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THERMOELECTRIC CONVERSION ELEMENT

Foreign code F200010026
File No. AF39-06WO
Posted date Jan 30, 2020
Country WIPO
International application number 2019JP017850
International publication number WO 2019208753
Date of international filing Apr 26, 2019
Date of international publication Oct 31, 2019
Priority data
  • P2018-086168 (Apr 27, 2018) JP
Title THERMOELECTRIC CONVERSION ELEMENT
Abstract Provided is an easy-to-process thermoelectric conversion element the shape of which can be freely changed. The element has electrodes and an ionic solid wherein the ionic solid comprises an anionic heterometal complex and a cationic species. The anionic heterometal complex comprises a metal M1 selected from groups 8, 9, and 10 of the Periodic Table or Cr, or Mn; a metal M2 selected from group 11 or group 12 of the Periodic Table; and a ligand. The anionic heterometal complex forms a crystal lattice by aggregation, and the cationic species is present in the interstices of the crystal lattice.
Outline of related art and contending technology BACKGROUND ART
The all-solid-state Peltier element as the thermoelectric conversion materials has been widely used. Peltier element, the metal electrode and the semiconductor are alternately, so that the n-is usually laminated member, and a direct current flows between the one of the metal electrode and the semiconductor to be absorbed, heat generation occurs in the element on the opposite side. The volume of the device is small and has the advantage that the size of the apparatus easily, noise, vibration or the like does not occur, the industry, the computer CPU cooling, a small cold box onto the vehicle or the like, the cooling device or the like for medical use.
However, the electrode of the Peltier element, a metal material and a good conductor of electricity and thus, when used as the part is required to cover the insulator. Further, an electron carrier and heat, to create a sufficient temperature gradient is necessary to apply a large amount of current (Patent Document 1). In the first place, the operating principle of the Peltier device, one type of metal 2 different in energy level by the flow of electrons is generated in the temperature difference. Therefore, the insulating element itself does not require a large current and the Peltier element of the design is extremely difficult and, indeed, such a device is not known. Further, the structure of the Peltier element, it is difficult to freely work.
The Peltier element in a manner analogous to a mechanical element or a heat source outside of the system not assumed as a method to create a temperature gradient, a solution is known (Dufour) deyufo effect. Deyufo effect is, when there is a concentration gradient in the system, a high concentration of heat generation in the effect. However, the effect is mediated deyufo and a solution, this technique can be applied to the application of the Peltier element is difficult.
Scope of claims (In Japanese)[請求項1]
 周期表第8族、9族、10族又はCr、又はMnから選択される1種の金属M1と周期表第11族又は第12族から選択される1種の金属M2と配位子からなるアニオン性異種金属錯体が、集積して結晶格子を形成し、結晶格子の隙間にカチオン種が存在するイオン性固体と電極とを有する素子。

[請求項2]
 周期表第8族、9族又は10族の金属M1がFe、Ru、Os、Ru、Rh、Co、Pd、Os、Ir及びPtから選ばれる1種である請求項1記載の素子。

[請求項3]
 金属M2がZn、Cd、Hg、Au、Ag又はCuである請求項1又は2記載の素子。

[請求項4]
 前記イオン性固体が、一般式(1)
 (X) l〔(M1) 4(M2) 4(Am) 12(E) m〕・nH 2O・・・・・(1)
(式中、M1はFe、Ru、Os、Rh、Pd、Co、Ir、Pt、Cr又はMnを示し;
 M2はZn、Cd、Hg、Au、Ag又はCuを示し;
 Xはカチオンを示し;
 Amはアミノ酸を示し;
 EはO 2-、S 2-、Se 2-、Te 2-、F -、Cl -、Br -、I -又はH -を示し;
 lはXのイオン価との積が4~14になる数を示し;
 mは0又は1の数を示し;
 nは1~100の数を示す。)
で表されるイオン性固体である請求項1~3のいずれか1項記載の素子。

[請求項5]
 前記一般式(1)中のアニオン性異種金属錯体が一般式(2)
 〔(M1) 4(M2) 4(Am) 12(E) m〕l -・・・・・(2)
(式中、M1はFe、Ru、Os、Rh、Pd、Ir、Pt、Cr又はMnを示し;
 M2はZn、Cd、Hg、Ag又はCuを示し;
 Amはアミノ酸を示し;
 EはO 2-、S 2-、Se 2-、Te 2-、F -、Cl -、Br、I -又はH -を示し;
 lは式(1)中のXのイオン価との積が4~14になる数を示し;
 mは0又は1の数を示す。)
で表される錯体である請求項4記載の素子。

[請求項6]
 Amが、チオール基を有するアミノ酸である請求項4又は5記載の素子。

[請求項7]
 Xが、第1族又は第2族に属する金属のカチオンである請求項4~6のいずれかに記載の素子。

[請求項8]
 M1が、Rh又はCoを示し、M2がAg又はZnを示す請求項4~7のいずれかに記載の素子。

[請求項9]
 Amが、システイン、ペニシラミン及びホモシステインから選ばれるアミノ酸である請求項4~8のいずれかに記載の素子。

[請求項10]
 電熱素子である請求項1~9のいずれかに記載の素子。

[請求項11]
 前記素子が、前記素子に電位差を印加することにより、前記イオン性固体中に流動性イオンの濃度勾配が発生し、前記イオン性固体中に温度分布が発生するものである請求項1~10のいずれかに記載の素子。

[請求項12]
 前記素子が、前記素子に熱量変化を加えることにより、前記イオン性固体中に流動性イオンの濃度勾配が発生し、前記イオン性固体中に電位差が発生するものである請求項1~10のいずれかに記載の素子。

[請求項13]
 請求項1~10のいずれかに記載の素子に電流を通じ、前記素子のイオン性固体中に濃度勾配を発生させ、前記素子のイオン性固体に熱を発生させる方法。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • KONNO, Takumi
  • YAMASHITA, Satoshi
  • NAKAZAWA, Yasuhiro
  • YOSHINARI, Nobuto
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
Reference ( R and D project ) CREST Establishment of molecular technology towards the Creation of New Functions AREA
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