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SENSOR ELEMENT, MEASURING DEVICE, METHOD FOR MANUFACTURING SENSOR ELEMENT, ELECTRONIC CIRCUIT ELEMENT, AND QUANTUM INFORMATION ELEMENT

Foreign code F200010059
File No. 6090
Posted date May 15, 2020
Country WIPO
International application number 2019JP007808
International publication number WO 2019168097
Date of international filing Feb 28, 2019
Date of international publication Sep 6, 2019
Priority data
  • P2018-037624 (Mar 2, 2018) JP
Title SENSOR ELEMENT, MEASURING DEVICE, METHOD FOR MANUFACTURING SENSOR ELEMENT, ELECTRONIC CIRCUIT ELEMENT, AND QUANTUM INFORMATION ELEMENT
Abstract The present invention provides a sensor element including a diamond in which carbon vacancy centers in a diamond crystal structure stabilize in a negative charge state. By arranging that the diamond of the sensor element is a diamond which is n-type phosphorous-doped and contains nitrogen vacancy centers in the crystal structure, the probability of carbon vacancy centers in the diamond lattice adopting a neutral state decreases, and the nitrogen vacancy centers stabilize in a negative charge state.
Outline of related art and contending technology BACKGROUND ART
In the crystal structure of diamond, a nitrogen-vacancy defect is referred to as the center of the composite is included. In a nitrogen-vacancy center, the position of the crystal lattice of carbon atoms containing a nitrogen atom and replaced with a form, the nitrogen atom is located at a position adjacent (omission of a carbon atom) and a pair of vacancies, also referred to as a NV center (Nitrogen Vacancy center).
The NV center, electrons are trapped in the pores in the state (a negative charge state, the following 'NV -' is referred to) is, in a state where no electrons are trapped (the neutral state, or 'NV0' is referred to) as compared to, the longitudinal direction of the external magnetic field aligned with the magnetization tilted in the horizontal direction of electron spin after, the individual spin precession due to the deviation of the particular orientation of the transverse magnetization as a whole reaches a long time until disappearance. Long transverse relaxation time of the NV - i.e. (decoherence time, hereinafter referred to as' T2 ' is referred to) in the. In addition, at room temperature (about 300K) NV - even under the long value T2.
NV- Electron spin state can be changed in response to the external magnetic field, the electron spin state can be at room temperature for measurement, including the center of the magnetic field sensor element NV as the material of the diamond can be used.
NV - electron spin state can be further by a method such as microwave irradiation, is operated from the outside (the specific place of electron spin states) can be. This operation is also possible at room temperature for, together with the long T2, the center of the quantum state of the NV write, stable reading can be used as quantum bits can be expected. NV containing the center of the diamond is thus of an electronic circuit element or a quantum information device can be used as a material.
NV containing the center of the diamond will be, published online 6 April 2009 by www.nature.com, Nature Materials volume 8, pages 383-387 (2009), Gopalakrishnan Balasubramanian, mizuochi 'Ultralong spin coherence time in isotopically engineered diamond' norikazu et al. in the in also been described. Or less, this article is' Reference 1' is called.
Scope of claims (In Japanese)[請求項1]
 n型にリンドープされており、かつ1つ以上の窒素-空孔中心を結晶構造中に含んでいるダイヤモンドを有する、センサ素子。

[請求項2]
 前記ダイヤモンドの結晶を構成する炭素原子のうち 12Cの割合が99%超であり、
 前記ダイヤモンドに含まれるリン濃度が1×10 15cm -3以上かつ1×10 18cm -3以下である、請求項1に記載のセンサ素子。

[請求項3]
 前記ダイヤモンドに含まれる前記窒素-空孔中心のデコヒーレンス時間T 2が2.1msより長く、対応のT 2 が0.5msより長いことを特徴とする、請求項1に記載のセンサ素子。

[請求項4]
 前記ダイヤモンドに含まれる前記窒素-空孔中心が、単一で交番磁場に対し3.1nTHz -1/2未満の値の感度を有し、単一で定磁場に対し20nTHz -1/2未満の値の感度を有する、請求項1に記載のセンサ素子。

[請求項5]
 動作環境温度が10 -3K以上かつ10 3K以下である、請求項1に記載のセンサ素子。

[請求項6]
 請求項1に記載のセンサ素子を有し、
 磁場、
 電場、
 温度、
 力学量、
のうち少なくとも1つを測定する測定装置。

[請求項7]
 医療機器に組み込まれた測定装置、
 車載装置に組み込まれた測定装置、
 ライフサイエンス用装置に組み込まれた測定装置、
のうち少なくとも1つであることを特徴とする、請求項6に記載の測定装置。

[請求項8]
 炭素化合物、
 リン化合物、
 窒素原子、
を含む雰囲気下において、n型にリンドープされており、かつ1つ以上の窒素-空孔中心を結晶構造中に含んでいるダイヤモンドを製造する工程を含む、センサ素子の製造方法。

[請求項9]
 前記ダイヤモンドを製造する工程において、化学気相成長法によって基板上にダイヤモンド膜を成長させる、請求項8に記載のセンサ素子の製造方法。

[請求項10]
 n型にリンドープされており、かつ1つ以上の窒素-空孔中心を結晶構造中に含んでいるダイヤモンドを有する、電子回路素子。

[請求項11]
 n型にリンドープされており、かつ1つ以上の窒素-空孔中心を結晶構造中に含んでいるダイヤモンドを有する、量子情報素子。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • KYOTO UNIVERSITY
  • Inventor
  • MIZUOCHI Norikazu
  • KATO Hiromitsu
  • MAKINO Toshiharu
  • YAMAZAKI SATOSHI
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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