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HIGH-PURITY CHALCOGENIDE MATERIAL AND METHOD FOR PRODUCING SAME

外国特許コード F200010046
整理番号 6230
掲載日 2020年5月14日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2019JP027172
国際公開番号 WO 2020013191
国際出願日 令和元年7月9日(2019.7.9)
国際公開日 令和2年1月16日(2020.1.16)
優先権データ
  • 特願2018-130688 (2018.7.10) JP
発明の名称 (英語) HIGH-PURITY CHALCOGENIDE MATERIAL AND METHOD FOR PRODUCING SAME
発明の概要(英語) The present invention enables the provision of a high-purity chalcogenide material, which was difficult before. The high-purity chalcogenide material contains, as a high-purity chalcogenide compound containing an element belonging to Group 14 and an element belonging to Group 16 on the periodic table at a ratio of about 1:1, a chalcogenide compound represented by general formula (1): M1M2x [wherein M1 represents an element belonging to Group 14 on the periodic table; M2 represents an element belonging to Group 16 on the periodic table; and x represents a numerical value of 0.9 to 1.1], wherein the content of the chalcogenide compound is 90 mol% or more as measured by an X-ray diffraction measurement.
従来技術、競合技術の概要(英語) BACKGROUND ART
Inexpensive p-type semiconductor composed of a secure element in the SnS tin sulfide, and have a bandgap of about 1.3eV, light absorption coefficient in the visible light region is approximately 105cm-1, a highly efficient solar cell material and the electronic device and it is expected that as the two-dimensional material, in the case where the solar cell material is used as the theoretical conversion efficiency is assumed to be 30% or more. SnS solar cell is, at present, 4.36% is the highest conversion efficiency have been reported. In addition, other periodic table Group 14 and Group 16 of the first chalcogenide compound of 1:1 in the same manner, a highly efficient solar cell is expected as a material.
Or in basic research of such a device, the single-phase crystal is important to use, single-phase crystal cannot be easily obtained. For example, a commercially available SnS crystals is taken as an example, high purity grade (purity 99.9%) of the SnS, the purity of the x other than 0.1% Sn and the impurity concentration of S is not merely, Sn or S of the impurities is not taken into consideration. Is in the sample of this commercially available SnS, SnS as well as, a mixture of impurities such as Sn2S3 or SnO2 from each other, the purity is 99.9%, SnS, Sn2S3, 99.9% comprises a total of SnO2 or the like means that, of the purity of the net is only approximately SnS 50%. In addition, the direct production of a single phase crystalline SnS attempt, as shown in Fig. 1 the double-state S-Sn as can be understood from FIG., a single-phase stable region is extremely narrow SnS, SnS directly to the single-phase crystal is difficult to manufacture the most difficult. In addition, in this case, Sn-S2 from a potential chemical system, to control the vapor pressure of sulfur significantly lower (more specifically, pressure pS2 10-8 .8<) is necessary to significantly lower the chemical potential, also from this viewpoint may not be easily produced. In addition, be used as a material used as a raw material in the case of pure sulfur, pure sulfur vapor pressure is extremely high, the reaction vessel during the heat treatment also may rupture. Problem is as described above, as well as SnS, other periodic table Group 14 Group 16 of the first chalcogenide compound may be about 1:1 the same.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KYOTO UNIVERSITY
  • 発明者(英語)
  • NOSE, Yoshitaro
  • TAKEMURA, Tomoki
  • KATSUBE, Ryoji
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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