Top > Search of International Patents > SOLUTION FOR DISSOLVING METAL OR METAL SALT, AND USE OF SAME

SOLUTION FOR DISSOLVING METAL OR METAL SALT, AND USE OF SAME meetings

Foreign code F200010077
File No. 5911
Posted date May 15, 2020
Country WIPO
International application number 2018JP042842
International publication number WO 2019138697
Date of international filing Nov 20, 2018
Date of international publication Jul 18, 2019
Priority data
  • P2018-004381 (Jan 15, 2018) JP
  • P2018-125097 (Jun 29, 2018) JP
Title SOLUTION FOR DISSOLVING METAL OR METAL SALT, AND USE OF SAME meetings
Abstract The purpose of the present invention is to provide: an improved novel solution for dissolving a metal or a metal salt; and a plating liquid and the like, each of which contains the solution. One embodiment of the present invention provides: a solution for dissolving a metal or a metal salt, in which a solute having a specific property and including anions (for example halide ions) at a high concentration is dissolved; or a plating liquid or the like, which contains the solution and a metal or a metal salt that is dissolved in the solution.
Outline of related art and contending technology BACKGROUND ART
Plating techniques, artistic crafts products, jewelry, art decoration such as a dishwasher, a connector, switch, the field of electronic components such as IC lead frame, such as semiconductor field, many of the processing surface used in the art.
Plating techniques used in the plating solution ('plating bath' is also referred to.) Is, the solubility of the metal plating, deposition rate, affects the quality of plating. Therefore, the plating solution is, one of the important elements in the plating technique, the use of an appropriate plating solution for plating to obtain a high quality is important.
However, a conventional plating solution, strong acid, strong alkali solution such as the dangerous obstacle, powerful drug, toxins such as cyanide, the high cost organic compound and the like, such as industrial handling difficult problem in many cases.
In addition, the conventional plating solution, the plating solution in order to obtain a sufficient solubility of the metal, the addition of the complexing agent is often performed. As a result, the effect itself of addition of the complexing agent, for example, nitrogen, carbon, sulfur or the like by mixing, and reduction of the productivity and cause deterioration in the quality of plating, the plating solution is difficult to control the problem.
Further, the conventional plating solution, plating processing is performed using the same time, the hydrogen-producing side reactions may occur. As a result, the main reaction of the plating is used to generate the electrical quantity (current efficiency) is reduced to, lowering the productivity of plating is a problem. In particular, in the case of the chromium plating or the like, the occurrence of cracking and hydrogen occlusion for a direct, the obtained plating of the plating film quality problem occurs.
Under such circumstances, the substitute in the plating solution in the plating solution in the prior art has been actively performed.
Alternative for the plating solution of, for example, toxic cyanide-free plating solution (non-patent document 1), and the like (Non-Patent Document 2) the ionic liquid have been reported.
Scope of claims (In Japanese)[請求項1]
 (a)酸化側の分解電位が+1.23V vs.SHE以上である、および(b)還元側の分解電位が0V vs.SHE以下である、の少なくとも一つの性質を有する溶質が溶解した金属または金属塩の溶解用溶液であり、前記溶質に由来するアニオンを1mol/kg以上含むことを特徴とする、溶液。

[請求項2]
 前記溶質の飽和水溶液の相対湿度が純水に対して90%以下であることを特徴とする、請求項1に記載の溶液。

[請求項3]
 前記アニオンの濃度が、2mol/kg以上、20mol/kgより低い濃度であることを特徴とする、請求項1または2に記載の溶液。

[請求項4]
 前記アニオンが、ハロゲン化物イオンであることを特徴とする、請求項1から3のいずれか1項に記載の溶液。

[請求項5]
 前記ハロゲン化物が、ハロゲン化カルシウムであることを特徴とする、請求項4に記載の溶液。

[請求項6]
 前記ハロゲン化カルシウムが、4水和物より大きく36水和物以下のハロゲン化カルシウムであることを特徴とする、請求項5に記載の溶液。

[請求項7]
 請求項1から6のいずれか1項に記載の溶液と、前記溶液に溶解した金属または金属塩とを含むことを特徴とする、めっき液。

[請求項8]
 前記金属が、難溶性の塩を形成する金属、標準水素電極電位を基準として活量1のプロトンが分解する電位(0V)もしくはそれよりも低い電位でめっきが可能な金属、および標準水素電極電位を基準として+1.2V以下の電位でめっきが可能な金属の少なくとも1つであることを特徴とする、請求項7に記載のめっき液。

[請求項9]
 前記金属が、Ag、Pb、Bi、Cu、Hg、Tl、Al、As、Ba、Be、B、Ca、Cd、Ce、Co、Cr、Cs、Eu、Fe、Ga、Gd、Ge、Hf、In、K、La、Li、Lu、Mg、Mn、Mo、Na、Nb、Nd、Ni、P、Rb、S、Sb、Sc、Se、Si、Sm、Sn、Sr、Ta、Ti、V、W、Y、Yb、Zn、Zr、Au、PtおよびPdからなる群より選択される少なくとも1つであることを特徴とする、請求項7または8に記載のめっき液。

[請求項10]
 請求項7~9のいずれか1項に記載のめっき液に、めっき処理対象物を浸漬する工程を含むことを特徴とする、めっき物の製造方法。
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • KYOTO UNIVERSITY
  • Inventor
  • KITADA ATSUSHI
  • ADACHI, Ken
  • MURASE, Kuniaki
IPC(International Patent Classification)
Specified countries National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
Please contact us by e-mail or facsimile if you have any interests on this patent. Thanks.

PAGE TOP

close
close
close
close
close
close