TOP > 外国特許検索 > SENSOR ELEMENT, MEASURING DEVICE, METHOD FOR MANUFACTURING SENSOR ELEMENT, ELECTRONIC CIRCUIT ELEMENT, AND QUANTUM INFORMATION ELEMENT

SENSOR ELEMENT, MEASURING DEVICE, METHOD FOR MANUFACTURING SENSOR ELEMENT, ELECTRONIC CIRCUIT ELEMENT, AND QUANTUM INFORMATION ELEMENT NEW

外国特許コード F200010059
整理番号 6090
掲載日 2020年5月15日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2019JP007808
国際公開番号 WO 2019168097
国際出願日 平成31年2月28日(2019.2.28)
国際公開日 令和元年9月6日(2019.9.6)
優先権データ
  • 特願2018-037624 (2018.3.2) JP
発明の名称 (英語) SENSOR ELEMENT, MEASURING DEVICE, METHOD FOR MANUFACTURING SENSOR ELEMENT, ELECTRONIC CIRCUIT ELEMENT, AND QUANTUM INFORMATION ELEMENT NEW
発明の概要(英語) The present invention provides a sensor element including a diamond in which carbon vacancy centers in a diamond crystal structure stabilize in a negative charge state. By arranging that the diamond of the sensor element is a diamond which is n-type phosphorous-doped and contains nitrogen vacancy centers in the crystal structure, the probability of carbon vacancy centers in the diamond lattice adopting a neutral state decreases, and the nitrogen vacancy centers stabilize in a negative charge state.
従来技術、競合技術の概要(英語) BACKGROUND ART
In the crystal structure of diamond, a nitrogen-vacancy defect is referred to as the center of the composite is included. In a nitrogen-vacancy center, the position of the crystal lattice of carbon atoms containing a nitrogen atom and replaced with a form, the nitrogen atom is located at a position adjacent (omission of a carbon atom) and a pair of vacancies, also referred to as a NV center (Nitrogen Vacancy center).
The NV center, electrons are trapped in the pores in the state (a negative charge state, the following 'NV -' is referred to) is, in a state where no electrons are trapped (the neutral state, or 'NV0' is referred to) as compared to, the longitudinal direction of the external magnetic field aligned with the magnetization tilted in the horizontal direction of electron spin after, the individual spin precession due to the deviation of the particular orientation of the transverse magnetization as a whole reaches a long time until disappearance. Long transverse relaxation time of the NV - i.e. (decoherence time, hereinafter referred to as' T2 ' is referred to) in the. In addition, at room temperature (about 300K) NV - even under the long value T2.
NV- Electron spin state can be changed in response to the external magnetic field, the electron spin state can be at room temperature for measurement, including the center of the magnetic field sensor element NV as the material of the diamond can be used.
NV - electron spin state can be further by a method such as microwave irradiation, is operated from the outside (the specific place of electron spin states) can be. This operation is also possible at room temperature for, together with the long T2, the center of the quantum state of the NV write, stable reading can be used as quantum bits can be expected. NV containing the center of the diamond is thus of an electronic circuit element or a quantum information device can be used as a material.
NV containing the center of the diamond will be, published online 6 April 2009 by www.nature.com, Nature Materials volume 8, pages 383-387 (2009), Gopalakrishnan Balasubramanian, mizuochi 'Ultralong spin coherence time in isotopically engineered diamond' norikazu et al. in the in also been described. Or less, this article is' Reference 1' is called.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KYOTO UNIVERSITY
  • 発明者(英語)
  • MIZUOCHI Norikazu
  • KATO Hiromitsu
  • MAKINO Toshiharu
  • YAMAZAKI SATOSHI
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
ライセンスをご希望の方、特許の内容に興味を持たれた方は、下記までご連絡ください。

PAGE TOP

close
close
close
close
close
close