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SILICON CARBIDE CERAMIC NEW

外国特許コード F200010082
整理番号 5855
掲載日 2020年5月15日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2018JP018601
国際公開番号 WO 2018212139
国際出願日 平成30年5月14日(2018.5.14)
国際公開日 平成30年11月22日(2018.11.22)
優先権データ
  • 特願2017-096885 (2017.5.15) JP
発明の名称 (英語) SILICON CARBIDE CERAMIC NEW
発明の概要(英語) The purpose of the present invention is to provide a SiC ceramic which has an excellent environmentally-resistant coating. The SiC ceramic contains a metal oxide, and is characterized by containing a surface-modified layer containing a silicate, wherein the surface-modified layer is derived from a SiC-ceramic forming raw material which is a base material.
従来技術、競合技術の概要(英語) BACKGROUND ART
Silicon carbide (hereinafter also referred to as' SiC '.) A ceramic material (hereinafter 'SiC ceramic material' is also referred to.) Is, the weight, heat resistance (high temperature strength), the abrasion resistance (high hardness), chemical stability (oxidation resistance, corrosion resistance), high thermal conductivity, low thermal expansion coefficient, low-induced emission, has excellent physical properties such as low thermal decay. SiC ceramic material in the aerospace field to the engine and is used, SiC ceramic material is used to develop the aircraft aircraft material has been promoted. Nuclear field, for the purpose to reduce the risk of hydrogen explosion, and the like of the fuel rod cladding tube is applied to the SiC ceramic material has been studied.
Conventional, on the ceramic substrate, a rare earth nitrate hydrate and tetraethoxysilane used as starting material of sol-gel film formed by the, the coated film by heat treatment, a rare earth silicate film has been disclosed a technique for forming (Patent Document 1). In Patent Document 1, the ceramic substrate for forming a film on the sol-gel method is employed, the actual silicon nitride ceramic as the ceramic substrate is only disclosed. However, disclosed in Patent Document 1 sol-gel method a film formation technique, or a general film formation technique or the like by plasma spray, a sufficiently dense film cannot be formed, the coating film formed of the ceramic base plate (base material) is not high and the adhesion and, as a result, peeling of the coating, are lost to the environment has been a problem.
Then, the technique of Patent Document 1, silicon carbide ceramic substrate after being formed, the rare-earth nitrate hydrate the surface of the substrate and starting the commodity by a sol-gel method of tetraethoxysilane, water vapor from the group consisting of rare-earth silicate is formed on the corrosion film. In this technique, a release film such as water vapor corrosion in the case where the damage has occurred, again, such as a sol-gel method is applied to the damaged portion, a rare earth silicate as a raw material of the rare earth metal components supplied from the outside unless, self-healing of the film to water vapor corrosion cannot be expected.
The inventors of the present invention, so far, and the SiC phase, the phase of a material having low reactivity with respect to SiC the matrix of the multi-phase structure, is arranged in the matrix of the fiber reinforced composite material comprising SiC SiC SiC fibers (hereinafter 'SiC/SiC composite material' is also referred to.) (Patent Document 2) are developed.
The SiC/SiC composite material, and SiC of the SiC ceramic fiber composite by improving the toughness and, moreover, even under high-temperature oxidizing atmosphere to suppress oxidation by the formation of the oxide film of the silica can have an excellent durability. The SiC/SiC composite materials may be used, such as high-temperature water vapor in the environment and reacting with the silica, it is possible to maintain durability there was studied.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KYOTO UNIVERSITY
  • 発明者(英語)
  • HINOKI, Tatsuya
  • YANAGAWA, Shohei
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DJ DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JO JP KE KG KH KN KP KR KW KZ LA LC LK LR LS LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN ST TD TG
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