-patent document 4: pipit Uky Vivitasari1, Yasuo Azuma, Masanori Sakamoto, Toshiharu Teranishi, Yutaka major, "Molecular Single-Electron transfer Device Sn-porous protective Gold devices", 63 rd applied Physician spring society lecture Association lecture manuscript set, 21 a-S323-9, (2016)
Non-patent document 5: chun Ouyang, Yousoo Kim, Kohei Hashimoto, Hayato Tsuji, Eiichi Nakamura, Yutaka Majima, "Coulomb Staircase on Rigid Carbon-bridged Oligo (phenylenevinyene) beta electric Au planar nanoElectodes", 63 rd applied Physics spring society lecture manuscript, 21 a-S323-11, (2016)
Non-patent document 6: yoonyoung Choi, Yasuo Azuma, Yutaka Majima, "Single-Electron variants made Pt-based Narrow Line Width Nanogap Electrodes", 77 th applied Physics Association autumn academic lecture set, 13a-C42-2 (2016)
Non-patent document 7: dongkang man, Botanyoyou, Banben Athens, Templezhi, Zhendafeng, nanometer gap electrode shape dependency of gate capacitance in nanometer particle single electron transistor, 77 th application Physics autumn academic conference lecture manuscript collection, 13a-C42-3 (2016)
Non-patent document 8: yoon Young Choi, Yasuo Azuma, Yutaka Majima, "Single-Electron Transistor based on Platinum Nanogap Electrodes", KJF International Conference on Organic Materials for Electronics and Photonics, PS-004, (2016)
Non-patent document 9: yoon Young Choi, Yasuo Azuma, Yutaka Majima, "Robust Pt-based Nanogap Electrodes for Single-Electron Transistors", 64 th spring academic conference presentation collection of applied Physics, 14p-E206-7, (2017)
Non-patent document 10: ain KWon, Yoon Young Choi, Yasuo Azuma, Yutaka Majima, "Au electroprocess-planar Nanogap Electrodes on Pt Surface", the 64 th society of applied physics, spring academic lecture collection, 14p-E206-8, (2017)
Non-patent document 11: the minister, the young wisdom of Yangcun, Dongkang men, Zeng rooted man, Zhendafeng, electrolytic gold-plated nanometer gap electrode on 'platinum', the 64 th academic conference presentation manuscript of spring institute of applied physics, 15P-P5-3, (2017 years)
Non-patent document 12: ju Yoma, Chun Ouyang, Qianbaiping, Tji warrior, Zhongcunrongyi, Zhendafeng, carbon bridged Low polyphenylene vinylene single-molecule wire transistor, No. 64 spring academic lecture manuscript set of applied physics society, 14a-E206-2
Non-patent document 13: pushan leveling, Seung Joo Lee, Jintian ZhiTuo, Gaoyao, Xingu Liang, Yezaki Jingzi, Zhendafeng, electric conduction of quinoid fused ring oligosaccharide monomolecular Degas, lecture manuscript set of 64 th spring academic conference of applied physics society, 14a-E206-3 (2017 years)
Non-patent document 14: pipit Uky Vivitasari, Yoon Young Choi, Ain KWon, Yasuo Azuma, Masanio Sakamoto, Toshiharu Teranishi, Yutaka Majima, "Gate catalysis of chemical Assembly Single-Electron Transistor Using 2nm Au Nanoparticle", No. 78 autumn academic conference presentation by the applied Physics, draft collection, 7a-PB1-4, (2017)
Non-patent document 15: victor M.Serdio V., Yasuo Azuma, Shuhei Takeshita, Taro Muraki, Toshiharu Teranishi, Yutaka Majima. "Robust nanoparticles by self-terminating cells gold plating", Nanoscale, (2012), 4, p.7161
Scope of claims [claim1]
1. A nanogap electrode, comprising:
a first electrode including a first electrode layer and first metal particles, the first metal particles being disposed on one end portion of the first electrode layer; and
a second electrode including a second electrode layer and second metal particles arranged on one end portion of the second electrode layer,
wherein the first metal particles and the second metal particles have a gap therebetween and are disposed so as to face each other,
a width from one end to the other end of the first metal particle and a width from one end to the other end of the second metal particle are 20nm or less,
the length of the gap between the first metal particle and the second metal particle is 10nm or less.

[claim2]
2. The nanogap electrode according to claim 1,
the surface of the first electrode includes a plurality of other metal particles in addition to the first metal particles, and the surface of the second electrode includes a plurality of other metal particles in addition to the second metal particles,
The first metal particles and the plurality of other metal particles are separated from each other on the surface of the first electrode without being in contact with each other, and the second metal particles and the plurality of other metal particles are separated from each other on the surface of the second electrode without being in contact with each other.

[claim3]
3. The nanogap electrode according to claim 1 or 2,
the first metal particles and the second metal particles are hemispherical.

[claim4]
4. The nanogap electrode according to claim 1 or 2,
the surface self-diffusion coefficient of the first metal for forming the first electrode layer and the second electrode layer is smaller than the surface self-diffusion coefficient of the second metal for forming the first metal particles and the second metal particles.

[claim5]
5. The nanogap electrode according to claim 4,
the surface self-diffusion coefficient of the second metal on the surface where there is metal bonding between the first metal and the second metal is smaller than the surface self-diffusion coefficient of the second metal.

