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HIGH-PURITY CHALCOGENIDE MATERIAL AND METHOD FOR PRODUCING SAME

Foreign code F200010046
File No. 6230
Posted date May 14, 2020
Country WIPO
International application number 2019JP027172
International publication number WO 2020013191
Date of international filing Jul 9, 2019
Date of international publication Jan 16, 2020
Priority data
  • P2018-130688 (Jul 10, 2018) JP
Title HIGH-PURITY CHALCOGENIDE MATERIAL AND METHOD FOR PRODUCING SAME
Abstract The present invention enables the provision of a high-purity chalcogenide material, which was difficult before. The high-purity chalcogenide material contains, as a high-purity chalcogenide compound containing an element belonging to Group 14 and an element belonging to Group 16 on the periodic table at a ratio of about 1:1, a chalcogenide compound represented by general formula (1): M1M2x [wherein M1 represents an element belonging to Group 14 on the periodic table; M2 represents an element belonging to Group 16 on the periodic table; and x represents a numerical value of 0.9 to 1.1], wherein the content of the chalcogenide compound is 90 mol% or more as measured by an X-ray diffraction measurement.
Outline of related art and contending technology BACKGROUND ART
Inexpensive p-type semiconductor composed of a secure element in the SnS tin sulfide, and have a bandgap of about 1.3eV, light absorption coefficient in the visible light region is approximately 105cm-1, a highly efficient solar cell material and the electronic device and it is expected that as the two-dimensional material, in the case where the solar cell material is used as the theoretical conversion efficiency is assumed to be 30% or more. SnS solar cell is, at present, 4.36% is the highest conversion efficiency have been reported. In addition, other periodic table Group 14 and Group 16 of the first chalcogenide compound of 1:1 in the same manner, a highly efficient solar cell is expected as a material.
Or in basic research of such a device, the single-phase crystal is important to use, single-phase crystal cannot be easily obtained. For example, a commercially available SnS crystals is taken as an example, high purity grade (purity 99.9%) of the SnS, the purity of the x other than 0.1% Sn and the impurity concentration of S is not merely, Sn or S of the impurities is not taken into consideration. Is in the sample of this commercially available SnS, SnS as well as, a mixture of impurities such as Sn2S3 or SnO2 from each other, the purity is 99.9%, SnS, Sn2S3, 99.9% comprises a total of SnO2 or the like means that, of the purity of the net is only approximately SnS 50%. In addition, the direct production of a single phase crystalline SnS attempt, as shown in Fig. 1 the double-state S-Sn as can be understood from FIG., a single-phase stable region is extremely narrow SnS, SnS directly to the single-phase crystal is difficult to manufacture the most difficult. In addition, in this case, Sn-S2 from a potential chemical system, to control the vapor pressure of sulfur significantly lower (more specifically, pressure pS2 10-8 .8<) is necessary to significantly lower the chemical potential, also from this viewpoint may not be easily produced. In addition, be used as a material used as a raw material in the case of pure sulfur, pure sulfur vapor pressure is extremely high, the reaction vessel during the heat treatment also may rupture. Problem is as described above, as well as SnS, other periodic table Group 14 Group 16 of the first chalcogenide compound may be about 1:1 the same.
Scope of claims (In Japanese)[請求項1]
一般式(1):
M 1M 2 x   (1)
[式中、M 1は周期表第14族元素を示す。M 2は周期表第16族元素を示す。xは0.9~1.1を示す。]
で表されるカルコゲナイド化合物を含有し、
X線回折測定において、前記カルコゲナイド化合物の存在量が90モル%以上である、高純度カルコゲナイド材料。

[請求項2]
バルク状又は薄膜状である、請求項1に記載の高純度カルコゲナイド材料。

[請求項3]
請求項1又は2に記載の高純度カルコゲナイド材料の製造方法であって、
(1)周期表第14族分子と、周期表第16族分子とを含む原料を加熱し、前記一般式(1)で表されるカルコゲナイド化合物及び周期表第14族分子の二相共存材料を作製する工程、
(2)前記工程(1)で得られた二相共存材料を加熱する工程
を備える、製造方法。

[請求項4]
前記工程(2)における加熱温度が300~900℃である、請求項3に記載の製造方法。

[請求項5]
前記工程(2)において、加熱を行う際の圧力が10 -6~10Paである、請求項3又は4に記載の製造方法。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • KYOTO UNIVERSITY
  • Inventor
  • NOSE, Yoshitaro
  • TAKEMURA, Tomoki
  • KATSUBE, Ryoji
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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