[claim6]
6. The nanogap electrode according to claim 4,
the first metal and the second metal are alloy-forming combinations.

[claim7]
7. The nanogap electrode according to claim 6,
the first metal particles and the second metal particles are solid solutions of the first metal and the second metal.

[claim8]
8. The nanogap electrode according to claim 4,
the first metal is platinum and the second metal is gold.

[claim9]
9. The nanogap electrode according to claim 4,
the first electrode layer and the second electrode layer include a titanium layer provided on an insulating surface and a platinum layer provided on the titanium layer.

[claim10]
10. The nanogap electrode according to claim 1,
a width of the one end portion of the first electrode layer and a width of the one end portion of the second electrode layer are 20nm or less.

[claim11]
11. The nanogap electrode according to claim 1,
the film thickness of one end portion of the first electrode layer and the film thickness of one end portion of the second electrode layer are 20nm or less.

[claim12]
12. A method of fabricating a nanogap electrode, the method comprising:
forming a first electrode layer and a second electrode layer on a substrate having an insulating surface, the first electrode layer and the second electrode layer each having one end formed to face each other with a gap therebetween; and
Immersing the substrate on which the first electrode layer and the second electrode layer are formed in an electroless plating solution in which a reducing agent is mixed in an electrolytic solution containing metal ions, to form metal particles on at least a leading end portion of the first electrode layer and at least a leading end portion of the second electrode layer, respectively,
and metal-bonding the metal forming the first electrode layer and the second electrode layer to the metal contained in the electroless plating solution, and growing the metal particles to have a width from one end to the other end of 10nm or less, wherein the length of a gap between the metal particles formed at the tip of the first electrode layer and the metal particles formed at the tip of the second electrode layer is 10nm or less.

[claim13]
13. The method of manufacturing a nanogap electrode according to claim 12,
a plurality of metal particles are discretely formed on a surface of the first electrode layer and a surface of the second electrode layer.

[claim14]
14. The method of manufacturing a nanogap electrode according to claim 12 or 13,
the metal particles are formed in a hemispherical shape.

[claim15]
15. The method of manufacturing a nanogap electrode according to claim 12 or 13,
The first electrode layer and the second electrode layer are made of platinum, and electroless plating is performed with an electroless plating solution containing gold ions.

[claim16]
16. The method of manufacturing a nanogap electrode according to claim 15,
the metal particles are formed as a solid solution of platinum and gold.

[claim17]
17. The method of manufacturing a nanogap electrode according to claim 12,
the width of one end portion of the first electrode layer and the width of one end portion of the second electrode layer are formed to be 20nm or less.

[claim18]
18. The method of manufacturing a nanogap electrode according to claim 12,
the film thickness of one end portion of the first electrode layer and the film thickness of one end portion of the second electrode layer are formed to be 20nm or less.

[claim19]
19. The method of manufacturing a nanogap electrode according to claim 12,
the surface of the first electrode layer and the surface of the second electrode layer are treated with an acid before the substrate on which the first electrode layer and the second electrode layer are formed is immersed in the electroless plating solution.

[claim20]
20. A nanodevice, comprising:
A first electrode including a first electrode layer and first metal particles, the first metal particles being disposed on one end portion of the first electrode layer;
a second electrode including a second electrode layer and second metal particles, the second metal particles being disposed on one end portion of the second electrode layer; and
a metal nanoparticle or a functional molecule, wherein the metal nanoparticle or the functional molecule,
the first electrode and the second electrode are arranged so that the first metal particles and the second metal particles face each other with a gap therebetween,
the metal nanoparticles or the functional molecules are disposed in a gap between the first metal particle and the second metal particle,
widths of the first metal particles and the second metal particles from one end to the other end are not more than 10nm,
the length of the gap between the first metal particle and the second metal particle is 10nm or less.

[claim21]
21. The nanodevice of claim 20,
the nano-device includes an insulating layer disposed over the first electrode and over the second electrode and embedded with the metal nanoparticles or the functional molecules.

[claim22]
22. The nanodevice of claim 21,
the nanodevice includes a third electrode covered with the insulating layer, the third electrode being adjacent to a gap portion between the first metal particle and the second metal particle and being arranged to be insulated from the first metal particle and the second metal particle.

[claim23]
23. The nanodevice of claim 22,
the nanodevice includes a fourth electrode covered with the insulating layer, the fourth electrode being adjacent to a gap portion between the first metal particle and the second metal particle and insulated from the first metal particle and the second metal particle, the fourth electrode being disposed opposite to the third electrode.

[claim24]
24. The nanodevice of claim 23,
the nanodevice includes a fifth electrode overlapping the metal nanoparticles or the functional molecules on the insulating layer.

[claim25]
25. The nanodevice of claim 20,
the nanodevices are configured with halogen ions instead of metal nanoparticles or functional molecules.

[claim26]
26. The nanodevice of claim 23,
One of the third electrode and the fourth electrode serves as a floating gate electrode for controlling a charge state of the metal nanoparticles or functional molecules.

[claim27]
27. An integrated circuit, characterized in that a semiconductor substrate of the integrated circuit is provided with a nanodevice according to any one of claims 20 to 26, and an electronic device.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • MAJIMA YUTAKA
  • CHOI YOONYOUNG
  • KWON AIN
IPC(International Patent Classification)
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